Results 91 to 100 of about 103,204 (298)
High Speed Chaos in Optical Feedback System with Flexible Timescales
, 2003 We describe a new opto-electronic device with time-delayed feedback that uses a Mach-Zehnder interferometer as passive nonlinearity and a semiconductor laser as a current-to-optical-frequency converter.
Blakely, J. N. +2 more
core +2 more sources
Advanced Functional Materials, EarlyView.A chiral photodetector capable of selectively distinguishing left‐ and right‐handed circularly polarized light is experimentally demonstrated. The device, which features a nanopatterned electrode inverse‐designed by a genetic algorithm within a metal–dielectric–metal nanocavity that incorporates a vacuum‐deposited small‐molecule multilayer, exhibits ...
Kyung Ryoul Park +3 more
wiley +1 more source
General Geometric Fluctuation Modeling for Device Variability Analysis
, 2015 The authors propose a new modeling approach based on the impedance field method (IFM) to analyze the general geometric variations in device simulations.
Choi, Woosung +4 more
core +1 more source
Advanced Functional Materials, EarlyView.In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter +4 more
wiley +1 more source
Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry
Advanced Functional Materials, EarlyView.In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite +5 more
wiley +1 more source
IEEE Access, 2019 Empirical models have been widely and successfully used in device modeling in the past few decades. However, they are becoming increasingly intricate to accurately capture the complex thermal effects in semiconductor devices.
Wenrui Hu +3 more
doaj +1 more source
, 2010 We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate voltages applied.
C. Borrás Pinilla +13 more
core +1 more source
Advanced Functional Materials, EarlyView.Rational halogen mixing strategy was employed to shift the bandgap of Cs2PbBr2I2 from ultraviolet to visible region, enabling first realization of a visible‐light photodetector with this 2D layered Ruddlesden‐Popper perovskite material. Under illumination, light‐induced internal field forms and drives trap‐mediated persistent photoconductivity ...
Md Fahim Al Fattah +11 more
wiley +1 more source
AIP Advances, 2017 On the basis of semiconductor-ferromagnet GaAs-Fe3Si core-shell nanowires (Nws) we compare the facilities of magnetic Nw ensemble measurements by superconducting quantum interference device magnetometry versus investigations on single Nws by magnetic ...
Maria Hilse +2 more
doaj +1 more source
Broadband, Flexible, Skin‐Compatible Carbon Dots/Graphene Photodetectors for Wearable Applications
Advanced Functional Materials, EarlyView.Broadband, flexible photodetectors integrating nitrogen‐rich carbon dots with single‐layer graphene on plastic substrates are demonstrated. A biocompatible chitosan–glycerol electrolyte enables efficient low‐voltage gating and on‐skin operation. The devices exhibit ultraviolet‐to‐near‐infrared response, mechanical robustness under bending, and verified
Nouha Loudhaief +20 more
wiley +1 more source