Results 151 to 160 of about 1,741,103 (246)

High‐Entropy Engineering and External Magnetic Field Modulation Synergistically Enhance the H2S Sensing Performance of Rare‐Earth Perovskite Ferrites

Advanced Science, EarlyView.
A novel high‐entropy perovskite oxide, (Gd0.2Tb0.2Dy0.2Ho0.2Er0.2)FeO3, was successfully synthesized for advanced hydrogen sulfide gas detection. By synergistically coupling high‐entropy‐induced local lattice distortion with weak magnetic field modulation, the tailored material generates abundant active sites. This innovative dual strategy dramatically
Yunfei Wang, Min Zhang, Rui Li, Xiaolong Yao, Zhaofeng Wu, Fengdong Qu, Shan Qiu, Zhenjiang Li   +7 more
wiley   +1 more source

Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer

, 1996
The influence of the sidegate voltage on the Schottky barrier in the ion-implanted active layer via the Schottky pad on the semi-insulating GaAs substrate was observed, and the mechanism for such an influence was proposed.
Wu J, Wu J CHINESE ACAD SCIINST SEMICONDSEMICOND MAT SCI LABPOB 912BEIJING 100083PEOPLES R CHINA., Lin LY, Zhang M, Wang ZG, Han CB, Bai SW   +6 more
core  

Suppressing Morphological and Energetic Disorder in Copper Antimony Sulfide‐based Hole‐Transporting Materials via Ligand–Precursor Engineering for Efficient and Stable Perovskite Solar Cells

Advanced Science, EarlyView.
Sulfur‐precursor and ligand engineering regulate the nucleation, morphology, and energetic disorder of CuSbS2 nanocrystals for dopant‐free inorganic hole‐transport layers in perovskite solar cells. Thiourea‐assisted synthesis combined with optimized OAm/OAc coordination suppresses excessive anisotropic growth, enabling mixed plate‐like/quasi‐spherical ...
Ibrahimhan Dilci, Savas Sonmezoglu
wiley   +1 more source

Engineering Large‐Grain Metal Halide Perovskite Films via Chemical Vapor Deposition for High‐Performance, Ultralow‐Noise Perovskite Photodetectors

Advanced Science, EarlyView.
Chemical vapor deposition produces large‐grain, phase‐pure CsPbBr3 films (grains up to 35 µm) with Drude‐like terahertz photoconductivity and twofold higher carrier mobility versus spin‐coated references. These microstructural advances translate into photodetectors with a detectivity of 8.4 × 1012 Jones, dark current below 1 pA cm−2, X‐ray sensitivity ...
Roel Vanden Brande, Sudipta Seth, Lei Gao, Bapi Pradhan, Dilkhush Khicher, Anastasiia Bazylevska, Wei Qu, Christian Sternemann, Hai Wang, Steven De Feyter, Weidong Xu, Fei Zhang, Mischa Bonn, Johan Hofkens, Elke Debroye   +14 more
wiley   +1 more source

Hydrogen sensors based on AlGaN/AIN/GaN Schottky diodes

, 2008
Pt/AlGaN/AIN/GaN Schottky diodes are fabricated and characterized for hydrogen sensing. The Pt Schottky contact and the Ti/Al/Ni/Au ohmic contact are formed by evaporation. Both the forward and reverse currents of the device increase greatly when exposed
Wang, XH, Wang, JX, Wang, XH, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: wxh@mail.semi.ac.cn, Ran, JX, Wang, CM, Wang, BZ, Xiao, HL, Wang, XL, Feng, C, Yang, CB   +9 more
core  

Deciphering the Crystallinity‐Dependent Sensitivity of Charge Injection in n‐Channel Organic Transistors: Reliable Characterization and Optimized Performance

Advanced Science, EarlyView.
Precise characterization of n‐type organic semiconductors necessitates decoupling interfacial constraints from intrinsic charge transport. This work reveals that disordered polymers are particularly vulnerable to contact‐limited bottlenecks compared to their crystalline counterparts.
Walid Boukhili, Chan Zhang, Jianeng Ma, Changwoo Yu, Chee Leong Tan, Huabin Sun, Zhihao Yu, Guangan Yang, Xiang Wan, Li Zhu, Yong Xu, Liyang Yu, Ruipeng Li, Seung‐Hoon Lee, Zhuping Fei, Dongyoon Khim   +15 more
wiley   +1 more source

Comparison of inhomogeneous Schottky barrier modeling approaches in SiC polytypes. [PDF]

PLoS One
Mekaret F, Rabehi A, Zebentout B, Tizi S, Douara A, Guermoui M, Tibermacine IE, Alharbi AH, El-Kenawy EM, Habib M, Benamara Z.   +10 more
europepmc   +1 more source

An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors

, 2009
The gain mechanism in GaN Schottky barrier ultraviolet photodetectors is investigated by focused light beam. When the incident light illuminates the central region of the Schottky contact electrode, the responsivity changes very little with the increase ...
Yang H, Zhao DG, Zhu JJ, Wang H, Zhang SM, Jiang DS, Liu ZS, Zhao DG Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn   +7 more
core  

Coexisting Volatile and Nonvolatile Switching in 3D ALD‐IGZO Vertical RRAM for Fully Hardware‐Based Wide Reservoir Computing

Advanced Science, EarlyView.
A conformal ALD‐IGZO vertical RRAM integrates volatile and nonvolatile switching within a compact 2F architecture. Before forming, tunable volatile dynamics provide fading‐memory reservoir states, while after forming, stable multilevel conductance modulation enables hardware readout.
Seeun Lee, Jaewon Park, Nawoon Kim, Seohyeon Ju, Seong‐Cheol Jang, Hyun‐Suk Kim, Sungjun Kim   +6 more
wiley   +1 more source

Localized States' Role in MoS₂ Few-Layer Device: A Study by Schottky Capacitance Spectroscopy and Thermally Stimulated Current. [PDF]

ACS Omega
Gouveia RC, Cichetto L, Ferreira de Almeida L, Teodoro MD, Chiquito AJ.   +4 more
europepmc   +1 more source