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Calibration of silicon photodiodes by photoacoustics
Applied Optics, 1993We present a new approach to the calibration of silicon photodiodes that are used for light (radiometric) power measurements. We describe the photoacoustic method for the determination of internal quantum efficiency and absolute spectral response of silicon photodiodes in the photovoltaic short-circuit mode.
E, Halaska, M, Dienstbier, P, Sladký
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Spectral reflectance of silicon photodiodes
Applied Optics, 1998A precision spectrometer was used to measure the spectral reflectance of a silicon photodiode over the wavelength range from 250 to 850 nm. The results were compared with the corresponding values predicted by a model based on thin-film Fresnel formulas and the known refractive indices of silicon and silicon dioxide. The good agreement at the level of 2
A, Haapalinna, P, Kärhä, E, Ikonen
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InGaAs Photodiodes on Silicon by Heteroepitaxy
26th Optoelectronics and Communications Conference, 2021InGaAs photodiodes were realized on Si by heteroepitaxy, demonstrating low dark current density of 0.45 mA/cm2, responsivity up to 0.64 A/W and a bandwidth of 11.2 GHz at 1550 nm.
Bowen Song +4 more
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Response uniformity of silicon photodiodes
Applied Optics, 1988The response uniformity of four silicon photodiodes, previously calibrated by using the self-calibration technique, has been measured. The response nonuniformity over the sensitive surface is not a negligible source of uncertainty in this case.
J, Campos, A, Corróns, A, Pons
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1990
Abstract Low capacitance photodiodes based on the principle of the solid state drift chamber have been constructred and tested. The devices are based on a cellular design with an anode at the centre of each of five cells allowing electrons liberated by ionisation to drift up to 1 mm to the readout strip.
B.S. Avset +6 more
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Abstract Low capacitance photodiodes based on the principle of the solid state drift chamber have been constructred and tested. The devices are based on a cellular design with an anode at the centre of each of five cells allowing electrons liberated by ionisation to drift up to 1 mm to the readout strip.
B.S. Avset +6 more
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A Low-Voltage Si-Ge Avalanche Photodiode for High-Speed and Energy Efficient Silicon Photonic Links
Journal of Lightwave Technology, 2020Silicon-germanium (Si-Ge) avalanche photodiodes (APDs) have large gain bandwidth product (GBP) and low excess noise due to the low impact ionization coefficient ratio of silicon.
Binhao Wang +6 more
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IEEE Transactions on Nuclear Science, 1989
A low-capacitance photodiode based on the principle of the solid-state drift chamber has been constructed and tested. The device is based on a cellular design with an anode at the center of each of five cells, allowing electrons liberated by ionization to drift up to 1 mm to the readout strip.
B.S. Avset +6 more
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A low-capacitance photodiode based on the principle of the solid-state drift chamber has been constructed and tested. The device is based on a cellular design with an anode at the center of each of five cells, allowing electrons liberated by ionization to drift up to 1 mm to the readout strip.
B.S. Avset +6 more
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Quantum efficiency stability of silicon photodiodes
Applied Optics, 1987The stability of the quantum efficiency of inversion layer, phosphorus-diffused (n on p), and boron-diffused (p on n) photodiodes has been investigated. Unsatisfactory silicon-silicon dioxide interfaces, latent recombination centers in the diffused layers, and moisture absorption by the device were identified as possible causes of instability.
R, Korde, J, Geist
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Avalanche photodiodes on silicon photonics
Journal of Semiconductors, 2022Abstract Silicon photonics technology has drawn significant interest due to its potential for compact and high-performance photonic integrated circuits. The Ge- or III–V material-based avalanche photodiodes integrated on silicon photonics provide ideal high sensitivity optical receivers for telecommunication wavelengths. Herein, the last
Yuan Yuan +7 more
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Response of a silicon photodiode to pulsed radiation
Applied Optics, 2003Both the integrated-charge and the peak-voltage responsivity of a 1-cm2 Si photodiode optimized for the extreme ultraviolet have been measured with 532-nm-wavelength pulsed radiation. The peak power of the optical pulse is varied from 35 mW to 24 kW with a pulse width of 8.25 ns.
Robert E, Vest, Steven, Grantham
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