Results 11 to 20 of about 86,576 (325)
Reliability Evaluation of Multi-Mechanism Failure for Semiconductor Devices Using Physics-of-Failure Technique and Maximum Entropy Principle [PDF]
IEEE Access, 2020 The physics-of-failure (PoF) technique is a practical approach to evaluate the reliability of semiconductor devices. However, the PoF approaches are usually insufficient in dealing with multi-mechanism failure and fitting the Monte Carlo (MC) sampling ...
Bo Wan, Ye Wang, Yutai Su, Guicui Fu
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Review on the Thermal Models Applications in the Reliability of Power Semiconductor Device [PDF]
IET Power ElectronicsThe power semiconductor device plays a key role in energy conversion and management, and the failure of the device would make a great economic loss.
Jun Zhang +3 more
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Device reliability challenges for modern semiconductor circuit design – a review [PDF]
Advances in Radio Science, 2009 Product development based on highly integrated semiconductor circuits faces various challenges. To ensure the function of circuits the electrical parameters of every device must be in a specific window.
C. Schlünder
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Reliability issues in high-voltage semiconductor devices
, 2012 Semiconductor devices are used in many different application areas and play an important role in the modern world. Advances in technology, customer demands, and cost pressure lead to higher integration densities and to smart power structures, which incorporate high- and low-voltage devices on the same chip.
O. Triebl
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Enhance Reliability of Semiconductor Devices in Power Converters [PDF]
Electronics, 2020 As one of the most vulnerable components to temperature and temperature cycling conditions in power electronics converter systems in these application fields as wind power, electric vehicles, drive system, etc., power semiconductor devices draw great concern in terms of reliability.
Minh Hoang Nguyen, Sangshin Kwak
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Power Semiconductor Device Humidity Reliability Study
International Journal of Mechanical and Electrical EngineeringThis paper aims to study the aging mechanism of power semiconductor devices in high humidity environments, propose anti-humidity optimization design methods, and explore the humidity reliability of these devices in-depth. The reliability of the devices can be examined through High Humidity High Temperature Reverse Bias Testing to simulate aging in high
Jiale Wang
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Reliability of reverse properties of power semiconductor devices:
Microelectronics Journal, 2008 Reliability of reverse properties of power semiconductor devices is an important condition for their practical application. Usual standard tests do not reveal total information concerning the technological genetic aspects of devices production. These aspects can be linked with individual technological operations, most frequently with preparation of ...
Václav Papež, B. Kojecký, D. Šámal
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Characterization and Modeling of Semiconductor Power Devices Reliability [PDF]
, 2017 This thesis aims at studying, characterizing and modeling the trapping and de-trapping mechanisms occurring during the ON-state operation mode and leading to the degradation of semiconductor power devices. In this operating condition, the combined effect of moderate electric fields, high currents and temperatures due to self-heating effects can ...
Andrea Natale Tallarico
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An Initial study on The Reliability of Power Semiconductor Devices [PDF]
, 2010 An initial literature study combined with some basic comparative simulations has been performed on different electricfield modulation techniques and the subsequent reliability issues are reported for power semiconductor devices.
B. K. Boksteen +3 more
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Present Problems of Reliability of Power Semiconductor Devices
Acta Polytechnica, 2000 The paper presents an overview of the main causes of failures of modern switching devices as power MOSFETs, IGBTs, GTOs. The attention is paid to problems of both homogeneity of semiconductor structures and operating conditions, especially at high power devices, which are usually realised as an integration of a high number in parallel connected ...
V. Benda
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