Results 141 to 150 of about 100,297 (354)

Silicon Nitride-on-Insulator Photonics Polarisation Convertor

Приборы и методы измерений
Photonic integrated circuits constitute a vital component of contemporary telecommunications systems, facilitating traffic management and reducing energy consumption.
D. M. Mokhovikov, E. S. Barbin, T. G. Nesterenko, A. A. Talovskaya, A. S. Myrzakhmetov, I. V. Kulinich, P. F. Baranov, D. P. Il’yaschenko   +7 more
doaj   +1 more source

Silicon-on-Insulator Optical Waveguide Pressure Sensor Based on Mach-Zehnder Interferometer. [PDF]

Micromachines (Basel), 2022
Li C, Zhang C, Yang L, Guo F.
europepmc   +1 more source

A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors

, 2009
M. Cassé, F. Rochette, L. Thévenod, Neïla Bhouri, F. Andrieu, G. Reimbold, F. Boulanger, M. Mouis, G. Ghibaudo, D. K. Maude   +9 more
openalex   +2 more sources

Effect of Ge Diffusion on AlxGa1-xN/GaN High Electron Mobility Transistors on a Thin Silicon-On-Insulator [PDF]

, 2013
L. K. Bera, W. H. Tham, R. S. Kajen, S. B. Dolmanan, M. K. Kumar, Vivian Kaixin Lin, D. S. Ang, Thirumaleshwara N. Bhat, N.L. Yakovlev, S. Tripathy   +9 more
openalex   +1 more source

Universal and Nondestructive Direct Photolithography of Colloidal Quantum Dots Using Photocrosslinkable Polymer Blends

Advanced Functional Materials, EarlyView.
A universal and nondestructive direct photolithography method enables high‐resolution quantum dot (QD) patterning without ligand exchange. By blending QDs with a photocrosslinkable polymer, this approach preserves the optical properties and enhances the QD‐LED efficiency and lifetime.
Jaeyeop Lee, Seon Lee Kwak, Chaegwang Lim, Hyeonjun Lee, Woon Ho Jung, Byong Jae Kim, Jisu Han, Kyoungeun Lee, Yeyun Bae, Jiyoon Oh, Hyoungjun Kim, Keon Woo Kim, Byeong Guk Jeong, Jaehoon Lim, Do‐Hoon Hwang, Jeongkyun Roh   +15 more
wiley   +1 more source

Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel

Micromachines
The continuous scaling down of MOSFETs is one of the present trends in semiconductor devices to increase device performance. Nevertheless, with scaling down beyond 22 nm technology, the performance of even the newer nanodevices with multi-gate ...
Potaraju Yugender, Rudra Sankar Dhar, Swagat Nanda, Kuleen Kumar, Pandurengan Sakthivel, Arun Thirumurugan   +5 more
doaj   +1 more source

Mono- and Bilayer Graphene/Silicon Photodetectors Based on Optical Microcavities Formed by Metallic and Double Silicon-on-Insulator Reflectors: A Theoretical Investigation. [PDF]

Micromachines (Basel), 2023
Crisci T, Moretti L, Gioffrè M, Casalino M.   +3 more
europepmc   +1 more source

Electron beam induced damage in PECVD Si3N4 and SiO2 films on InP [PDF]

Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron beam irradiation in the 5 to 40 keV range for the purpose of ...
Dickman, John E., Kapoor, Vik J., Pantic, Dragan M., Williams, Wallace D., Young, Paul G.   +4 more
core   +1 more source

Multimodal Structural Color Graphics Based on Colloidal Photonic Microdome Arrays

Advanced Functional Materials, EarlyView.
A hybrid photonic system combining colloidal crystals and microscale domes is designed to achieve four switchable optical states via the interplay of Bragg reflection and TIR interference. The graphics composed of the photonic microdome arrays provide tunable, angle‐sensitive structural coloration and concealed‐to‐revealed transitions, offering a ...
Jun‐Gu Kang, Hwan‐Young Lee, Chaerim Son, Hyeonbin Jo, Shin‐Hyun Kim   +4 more
wiley   +1 more source

Ultra-broadband on-chip beam focusing enabled by GRIN metalens on silicon-on-insulator platform. [PDF]

Nanophotonics, 2022
Shen J, Zhang Y, Dong Y, Xu Z, Xu J, Quan X, Zou X, Su Y.   +7 more
europepmc   +1 more source