Results 201 to 210 of about 47,754 (258)
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Reversible Conductance Switching in Molecular Devices
Advanced Materials, 2008A reliable and reproducible solid-state molecular electronic device that shows bidirectional conductance switching of molecular origin is demonstrated. The devices are manufactured by conventional processing techniques and are based on a molecular monolayer of photochromic diarylethenes, sandwiched between two electrodes, which switches reversibly and ...
Kronemeijer, Auke J. +6 more
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1982
The application of semiconductor devices in power installations is continuously growing due to the improved performance and the resulting cost reductions of such systems. This advancement is made possible by adapting the device characteristics to the circuit requirements. This is particularly the case with reverse-conducting thyristors.
P. De Bruyne, J. Vitins, R. Sittig
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The application of semiconductor devices in power installations is continuously growing due to the improved performance and the resulting cost reductions of such systems. This advancement is made possible by adapting the device characteristics to the circuit requirements. This is particularly the case with reverse-conducting thyristors.
P. De Bruyne, J. Vitins, R. Sittig
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Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's, 2004
This report is the first to present the newly developed 1200 V reverse conducting IGBT (RC-IGBT) manufactured by using our thin wafer process technology. The fabricated RC-IGBT operates as both IGBT and free wheeling diode (FWD). Adopting a helium-irradiation carrier lifetime controlling technology to our RC-IGBT, the essential characteristics of the ...
null Takahashi +3 more
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This report is the first to present the newly developed 1200 V reverse conducting IGBT (RC-IGBT) manufactured by using our thin wafer process technology. The fabricated RC-IGBT operates as both IGBT and free wheeling diode (FWD). Adopting a helium-irradiation carrier lifetime controlling technology to our RC-IGBT, the essential characteristics of the ...
null Takahashi +3 more
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Time Reversal in Heat Conduction
American Journal of Physics, 1965The mathematical consequences of assuming heat conduction (or diffusion of particles) in the same sense as the temperature (or concentration) gradient rather than in the opposite sense leads to time reversal in the partial differential equation and the possibility of computing a prior state of temperature from one known in the present.
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Reversible conductivity transformations in chalcogenide alloy films
Journal of Non-Crystalline Solids, 1970Certain amorphous chalcogenide alloys, such as Ge15Te85, exhibit metastable conductivity. These reversible structural changes in amorphous alloys entailing variation in order and conductivity have been made the basis of memory devices.(1) In this paper, we present our observations on induced conductivity transformation from one state to another ...
E. J. Evans +2 more
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A new cuff electrode for reversible conduction blocking
Journal of Neuroscience Methods, 1991A cuff electrode of novel design (rigid body and lid) is presented. It contains a closed cavity surrounding the nerve, through which a cooled liquid (Ringer solution) can be circulated. Recording sites at both ends of the cavity permit monitoring of the conduction blocking, which occurs at different temperatures for different units. Reversible blocking
M, Brunner, U T, Koch
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Progressive and Reversible Conduction Disease With Checkpoint Inhibitors
Canadian Journal of Cardiology, 2017Novel antineoplastic therapies are focused on harnessing our own immune system to fight cancer. To that end, cytotoxic T-lymphocyte-associated antigen 4 and programmed death ligand 1 are 2 coinhibitory signals that play central roles in decreasing T-cell response and represent a class of medications termed "checkpoint inhibitors." We present an unusual
Neeti, Reddy +9 more
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Development of SiC Merged Reverse Conductive Devices
IEEJ Transactions on Industry Applications, 2020AbstractSiC merged reverse conductive (MRC) power devices composed of both unipolar devices and bipolar devices have been developed to achieve a smaller chip size, a lower power loss, and a higher reliability. SiC MRC power devices such as SiC MRC‐MOSFET and SiC MRC‐IGBT can achieve this performance, but have the problems of on‐voltage degradation and ...
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Pyrogallarene-based ion-conducting pores that show reversible conductance properties
Chemical Communications, 2009Pyrogallol[4]arene macrocycles prepared from pyrogallol and n-dodecanal insert in phospholipid bilayers and form conducting pores that undergo reversible switching over a wide range of potentials.
Ruiqiong, Li +2 more
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Conduction, reverse conduction and switching characteristics of GaN E-HEMT
2015 IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems (PEDG), 2015In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode gallium nitride (GaN) transistor is described. GaN transistors are leading edge technology and as so, their characteristics are less than well documented.
Sørensen, Charlie +6 more
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