Results 21 to 30 of about 54,444 (308)

Electrophoretic Deposited Quartz Powder-Assisted Growth of Multicrystalline Silicon

open access: yesCrystals, 2022
Ingot multicrystalline silicon (Mc-Si) needs to be improved in quality and reduced in cost compared with Czochralski monocrystalline silicon. A uniform and dense quartz nucleation layer was obtained by the electrophoretic deposition of quartz powder on ...
Xiang Quan   +3 more
doaj   +1 more source

3D characterisation of tool wear whilst diamond turning silicon [PDF]

open access: yes, 2006
Nanometrically smooth infrared silicon optics can be manufactured by the diamond turning process. Due to its relatively low density, silicon is an ideal optical material for weight sensitive infrared (IR) applications. However, rapid diamond tool edge
Luo, X.   +5 more
core   +1 more source

A Study of Ammonium Bifluoride as an Agent for Cleaning Silicon Contamination in the Wafer Dicing Process

open access: yesApplied Sciences, 2023
A new cleaning agent for silicon contamination in the wafer dicing process was formulated in this research. Ammonium bifluoride was introduced as the main ingredient in the formula, and MSA and sulfuric acid were added as the solvent and buffer solution ...
Teh-Hua Tsai, Chen-Yu Wang
doaj   +1 more source

Wafer-level vacuum sealing for packaging of silicon photonic MEMS [PDF]

open access: yes, 2021
Silicon (Si) photonic micro-electro-mechanical systems (MEMS), with its low-power phase shifters and tunable couplers, is emerging as a promising technology for large-scale reconfigurable photonics with potential applications for example in photonic ...
Jo, Gaehun,   +30 more
core   +1 more source

Porous silicon nanowire arrays fabrication through one-step metal-assisted chemical etching

open access: yes工程科学学报, 2019
One-step metal-assisted chemical etching (MACE) was used to fabricate porous silicon nanowire arrays. Also, the effects of doping level, AgNO3 concentration, and HF concentration on the morphology and structure of porous silicon nanowire were ...
HE Zu-dong   +6 more
doaj   +1 more source

Tuning of a superconducting microwave resonator at 77 K using an integrated micromachined silicon vertical actuator [PDF]

open access: yes, 2010
A silicon micromachined actuator is used to tune a high temperature superconducting microwave resonator. The superconducting resonator is only 1.24 mm x 0.66 mm and demonstrates a Q of up to 1078 at 6.3 GHz and at 77 K.
Y Wang   +14 more
core   +1 more source

High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

open access: yesFrontiers in Materials, 2015
Integrated optical light source on silicon is one of the key building blocks for optical interconnect technology. Great research efforts have been devoting worldwide to explore various approaches to integrate optical light source onto the silicon ...
Xianshu eLuo   +11 more
doaj   +1 more source

Infrared Light Absorption Enhancement in Crystalline Silicon Wafer Textured with H2SO4 Solution

open access: yesUMYU Scientifica Journal, 2023
In recent years, the formation of microstructures on silicon wafer has gained popularity as a concept for increasing photon trapping and light absorption for optoelectronics applications.
Abdurrahman Muhammed   +3 more
doaj   +1 more source

Development of residual stress in sol-gel derived Pb(Zr,Ti)O3 films: An experimental study [PDF]

open access: yes, 2008
Residual stresses develop in the sol-gel-derived ferroelectric thin films during the transformation of the metalorganic gel to the metal oxide upon thermal treatment and due to the thermal and elastic mismatch between the Pb(Zrx,Ti1-x)O3 (PZT) film and ...
Zhang, Qi   +7 more
core   +1 more source

Surface evolution and stability transition of silicon wafer subjected to nano-diamond grinding

open access: yesAIP Advances, 2017
In order to obtain excellent physical properties and ultrathin devices, thinning technique plays an important role in semiconductor industry with the rapid development of wearable electronic devices.
Shisheng Cai   +6 more
doaj   +1 more source

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