Optical switching in metal tunnel-insulator n–p+ silicon devices [PDF]
, 1979 S. Moustakas +4 more
openalex +1 more source
Italian National Conference on Sensors, 2015 A ratiometric wavelength measurement based on a Silicon-on-Insulator (SOI) integrated device is proposed and designed, which consists of directional couplers acting as two edge filters with opposite spectral responses.
Pengfei Wang +5 more
semanticscholar +1 more source
Tin‐Based 2D/3D Perovskite Vertical Heterojunction for High‐Performance Synaptic Phototransistors
Advanced Functional Materials, EarlyView.Phototransistors based on tin‐based 2D/3D perovskite heterostructures show an ultrahigh responsivity and detectivity at a low gate voltage across a broad wavelength region from ultraviolet to near‐infrared. The devices can replicate neuromorphic learning and remembering behaviors to light stimuli, in addition to electric depression and memory erasure ...
Hok‐Leung Loi +10 more
wiley +1 more source
Nondestructive characterization of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry [PDF]
, 1989 M. Fried +7 more
openalex +1 more source
Biofilm Control by Active Topography with Mucin Coating
Advanced Functional Materials, EarlyView.This study reports a new antifouling strategy based on a bioinspired design. Mucin coating enhances biofilm control by active topography with beating micron‐sized pillars. Besides the mechanical force of beating pillars, the antibiofilm activities also involve biological factors since mucin coating inhibits swarming motility and c‐di‐GMP synthesis in ...
Zehui Han +4 more
wiley +1 more source
Half-metallic silicon nanowires [PDF]
arXiv, 2007 From first-principles calculations, we predict that transition metal (TM) atom doped silicon nanowires have a half-metallic ground state. They are insulators for one spin-direction, but show metallic properties for the opposite spin direction. At high coverage of TM atoms, ferromagnetic silicon nanowires become metallic for both spin-directions with ...
arxiv
Lateral Tunnel Epitaxy of GaAs in Lithographically Defined Cavities on 220 nm Silicon-on-Insulator. [PDF]
Cryst Growth Des, 2023 Yan Z +7 more
europepmc +1 more source
Profiling of inhomogeneous carrier transport properties with the influence of temperature in silicon-on-insulator films formed by oxygen implantation [PDF]
, 1986 S. Cristoloveanu +5 more
openalex +1 more source
A variable delay integrated receiver for differential phase-shift keying optical transmission systems [PDF]
, 2012 An integrated variable delay receiver for DPSK optical transmission systems is presented. The device is realized in silicon-on-insulator technology and can be used to detect DPSK signals at any bit-rates between 10 and 15 Gbit ...
Bassi, P +9 more
core
Control of Ferromagnetism of Vanadium Oxide Thin Films by Oxidation States
Advanced Functional Materials, EarlyView.The nonstoichiometric VOx exhibits a distinct ferromagnetic hysteresis loop and demonstrates a high magnetic susceptibility (χ=dMdH$ = \frac{{dM}}{{dH}}\;$∼10). Micromagnetic simulations show the results of the “partial volume fraction ferromagnetic phase model” for VOx/Co/Pt structure.
Kwonjin Park +9 more
wiley +1 more source