Results 171 to 180 of about 14,138 (303)

ANALYSIS OF GAAS SCHOTTKY CONTACT TRAVELING-WAVE OPTICAL COUPLERS

, 1993
Traveling wave directional coupler-type electro-optic modulators based on GaAs Schottky contact microstrip lines are modeled and analyzed. The microwave propagation including losses in the structure is described by a simple quasi-TEM model. The lightwave
CHOI, WJ, KANG, KN, LEE, JI, CHO, KM, Hong, Songcheol   +4 more
core  

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig   +3 more
wiley   +1 more source

Effects of boron and nitrogen doping on the electronic properties of graphene-based heterostructures with two-dimensional semiconducting materials. [PDF]

PLoS One
Liu Z, Huang P, Luo Y, Huang P.
europepmc   +1 more source

A new perspective on the nature of graphene- semiconductor (3D/2D) Schottky contact: A combined theoretical and experimental approach

, 2016
In this paper we carry out a theoretical and experimental study of the nature of graphene/ (3D/2D)-semiconductor Schottky contact. We use quantum statistical theory to derive a simple and parameter-free carrier transport model of graphene/ (3D/2D ...
Adam, Shaffique, Liang, Shi Jun, Hu, Wei, DI BARTOLOMEO, Antonio, Ang, Lay Kee   +4 more
core  

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

Advanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao, Weiqi Dang, Gong‐Jie Ruan, Jiameng Sun, Xiaoyu Sun, Dehe Kong, Yinzhi Huang, Yuxuan Yuan, Qin Liu, Sicheng Chen, Long Zhao, Cong Wang, Pengfei Wang, Chen Pan, Yajun Fu, Shi‐Jun Liang   +15 more
wiley   +1 more source

Thermofield Effects in Graphite-like Amorphous Carbon Films with Nanoscale Structure. [PDF]

Materials (Basel)
Muratova EN, Vrublevsky IA, Moshnikov VA, Kozodaev DA, Gagarina AY, Parfenovich SE, Kavalenka DA.   +6 more
europepmc   +1 more source

Ti/Pt Schottky contact measurements for HEMT gate metallization using current-voltage method

, 2007
A study of Schottky contact from Ti/Pt metal stack on Si-doped AlGaAs HEMT supply layer using current-voltage method is presented here. The Schottky barrier heights at metal-semiconductor junction were determined on two samples prepared by MBE.
Husna Zayadi
core  

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Aging and Electrical Stability of DNTT Honey‐Gated OFETs

Advanced Electronic Materials, EarlyView.
DNTT honey‐gated organic transistors were fabricated and evaluated to assess short‐ and long‐term stability under electrical stress and aging. Short‐term transfer measurements (five days, 40 sweeps/day) showed minimal parameter shift, while extended measurements revealed gradual degradation over weeks.
Douglas H. Vieira, Ana C. de Paula, José D. F. Dias, Maria H. L. O. Fung, Rafael Furlan de Oliveira, Gabriel L. Nogueira, Keli F. Seidel, José P. M. Serbena, Neri Alves   +8 more
wiley   +1 more source

Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]

Materials (Basel)
Pu T, Li X, Li L, Ao JP.
europepmc   +1 more source