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Desorption/Ionization on Silicon Nanowires
Analytical Chemistry, 2005Dense arrays of single-crystal silicon nanowires (SiNWs) have been used as a platform for laser desorption/ionization mass spectrometry of small molecules, peptides, protein digests, and endogenous and xenobiotic metabolites in biofluids. Sensitivity down to the attomole level has been achieved on the nanowire surfaces by optimizing laser energy ...
E P, Go +9 more
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Bicrystalline Silicon Nanowires
Advanced Materials, 2001A. H. Carim, K.-K. Lew, J. M. Redwing
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Reconfigurable Silicon Nanowire Transistors
Nano Letters, 2011Over the past 30 years electronic applications have been dominated by complementary metal oxide semiconductor (CMOS) devices. These combine p- and n-type field effect transistors (FETs) to reduce static power consumption. However, CMOS transistors are limited to static electrical functions, i.e., electrical characteristics that cannot be changed.
André, Heinzig +4 more
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Silicidation of Silicon Nanowires by Platinum
Nano Letters, 2007The solid-state reaction between platinum and silicon nanowires grown by the vapor-liquid-solid technique was studied. The reaction product PtSi is an attractive candidate for contacts to p-type silicon nanowires due to the low barrier height of PtSi contacts to p-type Si in the planar geometry, and the formation of PtSi was the motivation for our ...
Bangzhi, Liu +4 more
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Nanodevices Based on Silicon Nanowires
Recent Patents on Nanotechnology, 2009Silicon nanowires (SiNWs) have been demonstrated as one of the promising building blocks for future nanodevices such as field effect transistors, solar cells, sensors and lithium battery; much progress has been made in this field during last decades.
Yuting, Wan +5 more
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Chemistry and physics of silicon nanowire
Dalton Transactions, 2008This article provides a short overview of the current status of the silicon nanowire research including its synthetic chemistry and physical property characterization, with examples drawn mainly from the author's lab.
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Reversible Electrowetting on Superhydrophobic Silicon Nanowires
Nano Letters, 2007This paper reports for the first time on the reversible electrowetting of liquid droplets in air and oil environments on superhydrophobic silicon nanowires (SiNWs). The silicon nanowires were grown on Si/SiO2 substrates using the vapor-liquid-solid (VLS) mechanism, electrically insulated using 300 nm SiO2, and hydrophobized by coating with a ...
Verplanck, N. +5 more
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Fabrication of silicon nanowires
Applied Physics A: Materials Science & Processing, 1998at 750 °C and 850 °C. The oxide and interface morphology are characterized by cross-sectional scanning electron microscope images. It is found that the oxidized nanowire following oxidation at 750 °C still keeps its pentagon shape even if it has been oxidized for 19 h. However, the oxidized samples at 850 °C become circular in shape.
J.L. Liu +6 more
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Synthesis of silicon nanowires
2004 IEEE International Conference on Semiconductor Electronics, 2004The synthesis of silicon nanowires is described in this paper. Using self-assembly approach, nanowires were grown by annealing of gold-coated silicon substrate to temperature about 1000 C in nitrogen ambient. Si nanowires formed upon cooling of the melted Au-Si alloy by the N/sub 2/ gas.
null Wong Yuen Yee +3 more
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