Results 241 to 250 of about 1,123,144 (299)
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Ion current rectification in combination with ion current saturation
Analytica Chimica Acta, 2020Over the decades, nanochannels have been widely used for single molecule detection, smart sensors, and energy transfer and storage based on its unique ion transport properties. Although various ion transport phenomena of nanochannels have been reported, the discovery of new ion transport phenomena is still of great significance for understanding ...
Guo-Chang Liu +6 more
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Solid State Communications, 1974
A calculation of the high electric fields found in domains beyond the onset of current saturation in piezoelectric semi-conductors is outlined. The calculation is a first principles one, deriving from Feynman’s exact polaron mobility formula. Special attention is given to explaining the motives behind an iteration scheme, that uses a classical like ...
P.K. Lai, P.O. Massicot, S.J. Nettel
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A calculation of the high electric fields found in domains beyond the onset of current saturation in piezoelectric semi-conductors is outlined. The calculation is a first principles one, deriving from Feynman’s exact polaron mobility formula. Special attention is given to explaining the motives behind an iteration scheme, that uses a classical like ...
P.K. Lai, P.O. Massicot, S.J. Nettel
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Journal of Applied Physics, 1975
Current saturation has been observed in AgInSe2 for pulsed electric fields greater than ∼700 V/cm. The saturation has been attributed to acoustoelectric interactions and represents the first observation of such effects in a chalcopyrite semiconductor. The saturation occurs for electron drift velocities exceeding (2−3) ×105 cm/sec.
B. Tell, H. M. Kasper
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Current saturation has been observed in AgInSe2 for pulsed electric fields greater than ∼700 V/cm. The saturation has been attributed to acoustoelectric interactions and represents the first observation of such effects in a chalcopyrite semiconductor. The saturation occurs for electron drift velocities exceeding (2−3) ×105 cm/sec.
B. Tell, H. M. Kasper
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Multistep current saturation in CdS
Il Nuovo Cimento B Series 11, 1972Current saturation has been observed in semiconducting CdS for different values of the conductivity. It is found that a small interval in the carrier condentration exists, above which a stimulated emission of phonons is the main mechanism giving rise to current saturation, and below which sound amplification is mainly due to a classical interaction ...
S. Ballarò +3 more
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Acoustoelectric Current Distribution and Current Saturation in CdS
Journal of Applied Physics, 1966The spatial distribution of electric field in photoconductive CdS is measured under the condition of current saturation. The presence of stationary high-field domains is related to the distribution of acoustoelectric current which, assuming Weinreich's relation holds, may in turn be related to the nonuniform growth and decay of acoustic energy in the ...
J. H. McFee, P. K. Tien
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Correction of Saturated Current Transformers Secondary Current Using ANNs
IEEE Transactions on Power Delivery, 2006Current transformers (CTs) provide instrument-level current signals to meters and protective relays. Protective relays' accuracy and performance are directly related to steady-state and transient performance of CTs. CT saturation could lead to protective relay maloperation or even prevent tripping.
H. Khorashadi-Zadeh, M. Sanaye-Pasand
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Current saturation in submillimeter-wave varactors
IEEE Transactions on Microwave Theory and Techniques, 1992In semiconductor devices the speed of electrons cannot exceed certain limits. This phenomenon will affect varactor multipliers as well as other high-frequency devices where the RF current through the active part of the device is primarily displacement current. Hence, at some point, 'saturation' of the varactor output power is expected.
E.L. Kolberg +3 more
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High-saturation-current, wide-bandwidth photodiodes
2004 IEEE International Topical Meeting on Microwave Photonics (IEEE Cat. No.04EX859), 2005This paper describes the design and performance of two photodetector structures, a partially depleted absorber photodiode and a charge-coupled unitraveling carrier photodiode, that have achieved very high saturation currents while maintaining wide bandwidths.
null Xiaowei Li +5 more
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IETE Journal of Research, 1967
ABSTRACTElectric field induced current saturation at room temperature is reported in low resistivity n-GaAs at fields much less than the threshold field for Gunn oscillations. In order to use the low resistivity crystal, surface-oriented devices were used, the fabrication technique of which is described.
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ABSTRACTElectric field induced current saturation at room temperature is reported in low resistivity n-GaAs at fields much less than the threshold field for Gunn oscillations. In order to use the low resistivity crystal, surface-oriented devices were used, the fabrication technique of which is described.
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Current Transformer Burden and Saturation
IEEE Transactions on Industry Applications, 1979A tutorial review of the steady-state and transient behavior of current transformers used with power system relays and meters is presented. ANSI accuracy standards are discussed and consideration is given to the significance of burden and saturation in the application of protective relays.
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