Results 41 to 50 of about 3,859 (261)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

INSULATED-GATE BIPOLAR TRANSISTOR FORMED IN THE BULK SILICON AND USING «SILICON ON INSULATOR» TECHNOLOGY

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019
The results of the optimization of design and technological parameters device structures insulated-gate bipolar transistor (IGBT), formed in bulk silicon and using «Silicon on Insulator» (SOI) technology are presented.
S. Ibrahim, I. Yu. Lovshenko, V. R. Stempitsky   +2 more
doaj  

Characterization of RF Noise in UTBB FD-SOI MOSFET

IEEE Journal of the Electron Devices Society, 2016
In this paper, we report the noise measurements in the RF frequency range for ultrathin body and thin buried oxide fully depleted silicon on insulator (FD-SOI) transistors.
Pragya Kushwaha, Avirup Dasgupta, Yogendra Sahu, Sourabh Khandelwal, Chenming Hu, Yogesh Singh Chauhan   +5 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Design and optimization of high-contrast gratings for multispectral VCSEL-SOI laser sources

Компьютерная оптика
In the scope of a computational experiment, high-contrast gratings (HCG) formed on a silicon-on-insulator (SOI) platform within vertical-cavity surface-emitting lasers (VCSELs) were studied for multispectral laser sources. A simulation model for spectral
I.S. Shashkin, M.I. Kondratov, A.E. Grishin , K.E. Pevchikh , S.O. Slipchenko, N.A. Pikhtin   +5 more
doaj   +1 more source

Design and Fabrication of a Photonic Integrated Circuit-based Entangled Photon Pair Source using Microring Resonators [PDF]

EPJ Web of Conferences
Photonic integrated circuits (PICs) based on silicon-on-insulator (SOI) substrates provide a lightweight, compact platform for applications in quantum optics.
ten Haaf Nienke, van der Vuurst Dave, Bakker David, Castro do Amaral Gustavo, Dalle Jacob, Schmits Ruud   +5 more
doaj   +1 more source

Robust Electrocaloric Performance Enabled by Highly‐Polar Frustrated Nanodomains in NaNbO3‐Based Ferrodistortive Relaxor

Advanced Functional Materials, EarlyView.
P4bm framework in NaNbO3‐Ba(Ti, Hf)O3 ferrodistortive relaxor entails short‐range and highly‐polar ferrodistortive orders. The abundant highly‐polar orders facilitate to increase entropy change, and robust octahedral oxygen tilt enables to impede thermal perturbations.
Feng Li, Changshun Dai, He Qi, Jiecheng Liu, Xiaoming Shi, Heng Zhou, Qiong Yang, Mingsheng Long, Lei Shan, Chunchang Wang, Jianli Wang, Zhenxiang Cheng   +11 more
wiley   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Stimulated Brillouin scattering in a non-suspended ultra-low-loss thick-SOI platform

APL Photonics
Silicon photonics, with its CMOS compatibility and high integration density, has enabled a wide range of novel applications. Harnessing stimulated Brillouin scattering (SBS), an optomechanic interaction between optical and gigahertz acoustic waves, in ...
Kaixuan Ye, Akshay Keloth, Yisbel E. Marin, Matteo Cherchi, Timo Aalto, David Marpaung   +5 more
doaj   +1 more source

Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection

Biosensors, 2018
Application of micro-Raman spectroscopy for the monitoring of quality of high-k (h-k) dielectric protective layer deposition onto the surface of a nanowire (NW) chip has been demonstrated.
Kristina A. Malsagova, Tatyana O. Pleshakova, Andrey F. Kozlov, Ivan D. Shumov, Mikhail A. Ilnitskii, Andrew V. Miakonkikh, Vladimir P. Popov, Konstantin V. Rudenko, Alexander V. Glukhov, Igor N. Kupriyanov, Nina D. Ivanova, Alexander E. Rogozhin, Alexander I. Archakov, Yuri D. Ivanov   +13 more
doaj   +1 more source