Results 281 to 290 of about 86,576 (325)

Bi₂O₂Se-Based Monolithic Floating-Gate Nonvolatile Memory with Enhanced Charge Retention and Switching Performance. [PDF]

ACS Nano
Cheng CC, Chien HC, Lee TT, Chen YC, Nguyen HU, Chen SZ, Lin YC, Suenaga K, Shen CH, Chueh YL, Lin YF, Chou MY, Chiu PW.   +12 more
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Radiation design handbook for the Jupiter probe [PDF]

Hart, A. R., Price, M. L., Raymond, J. P., Vanlint, V. A. J.   +3 more
core   +1 more source

Optimizing the crystallinity of ZrO₂ gate insulator in indium gallium zinc oxide thin-film transistors through atomic layer deposition process temperature control. [PDF]

Sci Rep
Jeong H, Yoo SM, Choe M, Baek IH, Jeon W.   +4 more
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A Dynamic Physics-Guided Ensemble Model for Non-Intrusive Bond Wire Health Monitoring in IGBTs. [PDF]

Micromachines (Basel)
Yang X, Hu Z, Bo Y, Shi T, Cui M.
europepmc   +1 more source

Breath-based lung cancer detection using an ML-driven low-cost sensor array. [PDF]

Sci Rep
Iyer D, Gobinath K, Kowkuntla K, Wanjari VV, Banumurthy G.   +4 more
europepmc   +1 more source

Reliability of semiconductor devices

Electronics and Power, 1972

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Elements of semiconductor-device reliability

Proceedings of the IEEE, 1974
Semiconductor-device quality and reliability are discussed in the context of the major factors producing failures, the relationship of process technology and its control to device quality and reliability, the testing procedures used to determine quality levels, and screening procedures that can be employed to segregate certain levels of device quality.
C.G. Peattie, J.D. Adams, S.L. Carrell, T.D. George, M.H. Valek   +4 more
openaire   +1 more source

Reliability of compound semiconductor devices

Microelectronics Reliability, 1992
Abstract This paper reviews the reliability of III–V semiconductor devices with particular attention to the failure mechanisms typical of these structures. Instability effects at the surface of various FETs have been examined and the problems related to the metallurgies employed.
FANTINI, Fausto, F. MAGISTRALI
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Reliability of compound semiconductor devices

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400), 2002
This paper reviews the reliability problems of compound semiconductor devices. These devices suffer from specific failure mechanisms, which are related to their limited maturity. Only the GaAs MESFETs exhibit a stable technology and an assessed reliability. The metallizations employed in HEMTs already benefit from this assessment.
F. Fantini, L. Cattani, D. Dieci
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Semiconductor device reliability vs process quality

Microelectronics Reliability, 1992
Abstract This paper describes a method for defining a quantitative model relating “quality” expressed in terms of parameter distributions and “reliability” expressed in terms of failure rates. This model makes it possible to generate a more realistic failure rate estimate for semiconductor devices.
Riko Radojcic, Paul Giotta
openaire   +1 more source