Results 81 to 90 of about 13,298 (199)

Large‐Scale and Highly Reliable Hopfield Neural Networks Using Vertical NAND Flash Memory for the In‐Memory Associative Computing

Advanced Intelligent Systems, EarlyView.
Large‐scale Hopfield neural networks (HNNs) for associative computing are implemented using vertical NAND (VNAND) flash memory. The proposed VNAND HNN with the asynchronous update scenario achieve robust image restoration performance despite fabrication variations, while significantly reducing chip area (≈117× smaller than resistive random‐access ...
Jin Ho Chang, Jae Seung Woo, Suk‐Kang Sung, Ki‐Whan Song, Woo Young Choi   +4 more
wiley   +1 more source

Enhancing the Electrical Uniformity and Reliability of the HfO₂-Based RRAM Using High-Permittivity Ta₂O₅ Side Wall

IEEE Journal of the Electron Devices Society, 2018
In conventional HfO2-based resistive random access memory (RRAM), SiO2 is usually adopted as side wall spacer (low-k spacer) to define the device feature size. It is found that the forming voltage of the conventional HfO2 RRAM with SiO2 spacer rises when
Mei Yuan, Yi-Ting Tseng, Po-Hsun Chen, Chih-Cheng Shih, Hui-Chun Huang, Ting-Chang Chang, Xiaole Cui, Xinnan Lin, Shengdong Zhang, Hang Zhou   +9 more
doaj   +1 more source

Device‐Level Implementation of Reservoir Computing With Memristors

Advanced Intelligent Systems, EarlyView.
Reservoir computing (RC) is an emerging computing scheme that employs a reservoir and a single readout layer, which can be actualized in the nanoscale with memristors. As a comprehensive overview, the principles of RC and the switching mechanisms of memristors are discussed, followed by actual demonstrations of memristor‐based RC and the remaining ...
Sunbeom Park, Hyojung Kim, Ho Won Jang
wiley   +1 more source

Stretchable and Wearable Resistive Switching Random‐Access Memory

Advanced Intelligent Systems, 2020
In the era of big data, with the development and application of 5G technology, artificial intelligence technology, and wearable electronics, the acquisition, storage, search, sharing, analysis, and even visual presentation require huge amounts of data in
Qiuwei Shi, Jiangxin Wang, Izzat Aziz, Pooi See Lee   +3 more
doaj   +1 more source

A Flexible and Energy‐Efficient Compute‐in‐Memory Accelerator for Kolmogorov–Arnold Networks

Advanced Intelligent Systems, EarlyView.
This article presents KA‐CIM, a compute‐in‐memory accelerator for Kolmogorov–Arnold Networks (KANs). It enables flexible and efficient computation of arbitrary nonlinear functions through cross‐layer co‐optimization from algorithm to device. KA‐CIM surpasses CPU, ASIC, VMM‐CIM, and prior KAN accelerators by 1–3 orders of magnitude in energy‐delay ...
Chirag Sudarshan, Oliver Artner, Paul‐Philipp Manea, Sebastian Siegel, Susanne Hoffmann‐Eifert, Regina Dittmann, John Paul Strachan   +6 more
wiley   +1 more source

Field‐free programmable bipolar magnetic heterostructures for neuromorphic computing

InfoMat, EarlyView.
Neuromorphic computing mimics the brain's efficiency, yet typical memristors lack biological synapses' dual signal control. We introduce a magnetic memristor enabling bidirectional, multi‐state modulation without external fields, validated in image feature extraction and neural clustering.
Yaping He, Gaofei Wang, Jinfeng Zhai, Wentao Huang, Zhenyu Zhao, Zheng Zhang, Jiabin Shen, Pan He, Zengguang Cheng, Peng Zhou   +9 more
wiley   +1 more source

Intrinsic chiroptical responsivity in self‐powered organic photodiodes for polarization‐tunable optical convolution

InfoMat, EarlyView.
Self‐powered chiral organic photodiodes function as polarization‐sensitive convolutional filters for circularly polarized light‐driven optical convolutional neural networks. This conceptually innovative architecture enables dynamic weight modulation, bias‐free operation, and exceptional noise resilience, boosting feature extraction fidelity from 0.15 ...
Lixuan Liu, Weilong Huang, Feihong Zhu, Yongjie Cai, Xiaolong Li, Yang Yang, Xiao Ma, Zhixiang Wei, Wei Chen, Huipeng Chen   +9 more
wiley   +1 more source

SiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithography [PDF]

, 2014
textA highly compact, one diode-one resistor (1D-1R) SiOx-based resistive switching memory device with nano-pillar architecture has been achieved for the first time using nano-sphere lithography. The average nano-pillar height and diameter are 1.3 μm and
Ji, Li, active 21st century
core  

Chemically‐Linked Heterostructures of Palladium Nanosheets and 2H‐MoS2

Small, EarlyView.
The photoresponse of MoS2 devices is extended to the near‐infrared region (up to 1700 nm) through chemical connection to Pd nanosheets (PdNS). A maleimide is used for covalent connection to MoS2, and a phenyl bromide moiety for linkage to the PdNS. In the absence of the chemical linker, van der Waals heterostructures show poorer enhancement of the ...
Ramiro Quirós‐Ovies, Pablo Bastante, Simon Hettler, Víctor Vega‐Mayoral, Sergio Aina, Vasileios Balos, Thomas Pucher, Andrés Castellanos‐Gomez, Raul Arenal, Juan Cabanillas‐Gonzalez, Emilio M. Pérez, Jesús Santamaría, Víctor Sebastian   +12 more
wiley   +1 more source

Design and Application of Oxide-Based Resistive Switching Devices for Novel Computing Architectures

IEEE Journal of the Electron Devices Society, 2016
Resistive switching behaviors of oxide-based resistive random access memory (RRAM) and the applications for the data storage and computing systems have been widely studied.
Jinfeng Kang, Peng Huang, Bin Gao, Haitong Li, Zhe Chen, Yudi Zhao, Chen Liu, Lifeng Liu, Xiaoyan Liu   +8 more
doaj   +1 more source