Results 11 to 20 of about 167,043 (312)
Investigation of SiC MOSFET channel reverse conduction [PDF]
2019 IEEE 13th International Conference on Power Electronics and Drive Systems (PEDS), 2019 In this study, forward and reverse conduction of SiC MOSFETs are characterized. These measurements allow us to demonstrate that forward and reverse output characteristics are different, while this was not taken into account in the SPICE model provided by die manufacturers.
Nguyen Quang Chuc +3 more
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A Si/SiC Heterojunction Double-Trench MOSFET with Improved Conduction Characteristics [PDF]
MicromachinesA Si/SiC heterojunction double-trench MOSFET with improved conduction characteristics is proposed. By replacing the N+ source and P-ch regions with silicon, the device forms a Si/SiC heterojunction that exhibits Schottky-like characteristics, effectively
Yi Kang +5 more
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Driver optimization of high power converter based on BIGT reverse conduction loss [PDF]
IET Power ElectronicsBi‐mode Insulated Gate Transistor (BIGT), owing to its notable attributes in power density and compact dimensions, holds promising applications in the realm of high power converters.
Lei Qi +8 more
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Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics [PDF]
NanomaterialsIn this study, a novel silicon carbide (SiC) double-trench MOSFET (DT-MOS) combined Schottky barrier diode (SBD) and MOS-channel diode (MCD) is proposed and investigated using TCAD simulations. The integrated MCD helps inactivate the parasitic body diode
Peiran Wang +10 more
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Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019 In order to determine the temperature dependence of the reverse transition voltage between thermionic emission and tunneling mechanisms, a numerical method has been applied for β-Ga2O3 Schottky barrier diodes. The main idea of this method is based on the
A. Latreche
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Reverse Wenckebach “pseudo-supernormal” conduction or paroxysmal atrioventricular block [PDF]
Journal of Cardiovascular Disease Research, 2012 Paroxysmal atrioventricular-block is a poorly-recognized cause of atrioventricular conduction abnormality leading to syncope and can be fatal. Here we report a case of paroxysmal atrioventricular-block presenting as syncope treated effectively with pacemaker implantation and review the current literature on prevalence, known mechanisms and treatment ...
Maliha Zahid, Sandeep Arora
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JSES International, 2020 Background: During reverse total shoulder arthroplasty, the functionality of the subscapularis remains unknown. The purpose of this study was to determine the integrity and function of the repaired subscapularis after reverse total shoulder arthroplasty ...
Michael Khazzam, MD +3 more
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Dynamic Ron Effect in GaN HEMT in a Zero-Voltage-Switching Circuit Due to Off-Resonance Operation
IEEE Journal of the Electron Devices Society, 2021 Dynamic ON resistance of GaN devices is a must-care point for users. In this paper, the reverse conduction of commercial GaN power transistors is studied.
Shaoyu Sun +3 more
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Thermal Characterization of SiC Modules for Variable Frequency Drives
IEEE Open Journal of Power Electronics, 2021 Silicon carbide (SiC) devices can exhibit simultaneously high electro-thermal conductivity and extremely fast switching. To perform optimal designs showing the benefits of SiC in achieving efficiency, size, weight, and cost objectives for electric ...
Marzieh Karami +3 more
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电力工程技术, 2023 The controlled-type soft-switching technology based on critical conduction mode (CRM) is an effective way to achieve zero voltage switching (ZVS) of switches.
WU Chao +3 more
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