Results 31 to 40 of about 108,870 (245)

The Precision Allergy Molecular Diagnosis (PAMD@) in Monitoring the Atopic March in a Child with a Primary Food Allergy: Case Report

Journal of Asthma and Allergy, 2022
Izabela Knyziak-Mędrzycka,1,2 Monika Szychta,3 Emilia Majsiak,4 Andrzej M Fal,2,5,6 Zbigniew Doniec,7 Bożena Cukrowska8 1Allergy Clinic, Children’s Memorial Health Institute, Warsaw, Poland; 2The Department of Allergy, Pulmonary Diseases and ...
Knyziak-Mędrzycka I, Szychta M, Majsiak E, Fal AM, Doniec Z, Cukrowska B   +5 more
doaj  

Low Levels Matter: Clinical Relevance of Low Pru p 3 sIgE in Patients With Peach Allergy

Frontiers in Allergy, 2022
Many clinical lab settings still use 0.35 KUA/L as the cut-off for serum specific-IgE (sIgE) immunoassays, while the detection limit is 0.1 KUA/L. The clinical relevance of -low-level sIgE (0.1–0.35 KUA/L) remains controversial.
Sara Balsells-Vives, Clara San Bartolomé, Clara San Bartolomé, Rocío Casas-Saucedo, Rocío Casas-Saucedo, Rocío Casas-Saucedo, María Ruano-Zaragoza, María Ruano-Zaragoza, María Ruano-Zaragoza, Josefina Rius, Maria Torradeflot, Joan Bartra, Joan Bartra, Joan Bartra, Rosa Munoz-Cano, Rosa Munoz-Cano, Rosa Munoz-Cano, Mariona Pascal, Mariona Pascal, Mariona Pascal   +19 more
doaj   +1 more source

A SiGe HEMT Mixer IC with Low Conversion Loss [PDF]

, 2003
The authors present the first SiGe HEMT mixer integrated circuit. The active mixer stage, operating up to 10GHz RF, has been designed and realized using a 0.1µ µµ µm gate length transistor technology.
Abele, P., Gruson, F., Hackbarth, T., Hieber, K.-H., Kallfass, I., Michelakis, K., Müller, J., Schumacher, H.   +7 more
core   +1 more source

Combinations of self‐reported rhinitis, conjunctivitis, and asthma predicts IgE sensitization in more than 25,000 Danes

Clinical and Translational Allergy, 2021
Background Allergic rhinitis (AR), allergic conjunctivitis (AC), and asthma composing multiple phenotypes and improved understanding of these phenotypes and their respective risk factors are needed.
Susan Mikkelsen, Khoa Manh Dinh, Jens Kjærgaard Boldsen, Ole Birger Pedersen, Gitte Juel Holst, Mikkel Steen Petersen, Kathrine Agergård Kaspersen, Bjarne Kuno Møller, Kaspar Rene Nielsen, Helene Martina Paarup, Klaus Rostgaard, Henrik Hjalgrim, Erik Sørensen, Linda Jenny Handgaard, Thomas Folkmann Hansen, Karina Banasik, Kristoffer Sølvsten Burgdorf, Henrik Ullum, Torben Sigsgaard, Christian Erikstrup   +19 more
doaj   +1 more source

Electron transport through antidot superlattices in $Si/SiGe$ heterostructures: new magnetoresistance resonances in lattices with large diameter antidots [PDF]

, 2006
In the present work we have investigated the transport properties in a number of Si/SiGe samples with square antidot lattices of different periods. In samples with lattice periods equal to 700 nm and 850 nm we have observed the conventional low-field ...
Hartmann, J. -M., Kvon, Z. D., Olshanetsky, E. B., Portal, J. -C., Renard, Vincent Thomas Francois   +4 more
core   +4 more sources

SiGe HMOSFET differential pair [PDF]

ISCAS 2001. The 2001 IEEE International Symposium on Circuits and Systems (Cat. No.01CH37196), 2002
A SiGe HMOSFET can be engineered to provide enhanced linearity in its output current-voltage characteristics. The additional linearity can he exploited in the design of more linear analogue circuits like the differential pair presented here. From the TCAD data of such a structure, the BSIM3v3 model of the transistor was extracted and simulation results
Michelakis, K, Despotopoulos, S, Badcock, SG, Papavassiliou, C, O'Neill, AG, Toumazou, C   +5 more
openaire   +3 more sources

Intrinsic Reliability improvement in Biaxially Strained SiGe p-MOSFETs

, 2010
In this letter we not only show improvement in the performance but also in the reliability of 30nm thick biaxially strained SiGe (20%Ge) channel on Si p-MOSFETs.
Bersuker, Gennadi, Bijesh, R., Deora, Shweta, Huang, Jeff, Jammy, Raj, Klimeck, Gerhard, Krisch, P. D., Paul, Abhijeet   +7 more
core   +1 more source

Etch Control and SiGe Surface Composition Modulation by Low Temperature Plasma Process for Si/SiGe Dual Channel Fin Application

IEEE Journal of the Electron Devices Society, 2019
In this study, we discuss Si-SiGe etch characteristics as well as SiGe surface composition modification. It is required to etch Si and SiGe simultaneously for Si/SiGe dual channel Fin-FETs.
Y. Ishii, Y.-J. Lee, W.-F. Wu, K. Maeda, H. Ishimura, M. Miura   +5 more
doaj   +1 more source

The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs [PDF]

, 2010
The impact of the thickness of the silicon–germanium strain-relaxed buffer (SiGe SRB) on the analog performance of strained Si nMOSFETs is investigated.
Alatise, Olayiwola M., Kwa, Kelvin S. K., O'Neill, Anthony G., Olsen, Sarah H.   +3 more
core   +1 more source

An FDTD Investigation of Compact and Low-Voltage Waveguide-Integrated Plasmonic Ge/SiGe Multiple Quantum Wells Photodetectors

IEEE Photonics Journal, 2022
We report on 3-D FDTD simulation of waveguide-integrated plasmonic Ge/SiGe MQWs photodetectors. Despite several significant works on Ge/SiGe MQW optical modulators, Ge/SiGe MQW photodetectors still show improvable performance ...
Saranisorn Srikam, Worawat Traiwattanapong, Pichet Limsuwan, Papichaya Chaisakul   +3 more
doaj   +1 more source