Results 91 to 100 of about 161,989 (332)

Experiments on MEMS Integration in 0.25 μm CMOS Process

Sensors, 2018
In this paper, we share our practical experience gained during the development of CMOS-MEMS (Complementary Metal-Oxide Semiconductor Micro Electro Mechanical Systems) devices in IHP SG25 technology.
Piotr Michalik, Daniel Fernández, Matthias Wietstruck, Mehmet Kaynak, Jordi Madrenas   +4 more
doaj   +1 more source

Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 °C [PDF]

Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we demonstrate Ni/Al0.68Sc0.32N/4H-SiC metal-ferroelectric-semiconductor capacitors for high-temperature non-volatile memory applications.
arxiv   +1 more source

Quality Control of Lifetime Drift in Discrete Electrical Parameters in Semiconductor Devices via Transition Modeling [PDF]

Microelectronics Reliability, Volume 164, 2025, 115555, ISSN 0026-2714
Semiconductors are widely used in various applications and critical infrastructures. These devices have specified lifetimes and quality targets that manufacturers must achieve. Lifetime estimation is conducted through accelerated stress tests. Electrical parameters are measured at multiple times during a stress test procedure.
arxiv   +1 more source

Paralleling of IGBT Power Semiconductor Devices and Reliability Issues [PDF]

, 2023
Ravi Nath Tripathi, Ichiro Omura
openalex   +1 more source

Self‐Poled Halide Perovskite Ruddlesden‐Popper Ferroelectric‐Photovoltaic Semiconductor Thin Films and Their Energy Harvesting Properties

Advanced Functional Materials, EarlyView.
Low‐dimensional halide perovskite thin films, (BA)2(MA)n‐1PbnBr3n+1 (n = 1, 2), exhibit both semiconducting and ferroelectric properties, enabling mechanical and light energy harvesting. Using Cr/Cr₂O₃ or PCBM as barrier layers ensures reproducible ferroelectricity.
Raja Sekhar Muddam, Shaoyang Wang, Nirmal Prashanth Maria Joseph Raj, Qingping Wang, Philip Wijesinghe, Julia Payne, Matthew S. Dyer, Chris Bowen, Lethy Krishnan Jagadamma   +8 more
wiley   +1 more source

Threshold voltage instability of SiC MOSFETs under very‐high temperature and wide gate bias

IET Power Electronics
Threshold voltage (VTH) instability affects the reliability of silicon carbide (SiC) MOSFETs. In this article, the influence of gate bias (VGS) and high temperature on VTH instability is investigated under wide VGS and very‐high temperature range (150°C ...
Cong Chen, Yumeng Cai, Peng Sun, Zhibin Zhao   +3 more
doaj   +1 more source

Contamination Free Manufacturing of Semiconductor Devices for High Reliability [PDF]

, 2008
Jagdish Prasad
openalex   +1 more source

Turning on Selective H2S Gas Sensing Activity in Ternary Nickel Tungstate Strongly Correlated Electron System Through Sub‐Gap Band Manipulation

Advanced Functional Materials, EarlyView.
A strongly correlated electron system (SCES) exhibits pronounced insulating behavior due to Coulombic repulsion between cations, which generates a charge gap. This study investigates the tuning of the band structure in NiWO4‐based SCES via Cu doping at substitutional sites and Li doping at interstitial sites.
Seung Yong Lee, Ha Eun Choa, Seung Joon Choi, Chul Oh Park, Gi Hyun Park, June Won Suh, Si Hoon Jeong, Yunseong Ji, Changhyun Jin, Jeong Yun Hwang, Inseo Kim, Jihye Park, Joonho Bang, Myung Sik Choi, Hyo‐Jick Choi, Dong Won Chun, Kimoon Lee, Wooyoung Lee, Kyu Hyoung Lee   +18 more
wiley   +1 more source

3D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for High‐Density and High‐Reliability Logic‐In‐Memory Application

Advanced Electronic Materials
A new type of ferroelectric memory device with high reliability and complementary metal‐oxide‐semiconductor (CMOS) compatibility characteristics is an important condition for achieving integrated memory and computing chips. Here, 3D stacked ferroelectric
Jiajie Yu, Tianyu Wang, Chen Lu, Zhenhai Li, Kangli Xu, Yongkai Liu, Yifan Song, Jialin Meng, Hao Zhu, Qingqing Sun, David Wei Zhang, Lin Chen   +11 more
doaj   +1 more source

Factors to Influence Thermal-Cycling Reliability of Passivation Layers in Semiconductor Devices Utilizing Lead-on-Chip (LOC) Die Attach Technique [PDF]

, 2009
성민 이, 성란 이
openalex   +1 more source