Results 141 to 150 of about 42,398 (302)

60-700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes. [PDF]

Sensors (Basel), 2021
Pascu R, Pristavu G, Brezeanu G, Draghici F, Godignon P, Romanitan C, Serbanescu M, Tulbure A.   +7 more
europepmc   +1 more source

Vertical GaN Schottky Diodes Grown on Highly Conductive Ammono-GaN Substrate

, 2018
P. Kruszewski, P. Prystawko, Mikołaj Grabowski, Tomasz Sochacki, Aneta Sidor, Michał Boćkowski, J. Jasiński, Lidia Łukasiak, Ryszard Kisiel, M. Leszczyński   +9 more
openalex   +1 more source

The Electrical Properties of Schottky Barrier Diode Structures Based on HVPE Grown Sn Dopped Ga2O3 Layers

, 2022
A.Yu. Ivanov, А.В. Кремлева, Sh. Sh. Sharofidinov   +2 more
openalex   +1 more source

Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode Based Reverse Voltage Blocking Switch for Medium Voltage Current Source Inverter Application [PDF]

, 2023
Sneha Narasimhan, Ajit Kanale, Subhashish Bhattacharya, Jayant B. Baliga   +3 more
openalex   +1 more source

Air-bridged Schottky diodes for dynamically tunable millimeter-wave metamaterial phase shifters. [PDF]

Sci Rep, 2021
Vassos E, Churm J, Powell J, Viegas C, Alderman B, Feresidis A.   +5 more
europepmc   +1 more source

Analytical Solution to the Gradual Channel Approximation for Metal–Oxide‐Semiconductor Field‐Effect Transistors

physica status solidi (b), EarlyView.
Schematic of a metal‐oxide‐semiconductor field‐effect transistor at pinch‐off together with the channel potential. We revisit the problem of the potential distribution in an inversion channel field effect transistor (metal–oxide‐semiconductor field‐effect transistor) within the gradual channel approximation.
Marius Grundmann
wiley   +1 more source

Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles

Nanoscale Research Letters, 2011
Depositions on surfaces of semiconductor wafers of InP and GaN were performed from isooctane colloid solutions of palladium (Pd) nanoparticles (NPs) in AOT reverse micelles.
Zdansky Karel
doaj  

Wet‐Transferred MoS2 on Passivated InP: A Van der Waals Heterostructure for Advanced Optoelectronic Applications

physica status solidi (RRL) – Rapid Research Letters, Volume 19, Issue 5, May 2025.
This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi, Jae Hyeop Lee, Min Su Kim, Jaeseo Park, Jun Oh Kim, Teli Aviraj Mahadev, Beknalkar Sonali Ajay, Hong Hyuk Kim, Jae Cheol Shin   +8 more
wiley   +1 more source

Interface engineering in epitaxial growth of sputtered β-Ga2O3 films on Si substrates via TiN (111) buffer layer for Schottky barrier diodes

, 2023
Chao-Chun Yen, Anoop Kumar Singh, Po-Wei Wu, Hsin-Yu Chou, Dong‐Sing Wuu   +4 more
openalex   +1 more source

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

Small, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong, Maheswari Sivan, Jieming Pan, Zihang Fang, Jianan Li, Zefeng Xu, Shi Zhao, Quanzhen Wan, Evgeny Zamburg, Aaron Voon‐Yew Thean   +9 more
wiley   +1 more source