Results 21 to 30 of about 4,018 (263)

Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits

open access: yesIEEE Journal of the Electron Devices Society, 2022
Performances of high-frequency integrated circuits are directly linked to the analog and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate.
Jean-Pierre Raskin
doaj   +1 more source

Design and Analysis of a High Speed, Power Efficient 8 Bit ALU Based on SOI / SON MOSFET Technology [PDF]

open access: yesЖурнал нано- та електронної фізики, 2014
This paper shows an overall performance comparative analysis in terms of Average Power Consumption, Average Delay and Power-Delay Product for an 8 bit Arithmetic Logic Unit (ALU) using bulk MOS, Silicon-on-Insulator (SOI) and Silicon-on-Nothing (SON ...
Subhramita Basak   +2 more
doaj  

Monolithic integration of embedded III-V lasers on SOI

open access: yesLight: Science & Applications, 2023
Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility.
Wen-Qi Wei   +10 more
doaj   +1 more source

Materials‐Driven Additive Manufacturing for Electrical Machines: Qualification‐Oriented Design Beyond Geometric Freedom

open access: yesAdvanced Engineering Materials, EarlyView.
This perspective reframes additive manufacturing for electrical machines as a qualification‐limited materials and architecture design problem. It links process–structure–property–performance relationships to magnetic, conducting, dielectric, and thermal property windows, highlighting where AM can enable segmented magnetic circuits, permanent magnet ...
Dénes Fodor, Loránd Szabó
wiley   +1 more source

Investigation of Resonance Characteristics of More Than 10 000 Metal‐Coated Silicon MEMS Cantilevers Using Machine Learning

open access: yesAdvanced Engineering Materials, EarlyView.
More than 10 000 metal‐coated silicon MEMS cantilevers are fabricated and characterized to build a large‐scale experimental dataset spanning multiple vibrational modes. Machine learning algorithms are benchmarked to predict resonance frequency and quality factor, with ensemble based models achieving accuracy approaching experimental uncertainty.
Sina Zare Pakzad   +8 more
wiley   +1 more source

An Integrated Evanescent Field Sensor for the Simultaneous Measurement of Layer Refractive Index and Thickness

open access: yesSensors, 2021
A novel integrated sensor for the simultaneous measurement of layer refractive index and thickness based on evanescent fields is proposed. The theoretical limits for the accuracy of the sensor were examined for the example of a TiO2 layer.
Matthias Jäger   +5 more
doaj   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Detection of Influenza Virus Using a SOI-Nanoribbon Chip, Based on an N-Type Field-Effect Transistor

open access: yesBiosensors, 2021
The detection of influenza A virions with a nanoribbon detector (NR detector) has been demonstrated. Chips for the detector have been fabricated based on silicon-on-insulator nanoribbon structures (SOI nanoribbon chip), using a complementary metal-oxide ...
Kristina A. Malsagova   +21 more
doaj   +1 more source

Counterion Dependent Side‐Chain Relaxation Stiffens a Chemically Doped Thienothiophene Copolymer

open access: yesAdvanced Functional Materials, EarlyView.
Oxidation of a thienothiophene copolymer, p(g3TT‐T2), via different doping strategies and dopant molecules resulted in materials with similar oxidation levels and a high electrical conductivity of ≈100 S cm−1. However, mechanical properties varied significantly, with sub‐glass transition temperatures and elastic moduli spanning from –44°C to –3°C and ...
Mariavittoria Craighero   +12 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

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