Results 231 to 240 of about 908,384 (292)
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Diffusers in silicon-photodiode radiometers
Applied Optics, 1982The problems encountered when making radiometric measurements with silicon-photodiode radiometers not incorporating diffusers are discussed, with special attention given to the case where laser beams are involved. A diffuserless radiometer head design is presented which eliminates most of these problems.
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Integrated optical silicon photodiode array
IEEE Journal of Quantum Electronics, 1975We consider device design, fabrication, and operation of integrated optical photodiode arrays in which p-i-n junction photodiodes are formed in silicon. A SiO(2) layer on silicon serves as the effective substrate for a KPR waveguide. Light is coupled from the waveguide at the detector region either through the evanescent field or by multiple refraction
J T, Boyd, C L, Chen
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Silicon Nitride Waveguide-Integrated Silicon Photodiodes for Blue Light
Conference on Lasers and Electro-Optics, 2021We demonstrate silicon nitride waveguide-integrated silicon lateral p-i-n photodiodes at λ=488nm. A 50-µm long device exhibits a dark current of 178pA at -5V, a responsivity of 0.31 ±0.01A/W, and an external quantum efficiency of ~78%.
Lin, Y. +5 more
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Noise Characteristics in Silicon Photodiodes
Japanese Journal of Applied Physics, 1969Measurements of noise spectral density in the avalanche multiplication region have been made from 1 MHz to 4 GHz for four silicon photodiodes. The noise spectral density has been compared with the existing theories. At low frequencies the microplasma on-off noise, the theory of which has been successfully applied to one diode containing a single ...
Takeo Igo, Kazunori Sato
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Heterogeneously Integrated Photodiodes on Silicon
IEEE Journal of Quantum Electronics, 2015This paper reviews progress in the field of heterogeneously integrated photodiodes with a focus on InP-based high-speed high-power modified uni-traveling carrier photodiodes on silicon-on-insulator waveguides. Discrete, balanced, and photodiode arrays are described.
Andreas Beling, Joe C. Campbell
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Silicon carbide UV photodiodes
IEEE Transactions on Electron Devices, 1993SiC photodiodes were fabricated using 6 H single-crystal wafers. These devices have excellent UV responsivity characteristics and very low dark current even at elevated temperatures. The reproducibility is excellent and the characteristics agree with theoretical calculations for different device designs.
D.M. Brown +9 more
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Journal of Physics E: Scientific Instruments, 1975
A historical outline traces the development from the initial experiments using hybrid technologies to present day integrated arrays in volume production, and to the latest developments. The theory of operation of photodiode arrays is explained, showing how sensitive scanned arrays are made possible by the charge integration technique, and describing ...
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A historical outline traces the development from the initial experiments using hybrid technologies to present day integrated arrays in volume production, and to the latest developments. The theory of operation of photodiode arrays is explained, showing how sensitive scanned arrays are made possible by the charge integration technique, and describing ...
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Laser damage in silicon photodiodes
Optical and Quantum Electronics, 1976Thermal damage of silicon photodiodes exposed to intense optical radiation is investigated. Damage thresholds of Si photodiodes irradiated by 1.06μm laser pulses are reported for values of irradiation time,τ, ranging from 10−8 to 1s. Threshold laser irradiation produces visible microscopic damage and a permanent degradation in photoresponse.
M. Kruer +3 more
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Silicon photodiode as a photosensitive capacitance
Solid-State Electronics, 1977Abstract In this paper the influence of light on the junction capacitance of a silicon photodiode is discussed. The analysis carried out deals with an open-circuited and reverse-biased photodiode. In this analysis the dependence of the photocurrent sensitivity and the differential conductance on an illumination and an applied voltage is included. The
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Photoacoustic Calibration of Silicon Photodiodes
1992We have calibrated silicon photodiodes with P/N and SiO2/P/N structure. Calibration based on the determination of the internal quantum efficiency of the photodiode is described.
E. Halaška, M. Dienstbier, P. Sladky
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