Advances in High-Voltage Power Electronics Using Ga<sub>2</sub>O<sub>3</sub>-Based HEMT: Modeling. [PDF]
Alhasani R +4 more
europepmc +1 more source
Nanoscale‐grooved indium gallium oxide (IGO) semiconductors, patterned via thermal nanoimprint lithography (NIL) using CD/DVD templates, are integrated into electrolyte‐gated transistor biosensors to overcome Debye length limitations. Precisely engineered concave–convex nanostructures modulate local electrostatic potentials, extend the effective Debye ...
Jong Yu Song +5 more
wiley +1 more source
Optimizing TiO2/HfO2 Multilayer RRAM for Self-Rectifying Characteristics. [PDF]
Nam CH, Baek MH.
europepmc +1 more source
Drug‐Free Thrombolysis Mediated by Physically Activated Micro/Nanoparticles
Overview of particle‐mediated thrombolytic effects (thermal, mechanical, and chemical) and their activating physical stimuli (light, ultrasound, and magnetic field) in drug‐free thrombolysis. ABSTRACT Thrombus‐associated disorders rank among the world's leading causes of death, with ischemic heart disease and stroke as the main contributors.
Pierre Sarfati +2 more
wiley +1 more source
A Fully Integrated Monolithic Monitor for Aging-Induced Leakage Current Characterization. [PDF]
Darko EN +4 more
europepmc +1 more source
Frontier Advances of Emerging High‐Entropy Anodes in Alkali Metal‐Ion Batteries
Recent advances in microscopic morphology control of high‐entropy anode materials for alkali metal‐ion batteries. Abstract With the growing demand for sustainable energy, portable energy storage systems have become increasingly critical. Among them, the development of rechargeable batteries is primarily driven by breakthroughs in electrode materials ...
Liang Du +14 more
wiley +1 more source
Effects of Annealing Temperature Combinations in InO<sub>x</sub>/AlO<sub>x</sub> Heterostructure for High-Performance and Stable Solution-Processed Junctionless Transistors. [PDF]
Park J +8 more
europepmc +1 more source
Review of Power Semiconductor Device Reliability for Power Converters
Bo Wang
openalex +1 more source
Tin hexathiophosphate memristors leverage intrinsic nanopores together with a guided filament formation strategy to regulate titanium ion motion and switching behavior. The devices support reliable nonvolatile memory and reconfigurable logic‐in‐memory, demonstrating 14 Boolean logic functions in a single cell.
Thaw Tint Te Tun +7 more
wiley +1 more source
Investigation of Electrical Behavior of Au/Ti/AlN/Si Schottky Diode via Gaussian Distribution Barrier Modeling. [PDF]
Karaca A, Yıldız DE, Tataroğlu A.
europepmc +1 more source

