Results 121 to 130 of about 211,225 (152)
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Angled flip-flop single-event cross sections for submicron bulk CMOS technologies
2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2013Experimental angled heavy-ion single-event cross sections for hardened and unhardened flip-flops for technology nodes ranging from 28-nm to 130-nm are compared. Results show that hardened flip-flop cross sections increase at a faster rate with increasing angle of incidence than unhardened designs as technology scales.
M Bounasser, K Lilja, W T Holman
exaly +2 more sources
Technology Scaling Comparison of Flip-Flop Heavy-Ion Single-Event Upset Cross Sections
IEEE Transactions on Nuclear Science, 2013Heavy-ion experimental results from flip-flops in 180-nm to 28-nm bulk technologies are used to quantify single-event upset trends. The results show that as technologies scale, D flip-flop single-event upset cross sections decrease while redundant storage node flip-flops cross sections may stay the same or increase depending on the layout spacing of ...
Arthur Witulski +2 more
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Semi-Empirical Method for Estimation of Single-Event Upset Cross-Section for SRAM DICE Cells
IEEE Transactions on Nuclear Science, 2015We propose a new semi-empirical method for estimation of Single Event Upset (SEU) cross section for SRAM Dual Interlocked Cells (DICE) with known distance between neighboring sensitive volumes. The method is based on experimental analysis of SEU maps in sub-100 nm 6T SRAM along with layout considerations and SPICE simulations.
Maxim Gorbunov
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Use of new ENDF/B-VI proton and neutron cross sections for single event upset calculations
IEEE Transactions on Nuclear Science, 1999Single-event upsets (SEU) in microelectronics are calculated from newly-developed silicon nuclear reaction recoil data for incident protons and neutrons with energies up to 150 MeV. This paper focusses on the nuclear reaction physics that is important for calculating recoil spectra, and burst generation rate spectra.
E Normand, M B Chadwick
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Effects of data rate and transistor size on single event upset cross-sections for InP-based circuits
IEEE Transactions on Nuclear Science, 2005We present results from SEU testing of two limiter-amplifier ASICs. The circuits are electrically identical except that they are fabricated using different generations InP-based HBT technology. Cross sections measured at clock speeds of 6.4 and 12.8 GHz show technology dependence, and are analyzed to determine charge collection dynamics.
D.L. Hansen, P. Chu, S.F. Meyer
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Modeling Logic Error Single-Event Cross Sections at the 7-nm Bulk FinFET Technology Node
IEEE Transactions on Nuclear Science, 2022Bharat Bhuva +2 more
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Single-Event Upset Cross-Section Trends for D-FFs at the 5- and 7-nm Bulk FinFET Technology Nodes
IEEE Transactions on Nuclear Science, 2023Bharat Bhuva +2 more
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Research on single event upset cross-section of DICE SRAM
2017 Prognostics and System Health Management Conference (PHM-Harbin), 2017In radiation hardened SRAMs and flip-flops, DICE (Dual Interlocked Cell) design is commonly used. DICE is supposed not to flip under normally incident heavy ion beams. But tests show a non-zero SEU cross-section of SICE SRAM. The paper presents a quantitative analysis of the phenomenon.
Zhu Ming +7 more
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Measurement of the single event upset cross-section in the SVX IIe chip
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2003Abstract The Single Event Effect cross-section for the SVX IIe readout chip has been measured using 63.3 MeV protons from the UC Davis cyclotron. The expected rate of Single Event Upsets in the DO Silicon Microstrip Tracker, which uses the SVX IIe chip, is low enough for stable running. No Single Event Latchups were recorded.
A. Juste +2 more
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Predictions of Proton Cross-Section and Sensitive Thickness for Analog Single-Event Transients
IEEE Transactions on Nuclear Science, 2016In linear devices, the strong impact of configuration on the SET characterization makes them very difficult to predict without using particle accelerators for each application. In this work, based on heavy ion data, we propose to simulate proton cross-sections using gateway tools such as SIMPA, PROFIT or the more recent METIS software we developed ...
Cecile Weulersse +4 more
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