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Epitaxial silicon avalanche photodiode
Opto-electronics, 1974Preparation of silicon avalanche photodiodes by a planar method in epitaxial PP+ silicon slices limited charge collection to carriers generated in or close to the depletion region. Reducing the effective size of the zero-field absorption region surrounding the depletion region by this method, resulted in the output signal current of the device ...
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THE USE OF SILICON PHOTODIODES FOR RADON AND PROGENY MEASUREMENTS
Health Physics, 2001Reduced cost, high quantum efficiency and very good detection characteristics of PIN silicon photodiodes made possible their utilization for alpha particles detection. This paper presents different studies and applications of this type of detector for qualification and quantification of radon and its progeny in laboratory and in the field.
M, Voytchev +3 more
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Chromatographic System Based on Amorphous Silicon Photodiodes
2007 2nd International Workshop on Advances in Sensors and Interface, 2007In this work, we present a novel thin layer chromatography system based on fluorescence detection by means of a linear array of amorphous silicon photodiodes. The photodiodes are optically coupled to a thin layer chromatography plate to monitor, in real-time, the separation of the components of a mixture during the chromatographic run.
CAPUTO, Domenico +4 more
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Ultraviolet Photodiode fabricated from TiO2 Nanorods/p-Silicon Heterojunction
Materials letters (General ed.), 2022Betul Sekertekin +3 more
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Internal quantum efficiency modeling of silicon photodiodes
Applied Optics, 2010Results are presented for modeling of the shape of the internal quantum efficiency (IQE) versus wavelength for silicon photodiodes in the 400 nm to 900 nm wavelength range. The IQE data are based on measurements of the external quantum efficiencies of three transmission optical trap detectors using an extensive set of laser wavelengths, along with the ...
T R, Gentile +4 more
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Integration of SiON waveguides and photodiodes on silicon substrates
Applied Optics, 1992Two methods of coupling integrated optical waveguides to photodetectors are investigated. As waveguides, SiON layers were deposited by low-pressure chemical vapor deposition on a thick isolation layer of thermally grown SiO(2) on silicon substrates.
S, Wunderlich, J P, Schmidt, J, Müller
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Saturation of silicon photodiodes at high modulation frequency
Applied Optics, 1978We have used the constant-amplitude, 600-MHz beat note of a 2-mW He-Ne laser to measure the rms current delivered by silicon photodiodes at 600 MHz. We find that this current first rises with increasing radiant power, saturates, and then begins to decrease at average irradiances greater, similar 100 W cm(-2), even though the direct (or average) current
M, Young, R A, Lawton
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A silicon PIN photodiode as a photovaractor
2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716), 2004The object of this work is to test a Si PIN photodiode as a photovaractor. Impedance of the photodiode is measured in dark and under illumination. Also, the photodiode is tested as a load at the end of the cable stub. The cable stub with the photodiode performs like an optically controlled equivalent /spl lambda//4 cable.
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Excess Noise in Silicon Avalanche Photodiodes
2006The mean avalanche gain and the excess noise factor are important parameters characterizing the performance of an Avalanche Photodiode. These parameters vary with electric field strength and the position of the primary electron-hole pairs generated in the APD depletion layer. In the present paper, the mean avalanche gain and the excess noise properties
Kocak, FATMA, Tapan, I.
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Ultraviolet stability of silicon photodiodes
Metrologia, 1998The ultraviolet (UV) instability of silicon photodiodes is a very complex phenomenon. The change in spectral responsivity after UV exposure can depend on the level of irradiance and total radiant exposure, duration of exposure, wavelength of the UV radiation, the type of photodiode, and the way the photodiode was stored and used before UV exposure. For
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