Results 271 to 280 of about 4,820 (302)
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The model of secondary atom excited states formation
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993Abstract The model Hamiltonian is chosen and the mathematical formulation of the problem is discussed. The basic model equations of the excited states formation of the atoms which leave the metal surface are obtained. The calculation of the secondary atoms excitation probabilities proves the model to hold prospects.
V.G. Drobnich, S.Yu. Medvedev
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Secondary laser cooling of strontium-88 atoms
Journal of Experimental and Theoretical Physics, 2015The secondary laser cooling of a cloud of strontium-88 atoms on the 1 S 0–3 P 1 (689 nm) intercombination transition captured into a magneto-optical trap has been demonstrated. We describe in detail the recapture of atoms from
S. A. Strelkin +6 more
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Heavy Atom Secondary Kinetic Isotope Effect on H-Tunneling
The Journal of Physical Chemistry A, 2018Although frequently employed, heavy atom kinetic isotope effects (KIE) have not been reported for quantum mechanical tunneling reactions. Here we examine the secondary KIE through 13C-substitution of the carbene atom in methylhydroxycarbene (H3C-C̈-OH) in its [1,2]H-tunneling shift reaction to acetaldehyde (H3C-CHO).
André K. Eckhardt +2 more
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Atomic-number dependence of the secondary-electron cascade from solids
Physical Review B, 1994The parameters A and m in the power-law expression for the kinetic-energy dependence of the secondary-electron cascade of solid elements has been measured as a function of the atomic number of the sample. A pattern has been observed in the values of both A and m which is related to the variations in the Periodic Table.
, Greenwood, , Prutton, , Roberts
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Microscopy and Microanalysis, 2019
AbstractFor a long time, secondary ion mass spectrometry (SIMS) was the only technique allowing impurity concentrations below 1 at% to be precisely measured in a sample with a depth resolution of few nanometers. For example, SIMS is the classical technique used in microelectronics to study dopant distribution in semiconductors and became, after ...
Alain, Portavoce +2 more
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AbstractFor a long time, secondary ion mass spectrometry (SIMS) was the only technique allowing impurity concentrations below 1 at% to be precisely measured in a sample with a depth resolution of few nanometers. For example, SIMS is the classical technique used in microelectronics to study dopant distribution in semiconductors and became, after ...
Alain, Portavoce +2 more
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MODELING OF PRIMARY AND SECONDARY ATOMIZATION WITH SIMPLEX ATOMIZERS
Multiphase Science and Technology, 2020Kushal Ghate +2 more
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Electric Strength of Secondary-Emission Atomic Batteries
Atomic Energy, 2001Electric strength of multilayer atomic batteries operating on secondary electrons is examined. Analytical expressions are obtained for the breakdown voltage. It is shown that even when the diodes are connected in parallel the total voltage of all diodes determines breakdown.
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Experimental characterization of secondary atomization at high Ohnesorge numbers
International Journal of Multiphase Flow, 2021Vishnu Radhakrishna +2 more
exaly

