Results 81 to 90 of about 187,538 (302)
Bacteria‐Responsive Nanostructured Drug Delivery Systems for Targeted Antimicrobial Therapy
Advanced Materials, EarlyView.Bacteria‐responsive nanocarriers are designed to release antimicrobials only in the presence of infection‐specific cues. This selective activation ensures drug release precisely at the site of infection, avoiding premature or indiscriminate release, and enhancing efficacy.
Guillermo Landa +3 more
wiley +1 more source
Insulated-gate field-effect transistor strain sensor [PDF]
, 1972 Strain sensors that can be switched on and off were fabricated from p-channel IGFET on thin filament n-type silicon crystals with silicon dioxide layer sputtered over transistor for passivation.
Gross, C.
core +1 more source
Plasmonic Enhancement of Emission from Si-nanocrystals
, 2008 Plasmonic gratings of different periodicities are fabricated on top of Silicon nanocrystals embedded in Silicon Dioxide. Purcell enhancements of up to 2 were observed, which matches the value from simulations.
Jelena Vučković +5 more
core +3 more sources
Advanced Materials Interfaces, EarlyView.This study demonstrates ultrafast photocatalytic wettability switching in TiO2 thin films by tailoring substrate doping and interface oxides. Enhanced switching rates and hemiwicking effects are achieved through optimized material stacks and nanostructuring.
Rucha A. Deshpande +6 more
wiley +1 more source
The influence of initial defects on mechanical stress and deformation distribution in oxidized silicon [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2008 The near-surface silicon layers in silicon – dioxide silicon systems with modern methods of research are investigated. It is shown that these layers have compound structure and their parameters depend on oxidation and initial silicon parameters.
Kulinich O. A. +4 more
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Powder containing 2H-type silicon carbide produced by reacting silicon dioxide and carbon powder in nitrogen atmosphere in the presence of aluminum [PDF]
The production of powder which contains silicon carbide consisting of 40% of 2H-type silicon carbide, beta type silicon carbide and less than 3% of nitrogen is discussed.
Kuramoto, N., Takiguchi, H.
core +1 more source
Full 3D Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs
, 2011 The influence of interface roughness scattering (IRS) on the performances of silicon nanowire field-effect transistors (NWFETs) is numerically investigated using a full 3D quantum transport simulator based on the atomistic sp3d5s* tight-binding model ...
Boykin, Timothy B. +4 more
core +1 more source
Advanced Materials Interfaces, EarlyView.Sputtered WS2 films were investigated in terms of their S‐ and O‐concentration depending on deposition power and pre‐sputter time. Chemical and structural investigations were done using EDS, TEM, SEM, AFM, XRD. In general, 20 W films exhibit a wide variation in stoichiometry and structure whereas 80 W films demonstrate a higher S/W ratio than 20 W ...
Theresa Scheler +4 more
wiley +1 more source
Process facilitates photoresist mask alignment on SiC crystals [PDF]
, 1967 Growth of silicon dioxide on a silicon carbide crystal ensures proper orientation of photoresist masks on the crystals used for semiconductor devices.
Formigoni, N. P., Roberts, J. S.
core +1 more source
Pulsed DC Sputter Deposition of Stable Turbostratic Boron Nitride Thin Films
Advanced Materials Interfaces, EarlyView.Boron nitride (BN) films are deposited by sputtering from a boron target. During deposition, a substrate bias voltage is applied between the plasma and the sample, which reduces excess boron in the film and enhances the crystallinity. This process prevents the formation of boric acid and ammonium borate hydrate.
Josef Schätz +9 more
wiley +1 more source