Results 221 to 230 of about 5,171 (275)
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Planar Mesa Schottky Barrier Diode
IBM Journal of Research and Development, 1971Planar silicon technology has been used to fabricate mesa Schottky barrier diodesh with high breakdown voltages. This method proves to be superior to alternate methods used to increase the breakdown voltage of Schottky diodes. The processing techniques and characteristics of mesa Schottky diodes are described in this paper.
N. G. Anantha, K. G. Ashar
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Journal of Physics E: Scientific Instruments, 1972
The experiment described was performed by an undergraduate in his final term at the University. A Schottky diode prepared by the evaporation of Au on to n type GaAs was used to measure the donor density profile in the semiconductor and to demonstrate the effects of deeper levels.
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The experiment described was performed by an undergraduate in his final term at the University. A Schottky diode prepared by the evaporation of Au on to n type GaAs was used to measure the donor density profile in the semiconductor and to demonstrate the effects of deeper levels.
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Photoresponsivity of ZnO Schottky barrier diodes
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2006We report on the photoresponsivity of ZnO Schottky barrier diodes grown on (0001) GaN∕Al2O3 substrates by plasma-assisted molecular-beam epitaxy. First, ZnO Schottky barrier diodes show a reverse saturation current of ∼10−8A in the dark, and they present a large current buildup of ∼103A under ultraviolet light illumination, with maintaining stable ...
D. C. Oh +5 more
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GaAs Schottky-barrier avalanche diodes
Solid-State Electronics, 1970Abstract Efficient microwave power generation in a mesa type GaAs Schottky-barrier avalanche diode is reported. An output power of 600 mW (c.w.) at 8.2 GHz with an efficiency over 10 per cent was obtained when the diodes were mounted with the metal-semiconductor interface adjacent to the heat sink.
C.K. Kim, L.D. Armstrong
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Aging effects in GaAs Schottky barrier diodes
27th Annual Proceedings., International Reliability Physics Symposium, 1989The stability of the barrier height of Au/W/GaAs and Au/Pt/Ti/GaAs Schottky barriers under long-term biasing conditions is discussed. Both barrier types exhibit decreases in barrier height under long-term reverse bias conditions, with the changes seen for the Au/W/GaAs diodes (30-50 MeV) much greater than those for the Au/Pt/Ti/GaAs diodes (5 MeV). The
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Schottky barrier diodes on 3C-SiC
Applied Physics Letters, 1985Schottky barrier contacts have been made on n-type 3C-SiC epitaxially grown by chemical vapor deposition, and their characteristics were studied by the capacitance and photoresponse measurements. By evaporating Au onto chemically etched surfaces of 3C-SiC, good quality Schottky barrier junctions have been obtained.
S. Yoshida +4 more
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InGaAs/InP schottky barrier diode
Physica Status Solidi (a), 1989Utilisation de la theorie de la diffusion thermioinique (ITD) dans les couches minces interfaciales, pour le transport des porteurs majoritaires, a travers la diode a barriere Schottky. Methode de determination de la hauteur de la barriere a l'equilibre thermique, et de la densite d'etats, par les mesures courant-tension et capacite-tension ...
L. Hernandez, C. Pelosi
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Low storage Schottky barrier diode transistors
1968 International Electron Devices Meeting, 1968Nongold doped transistors can exhibit low storage times if they are prevented from going into heavy saturation. A Schottky barrier diode placed across the collector-base junction can be used to control transistor storage times. Such a device is referred to as a Schottky barrier diode transistor (SBDT).
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1992
Schottky barriers and pn-junctions are the simplest active solid state devices. Their rectifying characteristics as well as the ability to expand or contract their space charge layer with bias is useful in many applications. With appropriate material and doping design, a wide variety of desirable operating characteristics can be obtained.
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Schottky barriers and pn-junctions are the simplest active solid state devices. Their rectifying characteristics as well as the ability to expand or contract their space charge layer with bias is useful in many applications. With appropriate material and doping design, a wide variety of desirable operating characteristics can be obtained.
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AuSiC Schottky barrier diodes
Solid-State Electronics, 1974Abstract Results of the experimental study of Au n-type SiC Schottky barrier diodes at room temperature are presented. The diodes are fabricated by vacuum-evaporating gold on chemically etched n-type hexagonal (6H) SiC surfaces and exhibit excellent forward current vs voltage characteristics with the exponential factor n of about 1·07±0·02 for ...
S.Y. Wu, R.B. Campbell
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