Results 61 to 70 of about 16,611 (244)

Harnessing Time‐Dependent Magnetic Texture Dynamics via Spin‐Orbit Torque for Physics‐Enhanced Neuromorphic Computing

Advanced Science, EarlyView.
A neuromorphic computing platform using spin‐orbit torque‐controlled magnetic textures is reported. The device implements bio‐inspired synaptic functions and achieves high performance in both pattern recognition (>93%) and combinatorial optimization (>95%), enabling unified processing of cognitive and optimization tasks.
Yifan Zhang, Yu Li, Huai Lin, Xinying Wang, Long Liu, Guoliang Xing, Di Wang, Zhihao Zhao, Zhipeng Guo, Junbo Yang, Jiebin Niu, Yan Sun, Tom Wu, Guozhong Xing   +13 more
wiley   +1 more source

Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices

Advances in Condensed Matter Physics, 2015
HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3.
Lifeng Liu, Yi Hou, Weibing Zhang, Dedong Han, Yi Wang   +4 more
doaj   +1 more source

Sol–Gel-Processed Y₂O₃ Multilevel Resistive Random-Access Memory Cells for Neural Networks

Nanomaterials, 2023
Yttrium oxide (Y2O3) resistive random-access memory (RRAM) devices were fabricated using the sol–gel process on indium tin oxide/glass substrates. These devices exhibited conventional bipolar RRAM characteristics without requiring a high-voltage forming ...
Taehun Lee, Hae-In Kim, Yoonjin Cho, Sangwoo Lee, Won-Yong Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Sin-Hyung Lee, Jaewon Jang   +9 more
doaj   +1 more source

Highly Scalable Neuromorphic Hardware with 1-bit Stochastic nano-Synapses

, 2013
Thermodynamic-driven filament formation in redox-based resistive memory and the impact of thermal fluctuations on switching probability of emerging magnetic switches are probabilistic phenomena in nature, and thus, processes of binary switching in these ...
Kavehei, Omid, Skafidas, Efstratios
core   +1 more source

Dual Bipolar Resistive Switching in Wafer‐Scalable 2D Perovskite Oxide Nanosheets‐Based Memristor

Advanced Science, EarlyView.
A wafer‐scalable memristor based on 2D Sr2Nb3O₁₀ perovskite oxide nanosheets exhibits dual bipolar resistive switching through controllable oxygen ion migration and redox reactions. This single device enables both STDP and anti‐STDP synaptic functions, achieving 86.4% MNIST accuracy in supervised spiking neural networks, offering a compact, energy ...
Sohwi Kim, Chansoo Yoon, Haena Yim, Taeyoon Kim, Hoyoung Suh, Woohyeon Ryu, Gwangtaek Oh, Jihoon Jeon, Kwanyoung Oh, Yeonjoo Jeong, Ji‐Won Choi, Bae Ho Park   +11 more
wiley   +1 more source

Prediction of semi-metallic tetragonal Hf2O3 and Zr2O3 from first-principles

, 2012
A tetragonal phase is predicted for Hf2O3 and Zr2O3 using density functional theory. Starting from atomic and unit cell relaxations of substoichiometric monoclinic HfO2 and ZrO2, such tetragonal structures are only reached at zero temperature by ...
Blaise, Philippe, Fonseca, Leonardo R. C., Nishi, Yoshio, Xue, Kan-Hao   +3 more
core   +1 more source

Atomic‐Scale Mechanisms of Multi‐Resistance States in HfOx‐Based RRAM: Evolution of Atomic Electric Fields and Oxygen Vacancies

Advanced Science, EarlyView.
Atomic‐scale mechanisms governing multilevel resistive switching in HfOx‐based RRAM are reveal through advanced TEM. Thermally driven m‐phase rotation ([101]↔[011]) enables selective oxygen vacancy migration, which reconstructs atomic electric fields and dictates conduction—from Schottky/Poole‐Frenkel emission to Ohmic transport.
Wen Sun, Yuyan Wang, Ruofei Hu, Yuyao Lu, Jun Xu, Xinyi Li, Bin Gao, He Qian, Jianshi Tang, Huaqiang Wu   +9 more
wiley   +1 more source

In Situ Quantization with Memory‐Transistor Transfer Unit Based on Electrochemical Random‐Access Memory for Edge Applications

Advanced Science, EarlyView.
By combining ionic nonvolatile memories and transistors, this work proposes a compact synaptic unit to enable low‐precision neural network training. The design supports in situ weight quantization without extra programming and achieves accuracy comparable to ideal methods. This work obtains energy consumption advantage of 25.51× (ECRAM) and 4.84× (RRAM)
Zhen Yang, Yuxiang Yang, Baiqian Wang, Yaoyu Tao, Zelun Pan, Lei Cai, Teng Zhang, Longhao Yan, Xianbin Li, Yuchao Yang   +9 more
wiley   +1 more source

Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO_X:SiO₂ Thin Films on Resistive Random Access Memory Devices

Nanomaterials, 2023
Activation energy, bipolar resistance switching behavior, and the electrical conduction transport properties of ITOX:SiO2 thin film resistive random access memory (RRAM) devices were observed and discussed.
Kai-Huang Chen, Chien-Min Cheng, Na-Fu Wang, Ming-Cheng Kao   +3 more
doaj   +1 more source

Oxide Semiconductor Thin‐Film Transistors for Low‐Power Electronics

Advanced Science, EarlyView.
This review explores the progress of oxide semiconductor thin‐film transistors in low‐power electronics. It illustrates the inherent material advantages of oxide semiconductor, which enable it to meet the low‐power requirements. It also discusses current strategies for reducing power consumption, including interface and structure engineering.
Shuhui Ren, Qi Huang, Dingwei Li, Saisai Wang, Yitong Chen, Huihui Ren, Yan Wang, Yingjie Tang, Bowen Zhu   +8 more
wiley   +1 more source