Results 111 to 120 of about 161,989 (332)

Historical Overview of Semiconductor Device Reliability for Telecommunication Networks––Field Data, Prediction Model of Device Failure Rate, and Wear-out Failure Analyses at NTT [PDF]

, 2013
Noboru Shiono, Eisuke Arai, S. Mutoh
openalex   +1 more source

Phase Engineering of a 1D van der Waals Thin Film

Advanced Functional Materials, EarlyView.
Explores the transformative potential of 1D van der Waals materials, focusing on the monoclinic‐to‐tetragonal phase transition in NbTe4, its atomic‐scale mechanisms, and significant metal‐insulator transition (MIT) behavior. Highlights advanced imaging insights and the applications of reversible phase transitions in memory devices, sensors, and ...
Yi Shuang, Daisuke Ando, Yuji Sutou
wiley   +1 more source

First-principles design of MSi2N4/WSi2N4 (M = Ti, Zr, Hf): Structural stability, thermal, electronic and optical properties

Results in Physics
The family of two-dimensional MA2Z4 heterostructures has received increasing attention in recent years. To investigate the structural stability, electrical structure, optical characteristics, and thermal properties (M = Ti, Zr, and Hf) of MSi2N4/WSi2N4 ...
Guang Wang, Mengya Huang, Zhao Ding, Xiang Guo, Zhengli Zhang, Xuefei Liu, Yi Wang   +6 more
doaj  

An RC snubber design method to achieve optimized switching noise‐loss trade‐off of cascode GaN HEMTs

IET Power Electronics
The cascode gallium nitride high electron mobility transistors (GaN HEMTs) are very vulnerable to self‐sustained turn‐off oscillation due to their cascode configuration.
Peng Xue, Eckart Hoene, Pooya Davari
doaj   +1 more source

Deterministic Writing of Field‐Free and Unipolar Spin‐Transfer Torque Magnetic Random‐Access Memory

Advanced Functional Materials, EarlyView.
Deterministic unipolar‐switching STT‐MRAM with field‐free operation is experimentally demonstrated. The device features a compact 4F2 cell architecture using a diode as the access device and a single magnetic tunneling junction. Unlike conventional bipolar switching STT‐MRAM requiring a three‐terminal access transistor in the array, this design offers ...
Ming‐Chun Hong, Ching Shih, Guan‐Long Chen, Yu‐Chen Hsin, Chen‐Yu Yang, Hsin‐Han Lee, Kuan‐Ming Chen, Yu‐Ho Kao, Tsai‐Yu Wu, Chiao‐Yun Lo, Sin‐You Huang, Cheng‐Yi Shih, Shan‐Yi Yang, I‐Jung Wang, Yao‐Jen Chang, Shih‐Ching Chiu, Yi‐Hui Su, Chih‐Yao Wang, Jeng‐Hua Wei, Shyh‐Shyuan Sheu, Wei‐Chung Lo, Shih‐Chieh Chang, Tuo‐Hung Hou   +22 more
wiley   +1 more source

Built‐In Electric Field in 2D/2D LDH/Antimonene Heterostructure to Induce Stable β‐NiOOH at Ultralow Potential for Cost‐Effective Water Electrolysis

Advanced Functional Materials, EarlyView.
In this paper, a built‐in electric field (BEF) strategy is proposed to fabricate NiFe‐LDH/antimonene heterostructure as bifunctional electrocatalysts for oxygen evolution reaction (OER) and hydrogen evolution reaction (HER). The formed BEF generates a local potential that reduces the potential for the formation of β‐NiOOH, thereby enabling ultra‐low ...
Jingkun Wang, Xiaoning Li, Haojie Liang, Chenxi Zhang, Huayun Du, Ying Sun, Hui Li, Hongge Pan, Yuying Hao, Min Zhao, Tianbao Li, Tianyi Ma   +11 more
wiley   +1 more source

High reliability screening of semiconductor and integrated circuit devices [PDF]

, 1969
Jack P. Lombardi, Lauren McDonough, H. Padden   +2 more
openalex   +1 more source

Flexible Optical Fiber Stress/Temperature Dual‐Mode Sensing Based on CaZnOS:Nd,Er

Advanced Functional Materials, EarlyView.
Temperature and stress sensing based on flexible optical fibers may be the key to future artificial intelligence's perception of the world, here an optical fiber sensor capable of realizing such dual mode sensing is preliminary confirmed based on CaZnOS:Nd3+,Er3+.
Pan Zheng, Yao Xiao, Puxian Xiong, Sijie Su, Anping Yang, Xuesong Wang, Shengbin Xu, Peishan Shao, Zhiyao Zhou, Sheng Wu, Enhai Song, Jiulin Gan, Dongdan Chen   +12 more
wiley   +1 more source

Flux‐Regulated Crystallization of Perovskites Using Machine Learning‐Predicted Solvent Evaporation Rates for X‐Ray Detectors

Advanced Functional Materials, EarlyView.
By integrating machine learning into flux‐regulated crystallization (FRC), accurate prediction of solvent evaporation rates in real time, improving crystallization control and reducing crystal growth variability by over threefold, is achieved. This enhances the reproducibility and quality of perovskite single crystals, leading to reproducible ...
Tatiane Pretto, Sergey Dayneko, Antoine Pavesic Junior, Nicholas Sandor, Alexander Hart, Yuki Haruta, Magdalena Bazalova‐Carter, Marcos J. L. Santos, Makhsud I. Saidaminov   +8 more
wiley   +1 more source

The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms

Micromachines
With the technological scaling of metal–oxide–semiconductor field-effect transistors (MOSFETs) and the scarcity of circuit design margins, the characteristics of device reliability have garnered widespread attention.
Zixuan Sun, Sihao Chen, Lining Zhang, Ru Huang, Runsheng Wang   +4 more
doaj   +1 more source