Results 121 to 130 of about 570,799 (322)
Structure–Transport–Ion Retention Coupling for Enhanced Nonvolatile Artificial Synapses
Advanced Functional Materials, EarlyView.Nitrogen incorporation into the conjugated backbone of donor–acceptor polymers enables efficient charge transfer and deep ion embedding in organic electrochemical synaptic transistors (OESTs). This molecular‐level design enhances non‐volatile synaptic properties, providing a new strategy for developing high‐performance and reliable neuromorphic devices.
Donghwa Lee +5 more
wiley +1 more source
Rational Device Design and Doping‐Controlled Performance in Fast‐Response π‐Ion Gel Transistors
Advanced Functional Materials, EarlyView.π‐Ion gel transistors (PIGTs) achieve extraordinary transconductance and stability through device configuration optimization, high‐mobility conjugated polymer selection, and hole scavenger doping. The optimized PIGTs maintain performance on flexible substrates, enabling printed, fast‐response, and wearable electronics.
Masato Kato +10 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Circular photogalvanic effect measurements and first‐principles calculations reveal spin‐splitting states in solution‐processed bournonite films (CuPbSbS3) due to structural and bulk inversion asymmetry. The results provide experimental confirmation of coexisting Rashba and Dresselhaus spin‐splitting states in this non‐centrosymmetric chalcogenide ...
Aeron McConnell +5 more
wiley +1 more source
Results in PhysicsThis paper presents a structure for designing Junction Termination Extension (JTE) in Silicon Carbide (SiC) power devices, particularly for Schottky Barrier Diodes (SBD).
Xinyu Wang +11 more
doaj +1 more source
II-VI Wide-Bandgap Semiconductor Device Technology: Stability and Oxidation
, 2023 Ghenadii Korotcenkov
openalex +2 more sources
Advanced Functional Materials, EarlyView.An efficient NiOx HTL is successfully prepared by introducing MXene as an additive without further surface modification to fabricate high‐performance FASn0.5Pb0.5I3 perovskite solar cells. The introduction of MXene contributes to improved conductivity of NiOx, better aligned at NiOx/perovskite interfaces, and enhanced quality of perovskite films ...
Lijun Chen +12 more
wiley +1 more source
Adsorbate Structure on Reconstructed Semiconductors: Te and I on Si {111} 7×7 and Ge{111}2×8. [PDF]
, 1982 P. H. Citrin, P. Eisenberger, J. E. Rowe
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Toughening β‐Ga2O3 via Mechanically Seeded Dislocations
Advanced Functional Materials, EarlyView.β‐Ga2O3 is promising for next‐generation semiconductors but its brittleness limits flexible and high‐precision applications. Here, mechanically seeded dislocations introduced by surface deformation improved damage tolerance in (001) β‐Ga2O3. Nanoindentation and characterization show dislocations suppress cleavage cracks by enabling stable plastic ...
Zanlin Cheng +5 more
wiley +1 more source
Proceedings of the International Conference on Narrow-Gap Semiconductors and Related Materials, Gaithersbury, Maryland, 12-15 June 1989 [PDF]
, 1990 openalex +1 more source