Results 161 to 170 of about 61,702 (200)

Amplitude of RTS noise in MOSFETs

2009 International Conference on Microelectronics - ICM, 2009
Low frequency noise of NMOS and PMOS field effect transistors was measured in wide temperature range as a function of applied electric field intensity in longitudinal and perpendicular direction and the influence of sample geometry on 1/f noise and RTS noise was examined for various gate lengths.
Jan Pavelka, Josef Sikula, Munecazu Tacano, Masato Toita   +3 more
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RTS noise in integrated circuits

AIP Conference Proceedings, 1993
The objective of this paper is twofold. First, the model theory of the RTS noise developed by Sikulova1 is applied to an analysis of the RTS noise in bipolar Schottky IC’s. This theory makes it possible to evaluate quantities characteristic of the processes of carrier capture, emission, and recombination.
Z. Chobola, P. Vasina, J. Sikula
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RTS Noise Characterization in Flash Cells

IEEE Electron Device Letters, 2008
A method is presented for using noise spectroscopy to efficiently characterize random telegraph signal (RTS) in flash cells, in particular allowing the determination of oxide depth of the traps from the gate voltage dependence of the frequency spectrum of the trap.
Sing-Rong Li, William McMahon, Yin-Lung R. Lu, Yung-Huei Lee   +3 more
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Integrating RTS noise into circuit analysis

2009 IEEE International Symposium on Circuits and Systems, 2009
A new methodology to include Random Telegraph Signals (RTS) noise in circuit analysis is proposed. The aim of this methodology is to allow integrated circuit designers to study the sensitivity of their circuits to RTS noise and thus minimise the impact of it. In this work, compact models extracted from three-dimensional ‘atomistic’ simulations based on
Tong Boon Tang, Alan F. Murray
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GRT model of RTS noise in MOSFETs

2009 International Conference on Microelectronics - ICM, 2009
Random Telegraph Signal (RTS) noise in submicron MOSFETs showing a capture process, which deviates from the standard Shockley-Read-Hall kinetics, is analyzed using generation-recombination-tunneling model of current modulation in order to explain quadratic dependence of capture rate on current.
Josef Sikula, Jan Pavelka, Munecazu Tacano, Masato Toita   +3 more
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The Methods for RTS Noise Identification

AIP Conference Proceedings, 2009
In the paper authors present two methods, which allows to identify the RTS noise in noise signal of semiconductor devices. The first one was elaborated to identify the RTS noise and also to estimate the number of its levels. The second one can be used to estimate all of the parameters of Gaussian and non‐Gaussian components in the noise signal in a ...
Alicja Konczakowska, Barbara Stawarz-Graczyk, Massimo Macucci, Giovanni Basso   +3 more
openaire   +1 more source

IDENTIFICATION OF OPTOCOUPLER DEVICES WITH RTS NOISE

Fluctuation and Noise Letters, 2006
The results of noise measurements in low frequency range for CNY 17 type optocouplers are presented. The research were carried out on devices with different values of Current Transfer Ratio (CTR). The methods for identification of Random Telegraph Signal (RTS) in noise signal of optocouplers were proposed.
A. KONCZAKOWSKA, J. CICHOSZ, A. SZEWCZYK, B. STAWARZ   +3 more
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Non-Poisson Process in RTS-like Noise

AIP Conference Proceedings, 2007
RTS noise was measured in wide range of semiconductor devices, comprising Si MOSFETs and GaN/AlGaN and InGaAs/InAlAs heterostructures. RTS noise probability distribution was evaluated and exponential dependence of up and down times corresponding to Poisson process of charge carrier capture and emission events was confirmed in most samples except the ...
Jan Pavelka, Josef Sikula, Munecazu Tacano   +2 more
openaire   +1 more source

Noise Effects in RTD-Fluxgate

IEEE Sensors, 2005., 2006
Models and an extensive set of theoretical findings of residence times difference (RTD) fluxgate have been already presented in previous papers. A very simple sensor structure, negligible onboard power requirements and the intrinsic digital form of the readout signal are the main features of the proposed strategy.
ANDO', Bruno, BAGLIO, Salvatore, A. R. BULSARA, V. IN, V. SACCO   +4 more
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Improvement of RTS Noise in HgCdTe MWIR Detectors

Journal of Electronic Materials, 2014
Random telegraph signal (RTS) noise is present in all bands of the infrared spectrum from λ c = 2.5 μm (short-wavelength infrared) to λ c = 15.75 μm (very long-wavelength infrared) and decreases the performance of infrared photodetectors.
Brunner, Alexandre, Rubaldo, Laurent, Destefanis, V., Chabuel, F., Kerlain, A., Bauza, D., Baier, N.   +6 more
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