Results 31 to 40 of about 4,018 (263)

Wearable Smart Patches on Sustainable Chitosan With Reversible Microbial Growth‐Inhibitory Properties

Advanced Functional Materials, EarlyView.
ABSTRACT Chitosan, a polysaccharide upcycled from biowaste, has long promised sustainable, biocompatible, and antimicrobial films and devices, an appeal reinforced by its recent regulatory recognition, with several chitosan‐based antibacterial dressings gaining clearance through the Food and Drug Administration's 510(k) pathway.
Jacopo Nicoletti, Kubra Kocak, Andrea Michel, Enrico Cavarzerani, Ali Raza, Petr Rohzin, Nouha Loudhaief, Saimir Frroku, Nicolò Baldovin, Hazrat Bilal, Alvise Perosa, Maurizio Selva, Flavio Rizzolio, Luca Sbuelz, Sabrina Tamburini, Domenico De Fazio, Giovanni Antonio Salvatore   +16 more
wiley   +1 more source

Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications

E3S Web of Conferences, 2017
A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications.
Gammon P.M., Chan C.W., Gity F., Trajkovic T., Kilchytska V., Fan L., Pathirana V., Camuso G., Ben Ali K., Flandre D., Mawby P.A., Gardner J.W.   +11 more
doaj   +1 more source

Tensile Strength of Silicon Nanowires Batch-Fabricated into Electrostatic MEMS Testing Device

Applied Sciences, 2018
The tensile strength of a silicon nanowire (SiNW) that had been integrated into a silicon-on-insulator (SOI)-based microelectromechanical system (MEMS) device was measured using electrostatic actuation and sensing.
Toshiyuki Tsuchiya, Tetsuya Hemmi, Jun-ya Suzuki, Yoshikazu Hirai, Osamu Tabata   +4 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

Advanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi, Samuele Lavelli, Zsolt M. Kovács‐Vajna, Fabrizio Torricelli   +3 more
wiley   +1 more source

Ferroelectric HfZrO_x FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

IEEE Journal of the Electron Devices Society, 2018
Ferroelectric-Hf1-xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept.
Kuan-Ting Chen, Siang-Sheng Gu, Zheng-Ying Wang, Chun-Yu Liao, Yu-Chen Chou, Ruo-Chun Hong, Shih-Yao Chen, Hong-Yu Chen, Gao-Yu Siang, Chieh Lo, Pin-Guang Chen, M.-H. Liao, Kai-Shin Li, Shu-Tong Chang, Min-Hung Lee   +14 more
doaj   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Standard CMOS Fabrication of a Sensitive Fully Depleted Electrolyte-Insulator-Semiconductor Field Effect Transistor for Biosensor Applications

Sensors, 2009
Microfabricated semiconductor devices are becoming increasingly relevant for detection of biological and chemical components. The integration of active biological materials together with sensitive transducers offers the possibility of generating highly ...
Udi Virobnik, Daniela Ullien, Moran Horesh, Andrew Machauf, Ariel Cohen, Amihood Doron, Gil Shalev, Ilan Levy   +7 more
doaj   +1 more source

Advances in Sustainable and Wearable Textile Based Soft Robotics

Advanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas, Marzia Dulal, Sophia K. Novoselov, Victoria K. Novoselov, Kostya S. Novoselov, Shaila Afroj, Nazmul Karim   +6 more
wiley   +1 more source

INSULATED-GATE BIPOLAR TRANSISTOR FORMED IN THE BULK SILICON AND USING «SILICON ON INSULATOR» TECHNOLOGY

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019
The results of the optimization of design and technological parameters device structures insulated-gate bipolar transistor (IGBT), formed in bulk silicon and using «Silicon on Insulator» (SOI) technology are presented.
S. Ibrahim, I. Yu. Lovshenko, V. R. Stempitsky   +2 more
doaj