Results 131 to 140 of about 211,225 (152)
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Laser cross section measurement for the evaluation of single-event effects in integrated circuits
Microelectronics Reliability, 2000Abstract The cross section of ICs extracted from particles accelerator testing is extended to the pulsed laser testing. The extraction methodology attached to this new parameter is presented. It provides a new tool for integrated circuits reliability quantification, illustrated in the case of SEU sensitivity evaluation of a single SRAM cell.
V. Pouget +5 more
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Further development of the Heavy Ion Cross section for single event UPset: model (HICUP)
IEEE Transactions on Nuclear Science, 1995HICUP models the angular dependent heavy ion upset cross section. It pulls together many of the parameters and concepts used to characterize the Single Event Upset (SEU) phenomena, unifying them in a single cohesive model. HICUP is based on a Rectangular Parallelepiped (RPP) geometry for the sensitive volume and the Weibull density function for the ...
L.W. Connell, F.W. Sexton, A.K. Prinja
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Monte Carlo calculation of the cross-section of single event upset induced by 14MeV neutrons
Radiation Measurements, 2005Abstract High-density static random access memory may experience single event upsets (SEU) in neutron environments. We present a new method to calculate the SEU cross-section. Our method is based on explicit generation and transport of the secondary reaction products and detailed accounting for energy loss by ionization.
H. Li, J.Y. Deng, D.M. Chang
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Chinese Physics B, 2023
To predict the soft error rate for applications, it is essential to study the energy dependence of the single-event-upset (SEU) cross-section. In this work, we present a direct measurement of the SEU cross-section with the Back-n white neutron source at the China Spallation Neutron Source.
Biao Pei +4 more
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To predict the soft error rate for applications, it is essential to study the energy dependence of the single-event-upset (SEU) cross-section. In this work, we present a direct measurement of the SEU cross-section with the Back-n white neutron source at the China Spallation Neutron Source.
Biao Pei +4 more
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Parametric Variability Affecting 45 nm SOI SRAM Single Event Upset Cross-Sections
IEEE Transactions on Nuclear Science, 2010SEU simulation analyses of a commercial 45 nm CMOS SOI SRAM cell compared to test data highlight the need to better understand and account for variation in inter-cell hardness, and uncertainty in energy deposition in small sensitive volumes. Simulations indicate that operating voltage and body resistance have the largest impact on simulated cell ...
Thomas Daniel Loveless +4 more
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A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs
IEEE Transactions on Nuclear Science, 1996The single-event-gate-rupture cross-section is measured as a function of drain-source and gate-source bias for some n-channel power MOSFETs. The experimental techniques are explained, and the results are interpreted with the help of two-dimensional computer modeling.
G.H. Johnson +6 more
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IEEE Transactions on Nuclear Science, 1989
The authors report on improved methodologies of predicting upset rates of sensitive devices for neutron energies less than 20 MeV and between 20 and 50 MeV in silicon and apply these to predicting the neutron-induced single-event upset (NSEU) in the atmosphere for one of the most SEU-sensitive LSI bipolar RAMs (93L422).
E. Normand, W.R. Doherty
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The authors report on improved methodologies of predicting upset rates of sensitive devices for neutron energies less than 20 MeV and between 20 and 50 MeV in silicon and apply these to predicting the neutron-induced single-event upset (NSEU) in the atmosphere for one of the most SEU-sensitive LSI bipolar RAMs (93L422).
E. Normand, W.R. Doherty
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High LET Single Event Upset Cross Sections For Bulk and SOI CMOS SRAMs
AIP Conference Proceedings, 2003Electronics in spacecraft and satellites are exposed to high‐energy cosmic radiation. In addition, terrestrial radiation can also affect earth‐based electronics. To study the effects of radiation upon integrated circuits and to insure the reliability of electronic devices, cosmic and terrestrial radiations are simulated with ion beams from particle ...
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2019 IEEE International Reliability Physics Symposium (IRPS), 2019
An accurate device-level simulation method to estimate cross sections (CS) of single event upsets for a standard latch is proposed. CS from the proposed method is compared with experimental results by heavy ions on a fabricated chip in a 65 nm FDSOI.
Kentaro Kojima +3 more
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An accurate device-level simulation method to estimate cross sections (CS) of single event upsets for a standard latch is proposed. CS from the proposed method is compared with experimental results by heavy ions on a fabricated chip in a 65 nm FDSOI.
Kentaro Kojima +3 more
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Radiation Measurements, 2015
Abstract The heavy ions are the main cause to produce single event upset (SEU) damage on electronic devices since they are high LET radiations. The dimension of electronic components in new technology, arise a challenge in radiation effect estimations.
S. Boorboor, S.A.H. Feghhi, H. Jafari
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Abstract The heavy ions are the main cause to produce single event upset (SEU) damage on electronic devices since they are high LET radiations. The dimension of electronic components in new technology, arise a challenge in radiation effect estimations.
S. Boorboor, S.A.H. Feghhi, H. Jafari
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