Advanced Electronic Materials, EarlyView.This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez +12 more
wiley +1 more source
Field-effect detected magnetic resonance of nitrogen-vacancy centers in diamond based on all-carbon Schottky contacts. [PDF]
Commun EngLe XP +5 more
europepmc +1 more source
Aging and Electrical Stability of DNTT Honey‐Gated OFETs
Advanced Electronic Materials, EarlyView.DNTT honey‐gated organic transistors were fabricated and evaluated to assess short‐ and long‐term stability under electrical stress and aging. Short‐term transfer measurements (five days, 40 sweeps/day) showed minimal parameter shift, while extended measurements revealed gradual degradation over weeks.
Douglas H. Vieira +8 more
wiley +1 more source
Two-dimensional TaS<sub>2</sub> as a contact material for MXene Sc<sub>2</sub>CF<sub>2</sub> semiconductors: a first-principles study. [PDF]
RSC AdvVu TV +4 more
europepmc +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Thermionic emission conduction in Mo AlGaN/GaN diodes in the presence of Schottky barrier inhomogeneities. [PDF]
Sci RepMilazzo S +4 more
europepmc +1 more source
Solution Processed Polymer Source‐Gated Transistors for Zero‐Power Photosensing
Advanced Electronic Materials, EarlyView.This study demonstrates the first solution‐processed bulk heterojunction organic source‐gated transistors (OSGTs) and photo‐OSGTs fabricated using DPP‐DTT: PCBM. Copper‐electrode OSGTs show deep off‐state at zero gate‐source voltage, channel length‐independent on‐state current, and low voltage saturation (γ = 0.22).
Eva Bestelink +6 more
wiley +1 more source
Design and Optimization of AlGaN/AlN/GaN L‑SBD for Radiofrequency Applications. [PDF]
ACS OmegaDudekula S +5 more
europepmc +1 more source
Quantitative Analysis and Mitigation Strategy for Hot Carrier Degradation in a‐IGZO Transistor
Advanced Electronic Materials, EarlyView.This work presents a quantitative analysis of hot carrier degradation in a‐IGZO transistors, revealing an asymmetric drain‐side Schottky barrier increase and localized defect generation. The transfer length method and SCLC measurements enable defect quantification.
Changeon Jin +4 more
wiley +1 more source
A Compact 380 GHz Zero-Bias Schottky Diode Detector for High-Sensitivity Radiometer Applications. [PDF]
Micromachines (Basel)Tang H, Deng Y, Zhang D.
europepmc +1 more source