Results 281 to 290 of about 161,989 (332)
Reliability issues in high-voltage semiconductor devices [PDF]
Semiconductor devices are used in many different application areas and play an important role in the modern world. Advances in technology, customer demands, and cost pressure lead to higher integration densities and to smart power structures, which incorporate high- and low-voltage devices on the same chip.
openaire +1 more source
Some of the next articles are maybe not open access.
Related searches:
Related searches:
Low-Temperature Passivation of Semiconductor Devices and Their Reliability
IEEE Transactions on Reliability, 1970Some electrical and physical characteristics of integrated circuits with passivation by low-temperature vapor deposition of glass were studied. It was found that 1) passivated devices have more resistance to aluminum corrosion than nonpassivated devices, 2) during temperature cycling the glass on the top of the aluminum inhibits the formation of ...
Chao C. Mai, Theodore S. Whitehouse
openaire +2 more sources
Book review: Reliability and Degradation of Semiconductor Devices and Circuits
Johnston
openaire +3 more sources
Strategies for improving the reliability of solder joints on power semiconductor devices
Soldering & Surface Mount Technology, 2003In this paper, some strategies taken to improve the reliability of solder joints on power devices in single device and multi‐chip packages are presented. A strategy for improving solder joint reliability by adjusting solder joint geometry, underfilling and utilization of flexible substrates is discussed with emphasis on triple‐stacked solder joints ...
Jesus N. Calata+4 more
openaire +3 more sources
Building reliability monitors for power semiconductor devices
2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486), 2002Statistical analyses were used to build an efficient reliability monitor for power semiconductor devices. Benefits for the device manufacturing are obtained.
C. Tibeica, F. Turtudau, L. Galateanu
openaire +2 more sources
An Efficient and Reliable Approach for Semiconductor Device Parameter Extraction
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1986This paper presents an efficient and reliable method for general semiconductor device parameter extraction. The parameter extraction technique consists of minimizing a nonlinear objective function. A hybrid approach based on strategical combinations of the Gauss method and a novel minimum search scheme is employed. Various of strategies are proposed to
Shui-Jinn Wang+2 more
openaire +1 more source
Testing for Reliability Qualification of Semiconductor Memory Devices
16th International Reliability Physics Symposium, 1978This presentation describes the essence of the reliability qualification program and procedures which have evolved since we first started designing semiconductor memory systems in 1970. The goal for the program is to determine and maintain the reliability of the semiconductor memory devices and systems over their whole life.
openaire +2 more sources
Reliability of compound semiconductor devices for space applications
Microelectronics Reliability, 1999Abstract Application of semiconductor devices in high reliability space systems requires a thorough understanding of the reliability and failure mechanisms associated with the selected devices. This paper provides a description of the reliability and qualification issues related to the application of compound semiconductor devices in critical space ...
openaire +2 more sources
Reliability Testing of Semiconductor Optical Devices
2012Reliability of semiconductor optical devices used in recent systems and equipment is described from an aspect of the degradation mechanisms observed on various reliability tests. The degradation mechanisms clarified for last three decades still govern the device reliability in recent systems and equipment.
openaire +2 more sources
Reliability Issue in Compound Semiconductor Heterojunction Devices
1998The failure mechanisms affecting electron devices based on compound semiconductors are reviewed.
FANTINI, Fausto+8 more
openaire +3 more sources