Results 221 to 230 of about 778,720 (285)

High-Performance p-Cu₂O/n-β-Ga₂O₃ Heterojunction Barrier Schottky Diodes with Copper Contact. [PDF]

Nanomaterials (Basel)
Wang X, Liu X, Li M, Yu H, Ang KW, Chen CZ, Geng Y, Wang Q, Yu H.   +8 more
europepmc   +1 more source

Schottky Barrier as Photodetector Based on Nanostructured Cd _<i>x</i> Zn_1-<i>x</i> S along with Switchable Photocurrent Generation. [PDF]

ACS Omega
Das P, Saha S, Bhunia AK.
europepmc   +1 more source

Design and Optimization of AlGaN/AlN/GaN L‑SBD for Radiofrequency Applications. [PDF]

ACS Omega
Dudekula S, Jaiswal NK, Ebel T, Chowdam VP, Koo SM, Dhanaraj K.   +5 more
europepmc   +1 more source

Tunable Fermi Level Alignment in TMD Contacts via Semimetallic Bi-Sb Alloys. [PDF]

ACS Omega
Cheng CC, Chen HJH, Shen CH, Chueh YL, Chu YE, Lin YF, Chen SZ.   +6 more
europepmc   +1 more source

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Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes

Journal of Nanoscience and Nanotechnology, 2021
We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot.
Seong-Ji, Min, Michael A, Schweitz, Ngoc Thi, Nguyen, Sang-Mo, Koo   +3 more
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Carbon–Silicon Schottky Barrier Diodes

Small, 2012
The simple fabrication of high-performance Schottky barrier diodes between silicon and conductive carbon films (C-Films) is reported. By optimizing the interface, ideality factors as low as n = 1.22 for pyrolytic photoresist films (PPF) have been obtained.
Chanyoung, Yim, Niall, McEvoy, Ehsan, Rezvani, Shishir, Kumar, Georg S, Duesberg   +4 more
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Schottky Barrier Diodes

1998
A Schottky barrier diode consists of a rectifying metal-semiconductor contact with a N-drift region, designed to support the required reverse voltage as shown in Fig. 3.1. Forward conduction in the Schottky diode occurs by the transport of majority carriers (electrons) across the metal-semiconductor barrier Baliga, 1996.
Ranbir Singh, B. Jayant Baliga
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Schottky barrier diodes

Journal of Physics E: Scientific Instruments, 1972
The experiment described was performed by an undergraduate in his final term at the University. A Schottky diode prepared by the evaporation of Au on to n type GaAs was used to measure the donor density profile in the semiconductor and to demonstrate the effects of deeper levels.
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Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode

Japanese Journal of Applied Physics, 2018
Abstract A compact model applicable for both Schottky barrier diode (SBD) and junction barrier Schottky diode (JBS) structures is developed. The SBD model considers the current due to thermionic emission in the metal/semiconductor junction together with the resistance of the lightly doped drift layer. Extension of the SBD model to JBS
Dondee Navarro, Fernando Herrera, Hiroshi Zenitani, Mitiko Miura-Mattausch, Naoto Yorino, Hans Jürgen Mattausch, Mamoru Takusagawa, Jun Kobayashi, Masafumi Hara   +8 more
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A Multifunctional Porous Organic Schottky Barrier Diode

Angewandte Chemie, 2012
Mesoporous materials: A multifunctional porous organic material (ANPPIT; see picture) has been synthesized and characterized. Multifunctionality of the compound has been determined from nitrogen adsorption, guest-dependent luminescence, and electrical conductivity measurements.
Sasanka, Dalapati, Rajat, Saha, Sankar, Jana, Astam K, Patra, Asim, Bhaumik, Sanjay, Kumar, Nikhil, Guchhait   +6 more
openaire   +2 more sources