Results 251 to 260 of about 61,999 (296)
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Nanowire Lithography on Silicon
Nano Letters, 2008Nanowire lithography (NWL) uses nanowires (NWs), grown and assembled by chemical methods, as etch masks to transfer their one-dimensional morphology to an underlying substrate. Here, we show that SiO2 NWs are a simple and compatible system to implement NWL on crystalline silicon and fabricate a wide range of architectures and devices.
Alan, Colli +6 more
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Nano Letters, 2012
We report on the fabrication and characterization of silicon nanowire tunnel diodes. The silicon nanowires were grown on p-type Si substrates using Au-catalyzed vapor-liquid-solid growth and in situ n-type doping. Electrical measurements reveal Esaki diode characteristics with peak current densities of 3.6 kA/cm(2), peak-to-valley current ratios of up ...
Heinz, Schmid +4 more
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We report on the fabrication and characterization of silicon nanowire tunnel diodes. The silicon nanowires were grown on p-type Si substrates using Au-catalyzed vapor-liquid-solid growth and in situ n-type doping. Electrical measurements reveal Esaki diode characteristics with peak current densities of 3.6 kA/cm(2), peak-to-valley current ratios of up ...
Heinz, Schmid +4 more
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ECS Meeting Abstracts, 2009
Abstract not Available.
Jang W. Choi, James McDonough, Yi Cui
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Abstract not Available.
Jang W. Choi, James McDonough, Yi Cui
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2020
Silicon Carbide nanowires are studied for the interesting properties of the material coupled with the unique features of quasi-one-dimensional nanostructures. The bulk synthesis of silicon carbide has been gaining increasing attention not only for the mechanical uses of the material, but also for the electronic properties.
Marco Negri +3 more
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Silicon Carbide nanowires are studied for the interesting properties of the material coupled with the unique features of quasi-one-dimensional nanostructures. The bulk synthesis of silicon carbide has been gaining increasing attention not only for the mechanical uses of the material, but also for the electronic properties.
Marco Negri +3 more
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Silicon nanowire photovoltaics
2008 33rd IEEE Photovolatic Specialists Conference, 2008Arrays of hundreds of parallel silicon nanowire p-n junction diodes, 20 nm in diameter and separated from each other by 14 nm, were fabricated using a variant of nanoimprint lithography. Bulk film diodes were also fabricated adjacent to the arrays as controls. Dark I–V curves from the nanowire arrays and bulk films suggest that performance is currently
D. Tham, J. R. Heath
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Microelectronics International, 2014
Purpose– The purpose of this study is to present reports on fabrication of silicon (Si) nanowires (NWs). The study consists of microwire formation on silicon-on-insulator (SOI) that was fabricated using a top-down approach which involved conventional photolithography coupled with shallow anisotropic etching.Design/methodology/approach– A 5-inch p-type ...
U. Hashim, Tijjani Adam
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Purpose– The purpose of this study is to present reports on fabrication of silicon (Si) nanowires (NWs). The study consists of microwire formation on silicon-on-insulator (SOI) that was fabricated using a top-down approach which involved conventional photolithography coupled with shallow anisotropic etching.Design/methodology/approach– A 5-inch p-type ...
U. Hashim, Tijjani Adam
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Electric‐Driven Rotation of Silicon Nanowires and Silicon Nanowire Motors
Advanced Functional Materials, 2014In this work, the first highly controllable assembly and rotation of silicon nanowires and nanomotors in suspension are reported. Si and Si composite nanowires are fabricated with precisely controlled dimensions via colloidal assisted catalytic etching. The nanowires can be rotated with deterministic speed and chirality.
Xiaobin Xu +3 more
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Desorption/Ionization on Silicon Nanowires
Analytical Chemistry, 2005Dense arrays of single-crystal silicon nanowires (SiNWs) have been used as a platform for laser desorption/ionization mass spectrometry of small molecules, peptides, protein digests, and endogenous and xenobiotic metabolites in biofluids. Sensitivity down to the attomole level has been achieved on the nanowire surfaces by optimizing laser energy ...
E P, Go +9 more
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2003
Since the discovery of carbon nanotubes by lijima [1] in 1991, one-dimensional (1D) nanomaterials including tubes, wires, cables and ribbons have attracted an explosive interest. A great deal of work has been done on exploring the various fundamental properties and potential applications of carbon nanotubes [2–6].
S. T. Lee, R. Q. Zhang, Y. Lifshitz
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Since the discovery of carbon nanotubes by lijima [1] in 1991, one-dimensional (1D) nanomaterials including tubes, wires, cables and ribbons have attracted an explosive interest. A great deal of work has been done on exploring the various fundamental properties and potential applications of carbon nanotubes [2–6].
S. T. Lee, R. Q. Zhang, Y. Lifshitz
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Pristine Semiconducting [110] Silicon Nanowires
Nano Letters, 2005We report results of ab initio calculations on silicon nanowires oriented along the [110] direction and show for the first time that these pristine silicon nanowires are indirect band gap semiconductors. The nanowires have bulk Si core and are bounded by two (100) and two (110) planes in lateral directions. The (100) planes are atomically reconstructed
Abhishek Kumar, Singh +3 more
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