Results 101 to 110 of about 341,789 (294)
Alkali Ion‐Incorporated HfO2 Dielectrics for Reconfigurable Neuromorphic Computing
Advanced Functional Materials, EarlyView.This work presents an indium gallium zinc oxide (IGZO) transistor with an alkali cation‐integrated hafnium dioxide (HfO2) dielectric exhibiting synaptic behavior via ion retention. The solution‐based film fabrication strategy overcomes the limitations of atomic layer deposition (ALD) and precursor coating, enabling the control of synaptic retention ...
Seung Yeon Ki +7 more
wiley +1 more source
Preparation of ZnO-SnO2 ceramic materials by a coprecipitation method
Boletín de la Sociedad Española de Cerámica y Vidrio, 2006 Tin (IV)-doped zinc oxide ceramics find its main application as specific gas sensor devices. The sensor ability of the mixture and its particular affinity for a particular gas (selectivity) depends both on the crystalline phases in the microstructure of ...
Caballero, A. C. +4 more
doaj
Selection Strategies for Flexible Pressure Sensor Electrode Materials Toward Ultrafast Response
Advanced Functional Materials, EarlyView.This study reveals, for the first time, how the electrode–organic interface governs the temporal performance of flexible pressure sensors. By pairing high‐conductivity CVD PEDOT with commonly used metal electrodes, the authors demonstrate that interfacial energy alignment dictates microsecond‐scale response, providing a straightforward design strategy ...
Jinwook Baek +11 more
wiley +1 more source
Revista Técnica de la Facultad de Ingeniería, 2007 En este trabajo se muestran los resultados obtenidos del estudio del crecimiento electroquímico y caracterización de películas delgadas del semiconductor CdTe.
Milagro Montilla +2 more
doaj
Advanced Functional Materials, EarlyView.A charge injection layer is introduced via RIE to decouple the dual functions of the source electrode: lowering contact resistance through doping to enhance charge injection, while SAM modification on the top surface minimizes leakage current. This strategy enables OSBTs to achieve a high on/off ratio with improved stability and performance.
Hye Ryun Sim +6 more
wiley +1 more source
Surface-Plasmon-Polaritons at the Interface of Graded Index Material and Semiconductor
, 2016 Tatjana Gric
openalex +1 more source
Structure–Transport–Ion Retention Coupling for Enhanced Nonvolatile Artificial Synapses
Advanced Functional Materials, EarlyView.Nitrogen incorporation into the conjugated backbone of donor–acceptor polymers enables efficient charge transfer and deep ion embedding in organic electrochemical synaptic transistors (OESTs). This molecular‐level design enhances non‐volatile synaptic properties, providing a new strategy for developing high‐performance and reliable neuromorphic devices.
Donghwa Lee +5 more
wiley +1 more source
Strain-voltage and current-voltage Scanning Probe Microscopy (SPM) response of ionic semiconductor thin films: probing of deformation potential [PDF]
, 2010 Anna N. Morozovska +3 more
openalex +1 more source