Results 71 to 80 of about 167,043 (312)
IEEE Open Journal of the Industrial Electronics Society, 2023 In this article, 650-V/7.5-A-rated enhancement-mode gallium nitride (GaN) high-electron-mobility transistors (HEMTs) with integrated gate drivers are characterized under thousands of accelerated thermal cycling (ATC) at different junction ...
Hussain Sayed +2 more
doaj +1 more source
, 2012 A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As a first approach, devices were fabricated consisting of thin (
C. Ojeda-Aristizabal +6 more
core +1 more source
Electroluminescence from single nanowires by tunnel injection: an experimental study [PDF]
, 2007 We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire.
Federico Capasso +12 more
core +2 more sources
In situ molecular organization and heterogeneity of the Legionella Dot/Icm T4SS
FEBS Letters, EarlyView.We present a nearly complete in situ model of the Legionella Dot/Icm type IV secretion system, revealing its central secretion channel and identifying new components. Using cryo‐electron tomography with AI‐based modeling, our work highlights the structure, variability, and mechanism of this complex nanomachine, advancing understanding of bacterial ...
Przemysław Dutka +11 more
wiley +1 more source
, 2011 We investigated a switchable ferroelectric diode effect and its physical mechanism in Pt/BiFeO3/SrRuO3 thin-film capacitors. Our results of electrical measurements support that, near the Pt/BiFeO3 interface of as-grown samples, a defective layer ...
C. B. Eom +10 more
core +1 more source
FEBS Letters, EarlyView.The Ile181Asn variant of human UDP‐xylose synthase (hUXS1), associated with a short‐stature genetic syndrome, has previously been reported as inactive. Our findings demonstrate that Ile181Asn‐hUXS1 retains catalytic activity similar to the wild‐type but exhibits reduced stability, a looser oligomeric state, and an increased tendency to precipitate ...
Tuo Li +2 more
wiley +1 more source
Conditions and possible mechanism of condensation of e-h pairs in bulk GaAs at room temperature
, 2003 A mechanism of the condensation of e-h pairs in bulk GaAs at room temperature, which has been observed earlier, is proposed. The point is that the photon assisted pairing happens in a system of electrons and holes that occupy energy levels at the very ...
Binder +18 more
core +1 more source
Reversible Conduction Block in Peripheral Nerve Using Electrical Waveforms [PDF]
Bioelectronics in Medicine, 2017 Electrical nerve block uses electrical waveforms to block action potential propagation.Two key features that distinguish electrical nerve block from other nonelectrical means of nerve block: block occurs instantly, typically within 1 s; and block is fully and rapidly reversible (within seconds).Approaches for achieving electrical nerve block are ...
Niloy, Bhadra +3 more
openaire +2 more sources
FEBS Letters, EarlyView.Bone metastasis in prostate cancer (PCa) patients is a clinical hurdle due to the poor understanding of the supportive bone microenvironment. Here, we identify stearoyl‐CoA desaturase (SCD) as a tumor‐promoting enzyme and potential therapeutic target in bone metastatic PCa.
Alexis Wilson +7 more
wiley +1 more source
, 2008 In this paper we investigate "Warm Electron Injection" as a mechanism for NOR programming of double-gate SONOS memories through 2D full band Monte Carlo simulations.
Furnemont A. +12 more
core +1 more source