Results 141 to 150 of about 14,138 (303)

Hydrogen sensors based on AlGaN/AIN/GaN Schottky diodes

, 2008
Pt/AlGaN/AIN/GaN Schottky diodes are fabricated and characterized for hydrogen sensing. The Pt Schottky contact and the Ti/Al/Ni/Au ohmic contact are formed by evaporation. Both the forward and reverse currents of the device increase greatly when exposed
Wang, XH, Wang, JX, Wang, XH, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: wxh@mail.semi.ac.cn, Ran, JX, Wang, CM, Wang, BZ, Xiao, HL, Wang, XL, Feng, C, Yang, CB   +9 more
core  

Dual‐Stage Microneedle Patch With Lipid Droplet‐Mediated ‘Capture‐Kill’ and Sustained Release for Enhanced Wound Healing

Advanced Science, EarlyView.
We report a lipid‐droplet‐engineered, gallium‐loaded sonodynamic therapeutic platform (LDTG) incorporated into a bilayer microneedle (MN) patch co‐delivering all‐trans retinoic acid (ATRA), termed LDTG A‐MNs, for synergistic antibacterial therapy and accelerated wound repair.
Peng Jiang, Meijun Jiang, Jiapeng Lei, Wen Zhang, Huiyuan Yang, Xueyang Wang, Siyu Zhang, Qiongfang Ruan, Shuhua Liu, Wei Li   +9 more
wiley   +1 more source

An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors

, 2009
The gain mechanism in GaN Schottky barrier ultraviolet photodetectors is investigated by focused light beam. When the incident light illuminates the central region of the Schottky contact electrode, the responsivity changes very little with the increase ...
Yang H, Zhao DG, Zhu JJ, Wang H, Zhang SM, Jiang DS, Liu ZS, Zhao DG Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn   +7 more
core  

Tunable Dynamics via Dual‐Ion Modulation for Event‐based Data Processing Using a Highly Uniform and Self‐Rectifying Memristor Array

Advanced Science, EarlyView.
Tunable dynamics of an interface‐type memristor array enabled by dual‐ion modulation through Ag nanoclusters are demonstrated. A 32 × 32 one‐resistor (1R) array exhibits 100% yield with high temporal/spatial uniformity (<3%) and a rectification ratio of 105.
Yoonho Cho, Dawon Kim, Jeonghong Lee, Dae‐won Kim, See‐On Park, Jongmin Bae, Taehwan Jang, Shinhyun Choi   +7 more
wiley   +1 more source

Schottky Barrier Diodes Based on Freestanding Polycrystalline Diamond Membranes

Advanced Electronic Materials
Polycrystalline diamond (PCD) thin films have been widely used as a coating material to enhance surface properties or protect against wear and tear. However, their implementation as an electronic material has been hindered by inconsistent semiconducting ...
Dmitry Shinyavskiy, Chenyu Wang, Luke Suter, Matthias Muehle, Jung‐Hun Seo   +4 more
doaj   +1 more source

Motion sensors achieved from a conducting polymer-metal Schottky contact. [PDF]

RSC Adv, 2019
Zhou Y, Fang J, Wang H, Zhou H, Yan G, Shao H, Zhao Y, Lin T.   +7 more
europepmc   +1 more source

W‐N‐C Tandem Catalytic Centers Mediating Efficient Charge Transfer for the Enhanced Radical‐Path U(VI) Photoreduction

Advanced Science, EarlyView.
This work constructed a tandem W−N−C center to simultaneously achieve the regulation of reaction pathways and optimization of charge separation efficiency. The Lewis‐acidic W6+ sites activated O2 to generate O2−$O_2^ - $, with enhanced charge separation via electronic modulation, steering U(VI) reduction down an efficient radical pathway.
Zhiyao Wu, Jinhao Xu, Hao Fu, Yuxiang Deng, Nannan Wang, Wenhua Zhang, Peng Zhang, Zhiwei Huang, Zhenpeng Cui, Shu‐Xian Hu, Wangsuo Wu, Duoqiang Pan   +11 more
wiley   +1 more source

V2CTx MXene as a Sacrificial Promoter for NiFe Catalyst for Anion Exchange Membrane Electrolyzers

Advanced Science, EarlyView.
These findings demonstrate that V2CTx functions beyond passive conductive support as an active electronic participant whose structural legacy sustains durable performance even after vanadium leaching in Anion Exchange Membrane (AEM) Electrolysers. ABSTRACT Nickel‐iron layered double hydroxides (NiFe‐LDH) show excellent activity, their poor conductivity
Bastian Schmiedecke, Can Kaplan, Karuppasamy Dharmaraj, Axel Zuber, Merve Buldu‐Aktürk, Ningjun Chen, Mailis Lounasvuori, Xuyun Guo, Valeria Nicolosi, Thorsten Schultz, Norbert Koch, Johanna Rosen, Michelle P. Browne   +12 more
wiley   +1 more source

Origin of Schottky barriers in gold contacts on GaAs110.

Physical review letters, 2005
Gold contacts on n-type GaAs(110) have been investigated using scanning tunneling microscopy and spectroscopy in cross-sectional configuration. In spatially resolved current voltage spectroscopy the Schottky barrier potential is visible. We find signatures of delocalized gap states at the interface decaying into the semiconductor and observe a defect ...
Reusch, T. C. G., Wenderoth, Martin, Winking, L., Quaas, N., Ulbrich, Rainer G.   +4 more
openaire   +2 more sources

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

Advanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source