Results 41 to 50 of about 1,006,667 (349)

Coherent Control of Nitrogen-Vacancy Center Spins in Silicon Carbide at Room Temperature. [PDF]

Physical Review Letters, 2019
Solid-state color centers with manipulatable spin qubits and telecom-ranged fluorescence are ideal platforms for quantum communications and distributed quantum computations.
Jun-Feng Wang, Fei-Fei Yan, Qiang Li, Zhenghao Liu, He Liu, G. Guo, Liping Guo, Xiong Zhou, Jinming Cui, Jian Wang, Zong-Quan Zhou, Xiao-Ye Xu, Jin-Shi Xu, Chuan‐Feng Li, G. Guo   +14 more
semanticscholar   +1 more source

Developing silicon carbide for quantum spintronics

, 2020
In current long-distance communications, classical information carried by large numbers of particles is intrinsically robust to some transmission losses but can, therefore, be eavesdropped without notice.
N. T. Son, Christopher P. Anderson, A. Bourassa, K. Miao, Charles Babin, M. Widmann, Matthias Niethammer, J. Ul Hassan, N. Morioka, I. Ivanov, F. Kaiser, J. Wrachtrup, D. Awschalom   +12 more
semanticscholar   +1 more source

Two-Dimensional Silicon Carbide: Emerging Direct Band Gap Semiconductor

Nanomaterials, 2020
As a direct wide bandgap semiconducting material, two-dimensional, 2D, silicon carbide has the potential to bring revolutionary advances into optoelectronic and electronic devices.
Sakineh Chabi, Kushal Kadel
semanticscholar   +1 more source

Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

Advanced Functional Materials, EarlyView.
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai, Md Shakhawath Hossain, Nhat Minh Nguyen, Yongliang Chen, Chaohao Chen, Xiaoxue Xu, Quang Thang Trinh, Toan Dinh, Toan Trong Tran   +8 more
wiley   +1 more source

Electronic properties of ZrO2 films fabricated via atomic layer deposition on 4H-SiC and Si substrates

Materials Research Express
Being an important semiconductor material for high power applications, silicon carbide (SiC) faces the problems while used as a gate oxygen layer in traditional Si MOS devices.
Xi-Rui Wang, Yu-Xuan Zeng, Jie Zhang, Wei Huang, Hong-Ping Ma, Qing-Chun Zhang   +5 more
doaj   +1 more source

Morphological Studies on CNT Reinforced SiC/SiOC Composites

Eurasian Chemico-Technological Journal, 2011
Carbon nanotubes (CNTs) have been grown on commercially available silicon carbide (SiC) fabric by the catalytic chemical vapour deposition (CCVD) technique.
L. M. Manocha, A. Basak, S. Manocha, A. Darji   +3 more
doaj   +1 more source

Study on the Surface Morphology of Micro-Particles and the Oxide Layer on Silicon Carbide Crystal Using Nanosecond Green Laser Cleaning Assisted with Airflow

Crystals, 2022
With a focus on the particle pollutants on the surface of silicon carbide crystal materials, this paper establishes a laser cleaning model for the fine particles found in silicon carbide crystal materials and proposes a new nanosecond green laser ...
Haibing Xiao, Chenlin Du, Songling Zhang, Yixin Zhu   +3 more
doaj   +1 more source

Defect Analysis of the β– to γ–Ga2O3 Phase Transition

Advanced Functional Materials, EarlyView.
The role of defects at all the relevant stages of the β$\beta$‐ to γ$\gamma$‐Ga2O3 polymorph transition is investigated using a multi method approach. The positron annihilation spectroscopy based results show that the defect density decreases after the transition, and that changes in defect configuration within the γ phase occur with increasing ...
Umutcan Bektas, Maciej O. Liedke, Huan Liu, Fabian Ganss, Maik Butterling, Nico Klingner, René Hübner, Ilja Makkonen, Andreas Wagner, Gregor Hlawacek   +9 more
wiley   +1 more source

Application of Silicon Carbide Power Devices in Rail Transit

机车电传动, 2020
In order to solve the lightweight problems of rail traffic traction and auxiliary systems, the applications of wide-bandgap semiconductor devices such as silicon carbide devices are increasing rapidly.
Xuan ZHAO, Dong JIANG, Zicheng LIU, Yingtao MA, Jiangfeng WANG   +4 more
doaj  

Research on the Processing of Microstructures on Silicon Carbide Surfaces Using a Blowing-Assisted Nanosecond Laser

Applied Sciences, 2022
The properties of high strength, wear resistance, and high brittleness, make silicon carbide (SiC) materials difficult to process by traditional processing methods.
Suorong Zhang, Jian Li, Bin He, Jian Yuan, Guoyan Chen   +4 more
doaj   +1 more source