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Current–voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers
Applied Physics Letters, 2003p-i-n rectifiers were fabricated on epitaxial layers grown on free-standing GaN substrates. The forward turn-on voltage, VF was ∼5 V at 300 K and displayed a positive temperature coefficient. The specific on-state resistance (RON) was ∼5 mΩ cm2 at 300 K, with an ideality factor of ∼2 and activation energy for low forward current density of ∼1.6 eV ...
Y. Irokawa +11 more
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Reverse recovery transient characteristic of PEDOT:PSS/n-Si hybrid organic-inorganic heterojunction
Organic Electronics, 2017Abstract We study the junction behavior of poly (3,4-ethylenedioxythiophene):polystyrenesulphonate/n-Si hybrid organic/inorganic heterojunction by reverse recovery transient (RRT) characterization. RRT response for PEDOT:PSS/n-Si hybrid junction is reported for various n-Si doping concentration and forward bias current injection level.
Ari Bimo Prakoso +5 more
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2017 75th Annual Device Research Conference (DRC), 2017
Silicon double heterojunction (DH) solar cells represent a possible future path for high-efficiency, low-cost solar power. These cells forgo doped p-n and n+-n (or p+-p) homojunctions diffused at ∼900 °C in favor of < 200 °C-deposited selective heterojunction contacts, which block one type of carrier while allowing the other to pass freely[1].
Alexander H. Berg, James C. Sturm
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Silicon double heterojunction (DH) solar cells represent a possible future path for high-efficiency, low-cost solar power. These cells forgo doped p-n and n+-n (or p+-p) homojunctions diffused at ∼900 °C in favor of < 200 °C-deposited selective heterojunction contacts, which block one type of carrier while allowing the other to pass freely[1].
Alexander H. Berg, James C. Sturm
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Improved reverse recovery characteristics of inAlN/GaN schottky barrier diode using a SOI substrate
Semiconductor Science and Technology, 2017Abstract The low-frequency noise (LFN) and reverse recovery charge characteristics of a six-inch InAlN/AlN/GaN Schottky barrier diode (SBD) on the Si-on-insulator (SOI) substrate were demonstrated and investigated for the first time. Raman spectroscopy indicated that using SOI wafers lowered epitaxial stress.
Hsien-Chin Chiu +5 more
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Materials Chemistry and Physics, 2004
Abstract Electron irradiation was performed to enhance the switching speed and thereby to reduce the energy loss of a p–n junction diode. The reverse recovery time decreased significantly but other electrical deterioration such as leakage current and on-stage voltage drop due to the electron irradiation was found not to be much.
S.M Kang +5 more
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Abstract Electron irradiation was performed to enhance the switching speed and thereby to reduce the energy loss of a p–n junction diode. The reverse recovery time decreased significantly but other electrical deterioration such as leakage current and on-stage voltage drop due to the electron irradiation was found not to be much.
S.M Kang +5 more
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Characteristics and Modeling of PN Junction Diode in Verilog-A Including Reverse Recovery
2021 IEEE 6th International Conference on Computing, Communication and Automation (ICCCA), 2021Bhattiprolu Nikhil Prabhat +1 more
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Analysis on reverse recovery characteristic of SiC MOSFET intrinsic diode
2014 IEEE Energy Conversion Congress and Exposition (ECCE), 2014Zhaohui Wang +4 more
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Optimization of the Reverse Recovery Characteristics of 500V VDMOS
2024 Photonics & Electromagnetics Research Symposium (PIERS)Lixiang Wang +2 more
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2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023
Yibing Wang +4 more
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Yibing Wang +4 more
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