Results 21 to 30 of about 35,929 (259)
Frontiers in Materials, 2015 Integrated optical light source on silicon is one of the key building blocks for optical interconnect technology. Great research efforts have been devoting worldwide to explore various approaches to integrate optical light source onto the silicon ...
Xianshu eLuo +11 more
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Optimization of Electroplating on Silicon Wafer
The Proceedings of The Computational Mechanics Conference, 2000 A new method, combination of a boundary element method and a finite element method, has been developed to simulate the electroplating of a silicon wafer with copper. In this method, the Laplace equation is solved by representing the complicated phenomena near the anode and cathode surface as polarization characteristics (PCs) and using the PCs as ...
AOKI, Shigeru +3 more
openaire +3 more sources
Surface evolution and stability transition of silicon wafer subjected to nano-diamond grinding
AIP Advances, 2017 In order to obtain excellent physical properties and ultrathin devices, thinning technique plays an important role in semiconductor industry with the rapid development of wearable electronic devices.
Shisheng Cai +6 more
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Review on chemical mechanical polishing of silicon wafers
Jin'gangshi yu moliao moju gongcheng, 2020 With the increase of wafer thickness and the decrease of chip thickness, the amount of material removal increases in the process of wafer processing, and the problem of improving the processing efficiency has become one of the research hotspots.
XU Jiahui +3 more
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Infrared Light Absorption Enhancement in Crystalline Silicon Wafer Textured with H2SO4 Solution
UMYU Scientifica Journal, 2023 In recent years, the formation of microstructures on silicon wafer has gained popularity as a concept for increasing photon trapping and light absorption for optoelectronics applications.
Abdurrahman Muhammed +3 more
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Modern Electronic Materials, 2019 Gettering of rapidly diffusing metallic impurities and structural defects in silicon which is the main material for IC fabrication, high-power high-voltage devices and neutron doped silicon has been studied.
Vyacheslav A. Kharchenko
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Tailoring Functional Properties of Ti–Ni–Cu Shape Memory Alloy Thin Films for MEMS Actuators
Advanced Engineering Materials, EarlyView.A comprehensive study of critical parameters required to develop well‐performing Ti–Ni–Cu thin film shape memory alloy microactuators is provided. Materials science and device integration aspects are integrated by addressing structural and physical relationships using complementary characterization techniques as well as a practical fabrication solution
Elaheh Akbarnejad +6 more
wiley +1 more source
Double‐sided transistor device processability of carrierless ultrathin silicon wafers
InfoMat, 2020 Double‐sided metal‐oxide‐semiconductor field‐effect‐transistor processing is demonstrated for the first time on an ultrathin crystalline silicon substrate of 6‐20 μm in a 100 mm diameter wafer format without a carrier wafer, the thinnest free‐standing ...
Ruby A. Lai +3 more
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Multilayer Self‐Limiting Electrospray Deposition via Stepped Voltage Bias
Advanced Engineering Materials, EarlyView.Self‐limiting electrospray deposition (SLED) uses a high voltage to generate and deposit a charged payload on a target surface. The coating retains its charge, repelling newly arriving material. SLED thickness can be decreased by applying a secondary bias to the target.
Madhuri Deb +3 more
wiley +1 more source
Advanced Engineering Materials, EarlyView.Deep‐UV (258 nm) femtosecond pulses enable uniform amorphous silicon writing on Si(100)/(111) with a six‐fold larger fluence amorphization window than NIR methods. Optimized fluence and overlap yield 20–45 nm uniform and continuous amorphous layers. Microscopy shows sharp interfaces, and real‐time reflectivity reveals nanosecond melt–resolidification ...
Wissal Benali +5 more
wiley +1 more source