Results 41 to 50 of about 100,297 (354)

Silicon-on-insulator microring resonators for photonic biosensing applications [PDF]

, 2013
Silicon-on-insulator microring resonators have proven to be an excellent platform for label-free nanophotonic biosensors. The high index contrast of the silicon-on-insulator waveguides allows for fabrication of micrometer size sensors.
Bienstman, Peter, Dubruel, Peter, Goes, Arne, Werquin, Sam   +3 more
core   +1 more source

Electrothermally-Actuated Micromirrors with Bimorph Actuators—Bending-Type and Torsion-Type

Sensors, 2015
Three different electrothermally-actuated MEMS micromirrors with Cr/Au-Si bimorph actuators are proposed. The devices are fabricated with the SOIMUMPs process developed by MEMSCAP, Inc. (Durham, NC, USA).
Cheng-Hua Tsai, Chun-Wei Tsai, Hsu-Tang Chang, Shih-Hsiang Liu, Jui-Che Tsai   +4 more
doaj   +1 more source

Compact Gas Sensor Using Silicon-on-Insulator Loop-Terminated Mach–Zehnder Interferometer

Photonics, 2021
In this paper, we propose a compact optical gas sensor based on the widespread silicon-on-insulator (SOI) technology, operating in the near-infrared (NIR) region around the 1.55 µm wavelength.
Raghi S. El Shamy, Mohamed A. Swillam, Mohamed M. ElRayany, Alaa Sultan, Xun Li   +4 more
doaj   +1 more source

A Three-Terminal Si-Ge Avalanche Photodiode with a Breakdown Voltage of 6.8 V and a Gain Bandwidth Product of 1377 GHz

Micromachines
Silicon–germanium (Si-Ge) avalanche photodiodes (APDs), fully compatible with complementary metal–oxide–semiconductor (CMOS) processes, are critical devices for high-speed optical communication.
Chao Cheng, Jintao Xue, Xishan Yu, Jifang Mu, Binhao Wang   +4 more
doaj   +1 more source

Evanescently Coupled Rectangular Microresonators in Silicon-on-Insulator with High Q-Values: Experimental Characterization

Photonics, 2017
We report on evanescently coupled rectangular microresonators with dimensions up to 20 × 10 μm2 in silicon-on-insulator in an add-drop filter configuration.
Manuel Mendez-Astudillo, Hideaki Okayama, Hirochika Nakajima   +2 more
doaj   +1 more source

A tunable, dual mode field-effect or single electron transistor

, 2012
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology.
B. Previtali, B. Roche, B. Voisin, Fenouillet-Beranger C., M. Sanquer, M. Vinet, R. Wacquez, V. Deshpande, Weber O., X. Jehl   +9 more
core   +1 more source

Enhanced Sensitivity of Silicon-On-Insulator Surface Plasmon Interferometer With Additional Silicon Layer

IEEE Photonics Journal, 2011
It is theoretically found that by adding a thin silicon layer (35 nm) on top of our previously proposed surface plasmon interference (SPI) biosensor in silicon on insulator (SOI), a sensitivity enhancement of up to 2500 nm/refractive index units (RIUs ...
Khai Q. Le, Peter Bienstman
doaj   +1 more source

Focused-ion-beam fabricated vertical fiber couplers on silicon-on-insulator waveguides [PDF]

, 2006
We fabricated grating couplers in silicon-on-insulator waveguides with focused-ion-beam. First devices were very lossy, but by using selective etchant and a hard mask we obtained efficiencies comparable to traditional fabrication ...
Baets, Roel, Schrauwen, Jonathan, Van Thourhout, Dries   +2 more
core   +3 more sources

Effect of Gate Dielectric Material on the Electrical Properties of MoSe₂-Based Metal–Insulator–Semiconductor Field-Effect Transistor

Crystals, 2022
In this study, we fabricated metal–insulator–semiconductor field-effect transistors (MISFETs) based on nanolayered molybdenum diselenide (MoSe2) using two insulator materials, silicon dioxide (SiO2) and silicon nitride (SiN).
Abdelkader Abderrahmane, Pan-Gum Jung, Changlim Woo, Pil Ju Ko   +3 more
doaj   +1 more source

Compact, low power and low threshold electrically pumped micro disc lasers for 20Gb/s non return to zero all optical wavelength conversion [PDF]

, 2010
\u3cp\u3eUsing a 7.5μm wide InP Micro-Disc-Laser, with a very low ∼100μA threshold current, heterogeneously integrated on top of Silicon on Insulator substrate, all optical NRZ wavelength conversion at speeds up to 20Gb/s is demonstrated.\u3c/p ...
de Vries, T, Dorren, HJS, Kumar, Rajesh, Liu, L, Morthier, Geert, Raz, O, Regreny, P, Rojo-Romeo, P, Van Thourhout, Dries   +8 more
core   +1 more source