Results 41 to 50 of about 54,444 (308)
Temporary wafer bonding by polyelectrolyte interlayers
S.179-186Polyelectrolyte multilayers of just a few nanometers thickness were used for direct bonding of silicon, thermally oxidized silicon, and borosilicate wafers, respectively, and the bonded wafer pairs were characterized during and after annealing ...
Klages, C.-P. +4 more
core +1 more source
Near‐Field Electrospinning Micro‐Printhead Achieves Precise Control of Nanofiber Deposition
A micro‐printhead for near‐field electrospinning enables reproducible deposition of polymer nanofibers with diameters below 50 nm. Systematic parameter studies uncover the mechanisms linking operating conditions to fiber morphology, paving the way for precise and low‐cost nanoscale 3D manufacturing.As a high‐resolution, cost‐effective, and rapid ...
Han Xu, Dario Mager, Jan G. Korvink
wiley +1 more source
Karl Popper and the Mechanisms of Hydrogen Embrittlement
Representation of the beginning of loss of ductility rather than embrittlement. Small concentrations of hydrogen in a diffusible form within iron are well‐established to harm the mechanical integrity of steels. There are theories that attempt to explain the pernicious role of hydrogen.
H. K. D. H. Bhadeshia
wiley +1 more source
Vertically Aligned n-Type Silicon Nanowire Array as a Free-Standing Anode for Lithium-Ion Batteries
Due to its high theoretical specific capacity, a silicon anode is one of the candidates for realizing high energy density lithium-ion batteries (LIBs).
Andika Pandu Nugroho +9 more
doaj +1 more source
A Review of Hydrophilic Silicon Wafer Bonding [PDF]
Hydrophilically activated direct wafer bonding is a technique for gluelessly attaching oxide-coated wafers together. This ability is a vital step in the construction of many microelectronic and microelectromechanical (MEMS) devices. In particular this technique is widely used in the production of 3d interconnected devices due to the lack of interlayer.
Masteika, V. +3 more
openaire +1 more source
ICP Etching of Silicon for Micro and Nanoscale Devices [PDF]
The physical structuring of silicon is one of the cornerstones of modern microelectronics and integrated circuits. Typical structuring of silicon requires generating a plasma to chemically or physically etch silicon.
Henry, Michael David
core +1 more source
Tailoring Functional Properties of Ti–Ni–Cu Shape Memory Alloy Thin Films for MEMS Actuators
A comprehensive study of critical parameters required to develop well‐performing Ti–Ni–Cu thin film shape memory alloy microactuators is provided. Materials science and device integration aspects are integrated by addressing structural and physical relationships using complementary characterization techniques as well as a practical fabrication solution
Elaheh Akbarnejad +6 more
wiley +1 more source
The effect of the chuck shape on the wafer topography in back grinding of wafer with outer rim
Back Grinding of Wafer with Outer Rim (BGWOR) is a novel method for carrier-less thinning of silicon wafers. Silicon wafers are widely used in integrated circuits (ICs).
Xianglong Zhu +4 more
doaj +1 more source
Prototype MEMS Capacitive Pressure Sensor Design and Manufacturing. [PDF]
This paper is intended to describe the design and manufacturing aspects of a simple micromachined capacitive pressure sensor working in the pressure range of 0-1000 mbar. 500 µm thick Borofloat® 33 glass and silicon wafers were used as substrates.
Kulinyi, Sándor +3 more
core +1 more source
Nondestructive Testing of Welded Composite Metal Foams
X‐ray computed tomography (CT) is used to evaluate welded steel–steel composite metal foam (CMF) joints of two density classes. It reports variation in postweld spatial void distribution and correlates it to weld‐induced changes, mechanical performance, and failure within welded CMF panels.
Chinmaya Prerana Inguva +2 more
wiley +1 more source

