Results 41 to 50 of about 108,870 (245)
Monte Carlo investigation of optimal device architectures for SiGe FETs [PDF]
, 1998 Strained silicon channel FETs grown on virtual SiGe substrates show clear potential for RF applications, in a material system compatible with silicon VLSI. However, the optimisation of practical RF devices requires some care.
Asenov, A. +4 more
core +1 more source
Advanced Materials, EarlyView.AI‐Assisted Workflow for (Scanning) Transmission Electron Microscopy: From Data Analysis Automation to Materials Knowledge Unveiling. Abstract (Scanning) transmission electron microscopy ((S)TEM) has significantly advanced materials science but faces challenges in correlating precise atomic structure information with the functional properties of ...
Marc Botifoll +19 more
wiley +1 more source
Low field magnetotransport in strained Si/SiGe cavities
, 2004 Low field magnetotransport revealing signatures of ballistic transport effects in strained Si/SiGe cavities is investigated. We fabricated strained Si/SiGe cavities by confining a high mobility Si/SiGe 2DEG in a bended nanowire geometry defined by ...
Beltram, F. +8 more
core +1 more source
Influence of Outcoupling Layers on Top‐Emitting Perovskite Light‐Emitting Diodes
Advanced Optical Materials, Volume 13, Issue 8, March 13, 2025.Top‐emitting perovskite LEDs offer benefits over typical bottom‐emitting architectures, toward lasing, improved thermal management, and on‐chip fabrication compatibility. Outcoupling layers offer a strategy uniquely applicable to top‐emitting LEDs to optimize EQE by improving optical outcoupling.
James C. Loy +5 more
wiley +1 more source
Hole spin relaxation in [001] strained asymmetric Si/SiGe and Ge/SiGe quantum wells
, 2009 Hole spin relaxation in [001] strained asymmetric Si/Si$_{0.7}$Ge$_{0.3}$ (Ge/Si$_{0.3}$Ge$_{0.7}$) quantum wells is investigated in the situation with only the lowest hole subband being relevant.
D. D. Awschalom +14 more
core +1 more source
Electroluminescence and Franz–Keldysh Modulation Observed in Sn/Ge Multi‐Quantum Wells
Advanced Optical Materials, EarlyView.We investigate the optoelectronic properties of PIN diodes based on ultrathin α‐Sn/Ge multiple quantum film structures, fabricated by molecular beam epitaxy, both experimentally and theoretically. The samples exhibit a light emission spectrum in the short‐wavelength infrared range with two transitions. Furthermore, when operating as a photodetector, we
Michael Oehme +9 more
wiley +1 more source
Coordination and Conflict: The Persistent Relevance of Networks in International Financial Regulation [PDF]
, 2015 This thesis presents SiGe(C)/Si(C) multi quantum well (MQW) layers individually or in combination with Si(C) Schottky diodes as material structures to detect infrared (IR) radiation.
Ahdieh, Robert B.
core +1 more source
Non‐Equilibrium Synthesis Methods to Create Metastable and High‐Entropy Nanomaterials
Advanced Science, EarlyView.ABSTRACT Stabilizing multiple elements within a single phase enables the creation of advanced materials with exceptional properties arising from their complex composition. However, under equilibrium conditions, the Hume–Rothery rules impose strict limitations on solid‐state miscibility, restricting combinations of elements with mismatched crystal ...
Shuo Liu +3 more
wiley +1 more source
Decoherence of electron spin qubits in Si-based quantum computers
, 2002 Direct phonon spin-lattice relaxation of an electron qubit bound by a donor impurity or quantum dot in SiGe heterostructures is investigated. The aim is to evaluate the importance of decoherence from this mechanism in several important solid-state ...
B. Kane +23 more
core +1 more source
Characteristics of SiGe Thin Film Resistors in SiGe ICs [PDF]
Journal of the Korean Vacuum Society, 2007 SiGe integrated circuits are being used in the field of high-speed wire/wireless communications and microwave systems due to the RF/high-speed analog characteristics and the easiness in the fabrication. Reducing the resistance variation in SiGe thin film resistors results in enhancing the reliability of integrated circuits.
Sang-Heung Lee +2 more
openaire +1 more source