Results 211 to 220 of about 5,171 (275)

Ultrafast Self-Driven WSe₂ Photodetectors with Bottom Schottky Contacts. [PDF]

Adv Sci (Weinh)
Li J, Wang Z, Jian J, Weng Z, Wu Q, Zhou X, Lin L, Gu X, Xiao P, Nan H, Xiao S.   +10 more
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Enabling state-of-the-art sensitivity of patch-antenna-coupled TeraFETs for the >1-THz frequency band using superstrate lenses

Holstein J, But DB, Krysl A, Lisauskas A, Roskos HG.   +4 more
europepmc   +1 more source

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Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes

Journal of Nanoscience and Nanotechnology, 2021
We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot.
Seong-Ji, Min, Michael A, Schweitz, Ngoc Thi, Nguyen, Sang-Mo, Koo   +3 more
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Carbon–Silicon Schottky Barrier Diodes

Small, 2012
The simple fabrication of high-performance Schottky barrier diodes between silicon and conductive carbon films (C-Films) is reported. By optimizing the interface, ideality factors as low as n = 1.22 for pyrolytic photoresist films (PPF) have been obtained.
Chanyoung, Yim, Niall, McEvoy, Ehsan, Rezvani, Shishir, Kumar, Georg S, Duesberg   +4 more
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Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode

Japanese Journal of Applied Physics, 2018
A compact model applicable for both Schottky barrier diode (SBD) and junction barrier Schottky diode (JBS) structures is developed. The SBD model considers the current due to thermionic emission in the metal/semiconductor junction together with the resistance of the lightly doped drift layer.
Dondee Navarro, Fernando Herrera, Hiroshi Zenitani, Mitiko Miura-Mattausch, Naoto Yorino, Hans Jürgen Mattausch, Mamoru Takusagawa, Jun Kobayashi, Masafumi Hara   +8 more
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A Multifunctional Porous Organic Schottky Barrier Diode

Angewandte Chemie, 2012
Mesoporous materials: A multifunctional porous organic material (ANPPIT; see picture) has been synthesized and characterized. Multifunctionality of the compound has been determined from nitrogen adsorption, guest-dependent luminescence, and electrical conductivity measurements.
Sasanka, Dalapati, Rajat, Saha, Sankar, Jana, Astam K, Patra, Asim, Bhaumik, Sanjay, Kumar, Nikhil, Guchhait   +6 more
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Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights

Journal of Applied Physics, 1987
A technique for fabricating controlled Schottky barrier heights to GaAs over the entire band gap is demonstrated. Thin, highly doped semiconductor layers at the metal-semiconductor interface allowed the reproducible control of the effective barrier height on n-type GaAs from near zero (i.e., ohmic behavior at 300 K) to 1.33 eV (the band gap equals 1.43
S. J. Eglash, N. Newman, S. Pan, D. Mo, K. Shenai, W. E. Spicer, F. A. Ponce, D. M. Collins   +7 more
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Photocurrents in P3MeT Schottky barrier diodes

Synthetic Metals, 1999
Abstract The photocurrent action spectrum of a Schottky diode formed from electrodeposited poly(3-methylthiophene) is shown to follow closely the UV-visible absorption spectrum. At low forward bias, the peak photocurrent asymptotes to the expected square-root dependence on total potential, Vt, across the depletion region.
Jones, G. W., Taylor, D. M., Gomes, Henrique L.   +2 more
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Schottky Barrier Diodes

1998
A Schottky barrier diode consists of a rectifying metal-semiconductor contact with a N-drift region, designed to support the required reverse voltage as shown in Fig. 3.1. Forward conduction in the Schottky diode occurs by the transport of majority carriers (electrons) across the metal-semiconductor barrier Baliga, 1996.
Ranbir Singh, B. Jayant Baliga
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