Results 41 to 50 of about 570,799 (322)
, 2017 Due to the lack of two-dimensional silicon-based semiconductors and the fact that most of the components and devices are generated on single-crystal silicon or silicon-based substrates in modern industry, designing two-dimensional silicon-based ...
Deng, Kaiming +3 more
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Analysis of power converters with devices of SiC for applications in electric traction systems [PDF]
, 2016 This article presents the analysis of two topologies of power converters. Voltage Source Inverter (VSI) and Current Source Inverter (CSI) proposals for traction system applications, these topologies are implemented with silicon carbide devices.
Fernández Palomeque, Efrén Esteban +3 more
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Advanced Engineering Materials, Volume 27, Issue 6, March 2025.ErB4 and NdB4 nanostructured powders are produced by mechanochemical synthesis. 5 h mechanical alloying and 4 M HCl acid leaching are used in the production. ErB4 and NdB4 powders exhibit maximum magnetization of 0.4726 emu g−1 accompanied with an antiferromagnetic‐to‐paramagnetic phase transition at about TN = 18 K and 0.132 emu g−1 with a maximum at ...
Burçak Boztemur +5 more
wiley +1 more source
Tuning the Surface Morphologies and Properties of ZnO Films by the Design of Interfacial Layer
Nanoscale Research Letters, 2017 Wurtzite ZnO films were grown on MgO(111) substrates by plasma-assisted molecular beam epitaxy (MBE). Different initial growth conditions were designed to monitor the film quality.
Yaping Li +9 more
doaj +1 more source
Small, 2020 AbstractThe spin‐gapless semiconductors (SGSs) are a new class of zero‐gap materials which have fully spin polarized electrons and holes. They bridge the zero‐gap materials and the half‐metals. The band structures of the SGSs can have two types of energy dispersion: Dirac linear dispersion and parabolic dispersion.
Zengji Yue +3 more
openaire +5 more sources
Hall effect and magnetoresistance in p-type ferromagnetic semiconductors
, 2003 Recent works aiming at understanding magnetotransport phenomena in ferromagnetic III-V and II-VI semiconductors are described. Theory of the anomalous Hall effect in p-type magnetic semiconductors is discussed, and the relative role of side-jump and skew-
Cibert, Joel +4 more
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Theoretical study of interacting hole gas in p-doped bulk III-V semiconductors [PDF]
, 2006 We study the homogeneous interacting hole gas in $p$-doped bulk III-V semiconductors. The structure of the valence band is modelled by Luttinger's Hamiltonian in the spherical approximation, giving rise to heavy and light hole dispersion branches, and ...
E. I. Rashba +7 more
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Advanced Engineering Materials, EarlyView.This article demonstrates the successful qualification of a copper–tungsten composite for laser powder bed fusion. The resulting components exhibited high density, high thermal conductivity, and reduced thermal expansion. Heat sinks with complex geometries were successfully manufactured, clearly showcasing the material's potential for additive ...
Simon Rauh +6 more
wiley +1 more source
, 1998 Free carrier capture by a screened Coulomb potential in semiconductors are considered. It is established that with decreasing screening radius the capture cross section decreases drastically, and it goes to zero when $% r_s=a_B^{*}$. On the basis of this
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Advanced Engineering Materials, EarlyView.Carbon nanomaterial‐reinforced epoxy composites exhibit pronounced piezoresistive behavior, enabling intrinsic damage sensing under cyclic and fatigue loading. This review critically compares carbon nanotube and graphene systems, correlating filler content, percolation threshold, and gauge factor with sensing stability and damage evolution.
J. M. Parente +3 more
wiley +1 more source