Results 271 to 280 of about 161,989 (332)

Reliability Testing of Semiconductor Devices in a Humid Environment

Journal of the IEST, 1993
The influence of humidity on semiconductor device reliability is investigated with two main purposes: to emphasize the role of humidity in the failure process as a stress factor and to model the reliability-humidity relationship. Experiments were performed on two types of plastic encapsulated semiconductor devices (optoelectronic and ICs).
Marius Bazu, Mihai Tazlauanu
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Optical semiconductor device reliability

Microelectronics Reliability, 2002
Abstract Based on the degradation modes and mechanisms clarified in 1980s and 1990s, reliability of laser diodes and photodiodes is discussed for application to current optical fiber networks such as communication systems employing wavelength-division-multiplexing technique (WDM), high-frequency modulation technique, etc.
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Instrumentation for Innovative Semiconductor Power Devices Reliability Tests

International Journal of Engineering and Industries, 2013
An automated system, designed to perform innovative reliability tests on semiconductor power devices, is reported. Hardware and software modules have been specifically developed for the demonstration of the proposed methodology. Both High Temperature Reverse Bias (HTRB) and Electrical Characterization Test (ECT) are executed by the system on power ...
Giuseppe Consentino, J. L. Hernandez Ambato, Donatella De Pasquale, Calogero Pace   +3 more
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A method for the rapid evaluation of semiconductor device reliability

IRE Transactions on Electron Devices, 1960
This paper describes a method for the evaluation of semiconductor device reliability in very short times by progressively increasing the stress level of the test until all the devices have failed. This technique enables an approximate evaluation to be obtained in a time of one week with about fifty devices.
G.A. Dodson, B.T. Howard
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Semiconductor device reliability vs process quality

Microelectronics Reliability, 1992
Abstract This paper describes a method for defining a quantitative model relating “quality” expressed in terms of parameter distributions and “reliability” expressed in terms of failure rates. This model makes it possible to generate a more realistic failure rate estimate for semiconductor devices.
Paul Giotta, Riko Radojcic
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Reliability prediction modeling of semiconductor light emitting device [PDF]

IEEE Transactions on Device and Materials Reliability, 2003
This paper presents a probabilistic-approach-based reliability prediction model of semiconductor light emitting devices. Using this model with given initial light-emitting performance and degradation behavior otherwise determined by experiment, the reliability function of the devices is obtained, and the results correlate well with experimental results.
Jingsong Xie, Michael Pecht
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Reliability of semiconductor devices - The need for simulation

2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, 2011
Reliability requirements for semiconductor devices have increased tremendously in the past years. However, product qualification is still dominated by standard stress test procedures. Despite improved approaches that have entered the discussion recently, testing alone will not suffice to prove very low failure rates.
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Reliability of reverse properties of power semiconductor devices:

Microelectronics Journal, 2008
Reliability of reverse properties of power semiconductor devices is an important condition for their practical application. Usual standard tests do not reveal total information concerning the technological genetic aspects of devices production. These aspects can be linked with individual technological operations, most frequently with preparation of ...
V. Pape, B. Kojecký, D. Šámal
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Status of Compound Semiconductor Device Reliability

1990
A review is made of compound semiconductor device reliability from the period 1980 to the present. Emphasis is placed on technology based on field effect transistors (FETs). Many reliability studies were made of small signal GaAs FETs in the 1970s and of GaAs power FETs in the 1980’s; a substantial reliability base exists for these devices.
W. T. Anderson, A. Christou
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Reliable electron bombarded semiconductor power devices

1973 International Electron Devices Meeting, 1973
During the earlier development of EBS devices, degradation mechanisms imposed severe limitations on achievable performance and operating life. Essentially all of the difficulties have been overcome and a number of devices have now operated for many thousands of hours at high average power with no failures.
Aris Silzars, A. Ballonoff, D.J. Bates, G. Taylor   +3 more
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