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Fast compensation of current transformer saturation
2010 IEEE PES Innovative Smart Grid Technologies Conference Europe (ISGT Europe), 2010This paper presents a novel method for current transformer (CT) saturation detection and compensation. In the method, CT saturation characteristics are represented by a partial nonlinear regression model. The parameters of this model can be estimated rapidly and accurately using both unsaturated and saturated sections of the waveform of a secondary ...
D. Y. Shi +3 more
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Acoustoelectric Current Distribution and Current Saturation in CdS
Journal of Applied Physics, 1966The spatial distribution of electric field in photoconductive CdS is measured under the condition of current saturation. The presence of stationary high-field domains is related to the distribution of acoustoelectric current which, assuming Weinreich's relation holds, may in turn be related to the nonuniform growth and decay of acoustic energy in the ...
J. H. McFee, P. K. Tien
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Multistep current saturation in CdS
Il Nuovo Cimento B Series 11, 1972Current saturation has been observed in semiconducting CdS for different values of the conductivity. It is found that a small interval in the carrier condentration exists, above which a stimulated emission of phonons is the main mechanism giving rise to current saturation, and below which sound amplification is mainly due to a classical interaction ...
S. Ballarò +3 more
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Current saturation and oscillation in CdSe
Solid-State Electronics, 1969Abstract Current saturation and oscillations are observed in low resistivity CdSe single crystals without any external illumination over the temperature range from room temperature to 77°K. These observations are explained qualitatively by a phenomenological theory which is developed on the basis of the acoustoelectric effect in piezoelectric ...
S. Yee, A. Kawai, M.L. Neudorfer
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On the drain current saturation in short channel MOSFETs
Microelectronics Journal, 2006Abstract Submicron MOSFETs are the issue for ULSI integrated circuits. However, drastic reduction of device size leads to a complex modeling of the MOSFET drain current, which is affected by the electrical and physical phenomena induced by the low device dimension.
A. Benfdila, Francis Balestra
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Contribution of acoustoelectric current to current saturation in piezoelectric semiconductors
Physics Letters, 1966Abstract A quantitative interpretation of current saturation and of high field domains in piezoelectric semiconductors is proposed. These phenomena arise from acoustoelectric current. The theory is in good agreement with experimental results for CdS. Experimental results for tellurium are discussed.
G. Quentin, J.M. Thuillier
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Saturation current in solar cells: an analysis
Solar Cells, 1980Abstract An analysis of the saturation current in solar cells is presented. Based on this analysis we conclude that the factor A which appears in the Shockley equation I o = A exp (−E g /kT) is material independent and that A has a value 2.95 × 10 5 A per unit area (1 cm2) of the cell. On the basis of the work of
N.M. Ravindra, Basudev Prasad
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IETE Journal of Research, 1967
ABSTRACTElectric field induced current saturation at room temperature is reported in low resistivity n-GaAs at fields much less than the threshold field for Gunn oscillations. In order to use the low resistivity crystal, surface-oriented devices were used, the fabrication technique of which is described.
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ABSTRACTElectric field induced current saturation at room temperature is reported in low resistivity n-GaAs at fields much less than the threshold field for Gunn oscillations. In order to use the low resistivity crystal, surface-oriented devices were used, the fabrication technique of which is described.
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On the current saturation in low dimensional MOSFETs
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716), 2004Submicron MOSFETs are the issue for ULSI integrated circuits. Several current models are proposed to explain the drain current behavior in the saturation region of the I/sub D/-V/sub D/ characteristic curve. Mainly, we can distinguish two types: the classical and low dimension current modeling.
A. Benfdila, M.T. Bensidhoum
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Saturation Current in Alloy Junctions
Proceedings of the IRE, 1955According to theory, the current which flows across a P-n junction when it is biased in the reverse direction should be nearly independent of the applied voltage. This current is called the saturation current, I8. In actual practice, the current often increases with voltage (due to leakage paths across the junction at the surface) and eventualy large ...
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