Results 271 to 280 of about 86,576 (325)

Transistor‐Level Activation Functions via Two‐Gate Designs: From Analog Sigmoid and Gaussian Control to Real‐Time Hardware Demonstrations

Advanced Materials, EarlyView.
Screen gate‐based transistors are presented, enabling tunable analog sigmoid and Gaussian activations. The SA‐transistor improves MRI classification accuracy, while the GA‐transistor supports precise Gaussian kernel tuning for forecasting. Both functions are implemented in a single device, offering compact, energy‐efficient analog AI processing ...
Junhyung Cho, Youngmin Han, Won Woo Lee, Youngwoo Yoo, Kannan Udaya Mohanan, Chang‐Hyun Kim, Junhwan Choi, Young‐Joon Kim, Wonjun Shin, Hocheon Yoo   +9 more
wiley   +1 more source

Investigation on High-Temperature and High-Field Reliability of NMOS Devices Fabricated Using 28 nm Technology After Heavy-Ion Irradiation. [PDF]

Micromachines (Basel)
Cao Y, Zhang Z, Zhang L, Li M, Su S, Zhang W, Xu Y, Huang D, Liu L, Lv L, Ma X.   +10 more
europepmc   +1 more source

Effectiveness of models of degradation of functional parameters for predicting the parametric reliability of semiconductor devices

, 2019
С. М. Боровиков, Nikolai Tsyrelchuk, S. S. Dick, Е. Н. Шнейдеров   +3 more
openalex   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source

Recent advances in ferroelectric materials, devices, and in-memory computing applications. [PDF]

Nano Converg
Hwang H, Youn S, Kim H.
europepmc   +1 more source

Directional Flow of Confined Polaritons in CrSBr

Advanced Materials, EarlyView.
CrSBr, a layered magnetic semiconductor, naturally channels self‐hybridized excitonpolaritons into highly directional flow. Its intrinsic optical anisotropy, high refractive index, and strong lightmatter coupling enable long‐range guided modes along the a‐axis, with propagation lengths set by their excitonphoton admixture.
Pratap Chandra Adak, Sichao Yu, Jaime Abad‐Arredondo, Biswajit Datta, Andy Cruz, Sorah Fischer, Kseniia Mosina, Zdeněk Sofer, Antonio I. Fernández‐Domínguez, Francisco J. Garcia‐Vidal, Vinod M. Menon   +10 more
wiley   +1 more source

Effects of Switching on the 2-DEG Channel in Commercial E-Mode GaN-on-Si HEMT. [PDF]

Micromachines (Basel)
Baca-Arroyo R.
europepmc   +1 more source

Electrically Readable Lateral Flow Assay Using Organic Transistors for Diagnostic Applications

Advanced Materials, EarlyView.
Electrolyte‐gated organic field‐effect transistors (EGOFETs) are integrated with lateral flow (LF) paper fluidics to create a reusable, portable, and low‐cost point‐of‐care (PoC) diagnostic test. The devices are validated for Human Immunoglobulin G detection, achieving high sensitivity (0.1 fm), selectivity, and reproducibility with rapid results in 20–
María Jesús Ortiz‐Aguayo, Carme Martínez‐Domingo, Diego Gutiérrez, Dean Kos, Marta Mas‐Torrent   +4 more
wiley   +1 more source

Modeling and simulation of ZnO-based TFTs by dielectric engineering and temperature analysis for enhanced performance. [PDF]

Sci Rep
Kumar P, Askari SSA, Das MK.
europepmc   +1 more source

Gate Metal Defect Screening at Wafer-Level for Improvement of HTGB in Power GaN HEMT. [PDF]

Micromachines (Basel)
Chuang YT, Tumilty N.
europepmc   +1 more source