Results 111 to 120 of about 211,225 (152)

Single Event Upset cross sections at various data rates

IEEE Transactions on Nuclear Science, 1996
We present data which show that Single Event Upset (SEU) cross section varies linearly with frequency for most devices tested. We show that the SEU cross section can increase dramatically away from a linear relationship when the test setup is not optimized, or when testing near the maximum operating frequency.
Stephen Büchner, R A Reed, M A Carts
exaly   +2 more sources

A calculation method to estimate single event upset cross section

Microelectronics Reliability, 2017
We calculate single event effect cross-section with a new general method based on the evaluation of the current collected by an electrode and the ability of the cell to dissipate the charge involved in the event. Basically, a part of the charge deposited by an ionizing particle is collected, and a part of this latest is dissipated during the transient.
F Saigne, L Dilillo, J Boch
exaly   +2 more sources

Estimating Single-Event Logic Cross Sections in Advanced Technologies

IEEE Transactions on Nuclear Science, 2017
Reliable estimation of logic single-event upset (SEU) cross section is becoming increasingly important for predicting the overall soft error rate. As technology scales and single-event transient (SET) pulse widths shrink to widths on the order of the setup-and-hold time of flip-flops, the probability of latching an SET as an SEU must be reevaluated. In
Yanran Chen, Thomas Loveless, Jeffrey Maharrey   +2 more
exaly   +2 more sources

Analysis of Bulk FinFET Structural Effects on Single-Event Cross Sections

IEEE Transactions on Nuclear Science, 2017
A set of upset criteria based on circuit characteristic switching time frame is developed and used to bridge transistor-level TCAD simulations to circuit-level single-event (SE) upset cross sections for advanced (fast and small) digital circuits. Interpretation of the measured and 3D TCAD simulated single-event upset (SEU) responses of bulk planar ...
Lloyd Massengill, Robert Reed, Bharat Bhuva   +2 more
exaly   +2 more sources

Modification of single event upset cross section of an SRAM at high frequencies

IEEE Transactions on Nuclear Science, 1996
Single event upset cross sections exhibit a clock frequency dependence, the origins of which have been investigated in a CMOS SRAM, both with a pulsed laser synchronized to the operation of the circuit and with a circuit simulator modeling program.
Stephen Büchner, A B Campbell, D Mcmorrow   +2 more
exaly   +2 more sources

First Nondestructive Measurements of Power MOSFET Single Event Burnout Cross Sections

IEEE Transactions on Nuclear Science, 1987
A new technique to nondestructively measure single event burnout cross sections for N-channel power MOSFETs is presented. Previous measurements of power MOSFET burnout susceptibility have been destructive and thus not conducive to providing statistically meaningful burnout probabilities.
Dennis L. Oberg, Jerry L. Wert
exaly   +2 more sources

Measurement of a cross-section for single-event gate rupture in power MOSFETs

IEEE Electron Device Letters, 1996
The heavy-ion fluence required to induce Single-Event Gate Rupture (SEGR) in power MOSFETs is measured as a function of the drain bias, V/sub DS/, and as a function of the gate bias, V/sub GS/. These experiments reveal the abrupt nature of the SEGR-voltage threshold.
P Calvel, M Allenspach, J L Titus
exaly   +2 more sources