Results 151 to 160 of about 42,398 (302)
Molecular beam epitaxial In2Te3 electronic devices
NPG Asia MaterialsWe report on the electrical characteristics of field-effect transistors (FETs) and Schottky diodes based on In2Te3 grown on hexagonal boron nitride (h-BN) substrates utilizing molecular beam epitaxy (MBE).
Imhwan Kim +9 more
doaj +1 more source
Laser‐Direct Printed 2D Material‐Based Heterostructure for the Fabrication of Electronic Devices
Small, EarlyView.The Digital Laser‐Induced Forward Transfer (LIFT) approach is employed to pattern and stack 2D materials with micrometer‐scale precision. PdSe2 and MoSe2 are assembled into vertical p–n junctions, with graphene serving as a transparent electrode. The resulting laser‐transferred heterostructures exhibit high material quality and stable rectifying ...
Ilias Cheliotis +12 more
wiley +1 more source
Small, EarlyView.ABSTRACT Water pollution remains a serious global challenge; hence, the efficient, low‐cost, and environmentally friendly removal of pollutants from water has become a research hotspot. Photocatalytic microrobots can achieve autonomous movement and generate reactive oxygen species (ROS), presenting a great opportunity for water purification.
Yunhuan Yuan +4 more
wiley +1 more source
Ga2O3 field-plated schottky barrier diodes with a breakdown voltage of over 1 kV
, 2016 Keita Konishi +9 more
openalex +1 more source
Small, EarlyView.This review focuses on capability of Gallium Nitride (GaN)‐based supercapacitors, bordering the advancement from porous architecture to novel hybrid nanostructures. It systematically investigates synthesis approaches and charge storage mechanisms that generate remarkable energy densities and competent cyclic stability.
Farasat Haider +7 more
wiley +1 more source
Diamond Schottky barrier diodes
, 2010 Research on wide band gap semiconductors suitable for power electronic devices has spread rapidly in the last decade. The remarkable results exhibited by silicon carbide (SiC) Schottky batTier diodes (SBDs), commercially available since 2001, showed the potential of wide band gap semiconductors for replacing silicon (Si) in the range of medium to high ...
openaire +1 more source
AstroECP: towards more practical electron channeling contrast imaging
Journal of Applied Crystallography, EarlyView.We explore and address many of the major challenges associated with using electron channeling contrast imaging in a scanning electron microscope, with the goal of more easily revealing and characterizing crystalline defects such as dislocations.Electron channeling contrast imaging (ECCI) is a scanning electron microscope based technique which enables ...
M. Haroon Qaiser +7 more
wiley +1 more source
Progress on single barrier varactors for submillimeter wave power generation [PDF]
Theoretical work on Single Barrier Varactor (SBV) diodes, indicate that the efficiency for a multiplier has a maximum for a considerably smaller capacitance variation than previously thought. The theoretical calculations are performed, both with a simple
Groenqvist, Hans +4 more
core +1 more source
Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures
physica status solidi (a), Volume 223, Issue 7, 7 April 2026.The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu +2 more
wiley +1 more source