Results 121 to 130 of about 11,947,015 (317)

CEACAM1 participation in breast cancer progression

open access: yesMolecular Oncology, EarlyView.
In invasive breast cancer (BC), CEACAM1 shifts from an apical to a uniform membranous/cytoplasmic pattern, or is lost, as tumors dedifferentiate, inversely tracking the Ki‐67 proliferative index. In MCF‐7 cells, only CEACAM1‐4L suppresses proliferation, repressing cell cycle and growth factor genes.
Mykola Lyndin   +3 more
wiley   +1 more source

Analysis of Single Event Transient in SOI GaN-Based FinFET Due to Heavy-Ion Irradiation

open access: yesIEEE Access
GaN devices offer unrivaled efficiency, high-frequency performance, and superior radiation tolerance over traditional silicon technologies, making them well-suited for space applications.
P. S. Rajakumar, S. Satheesh Kumar
doaj   +1 more source

Pharmacological chromatin remodeling enhances response to estrogen therapy in ER+ breast cancer

open access: yesMolecular Oncology, EarlyView.
Estrogen therapy elicits clinical benefit in ~ 30% of patients with endocrine‐resistant estrogen receptor (ER)‐positive breast cancer. Based on findings that ER transcriptional activation underlies response to estrogen therapy, we tested the effects of epigenetic dysregulation via pharmacological inhibition of histone deacetylases (HDACi).
Anneka L. Johnson Thomas   +16 more
wiley   +1 more source

PANoptosis in the pathogenesis of myelodysplastic syndromes

open access: yesMolecular Oncology, EarlyView.
PANoptosis, a combination of three types of programmed cell death, is mediated by a large protein complex called a PANoptosome. In healthy bone marrow hematopoietic cells, PANoptosis is restricted by inhibitory signaling. In MDS, bone marrow cells become sensitive to the PANoptotic stimuli due to the aberrant inactivation of inhibitory signaling or ...
Rohit Thalla   +4 more
wiley   +1 more source

Analysis of Single-Event Transient in Tunneling-Based Ternary CMOS With Gate-All-Around Structure

open access: yesIEEE Access
In this study, single-event transient (SET) characteristics in tunneling-based ternary complementary MOS device (T-CMOS) with gate-all-around structure (i.e., nanosheet FET) were analyzed for the first time.
Hyeong-Chan Son, Hyunwoo Kim
doaj   +1 more source

Effective Mitigation of Radiation-induced Single Event Transient on Flash-based FPGAs

open access: yes, 2017
Due to the decreasing feature sizes of VLSI circuits, radiation induced Single Event Transients (SETs) are increasingly dominating the event ratio on modern VLSI devices. In particular, Flash-based FPGAs are characterized by the main concern of radiation-
Merodio Codinachs, David   +9 more
core   +1 more source

Intrapatient tumour heterogeneity and clonal evolution in an autopsy study of metastatic salivary gland cancer

open access: yesMolecular Oncology, EarlyView.
Tumour heterogeneity and clonal evolution of metastatic salivary gland cancer were evaluated in two patients with adenoid carcinoma and one patient with myoepithelial carcinoma. Radiology‐guided autopsy enabled multi‐region sampling (total samples n = 149), followed by whole‐genome sequencing and phylogenetic reconstruction (17 tumour samples, 4–7 per ...
Gerben Lassche   +10 more
wiley   +1 more source

Somatostatin receptor 4 (SSTR4) is a tumor suppressor in cutaneous and head & neck squamous cell carcinomas

open access: yesMolecular Oncology, EarlyView.
This study identifies somatostatin receptor 4 (Sstr4) as a critical tumor suppressor against skin and head/neck cancers (HNSCC, cSCC, and BCC). The loss of Sstr4 removes a check on cell growth, causing hyperactivation of the MAPK‐ERK signaling pathway (↑).
Ali Taqvi   +6 more
wiley   +1 more source

Study on Single-event Gate Rupture Mechanism of Asymmetric-trench SiC MOSFET

open access: yesYuanzineng kexue jishu
The demand for kilovolt-level radiation-hardened SiC devices in modern spacecraft is urgent. To provide a theoretical basis for the hardening design of SiC MOSFETs against single-event gate rupture (SEGR), a study on the single-event effects of 1 200 V ...
WANG Lihao1, 2, DONG Tao2, FANG Xingyu2, QI Xiaowei2, WANG Liang2, CHEN Miao2, ZHANG Xing1, ZHAO Yuanfu2
doaj   +1 more source

Supply Voltage and Temperature Dependence of Single-Event Transient in 28-nm FDSOI MOSFETs

open access: yes, 2019
Based on three-dimensional (3D) technology computer aided design (TCAD) simulations, the supply voltage and temperature dependence of single-event transient (SET) pulse width in 28-nm fully-depleted silicon-on-insulator (FDSOI) metal-oxide-semiconductor ...
Yaqing Chi   +4 more
core   +1 more source

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