Results 71 to 80 of about 12,854,075 (243)

Microsemi RTG4 Rev C Field Programmable Gate Array Single Event Effects (SEE) Heavy-Ion Test Report [PDF]

open access: yes, 2019
The goal of this study was to perform an independent investigation of single event destructive and transient susceptibility of the Microsemi RTG4 device. The devices under test were the Microsemi RTG4 field programmable gate array (FPGA) Rev C.
Seidleck, Christina   +6 more
core  

Invisible but not inaccessible—Revealing transient oligomers formed by intrinsically disordered proteins with solution NMR and complementary methods

open access: yesFEBS Letters, EarlyView.
Transient oligomers formed by intrinsically disordered proteins may be ‘invisible’ to direct detection yet remain accessible to solution NMR through equilibrium‐exchange measurements and pressure‐jump experiments. Complementary methods report on mass, stoichiometry, selected distance distributions, morphology, and internal packing.
Martin D. Gelenter, Ad Bax
wiley   +1 more source

Single event transient reliability analysis on a fault-tolerant RISC-V microprocessor design

open access: yes
The miniaturization of electronic devices and the improved operating speeds increase the likelihood of single event faults. Differently from Single Event Upset (SEU) faults, Single Event Transient (SET) faults generally affect combinational logic, making
Mastrandrea, Antonio   +6 more
core   +1 more source

Position dependent measurement of single event transient voltage pulse shapes under heavy ion irradiation

open access: yes, 2012
A CMOS inverter in 90 nm CMOS bulk technology was exposed to heavy ion radiation (Au-197) at a micro-beam facility. The targeted inverter occupies an area of 6×3 µm².
Zimmermann, Horst   +5 more
core   +1 more source

Inhibition of dipeptidyl peptidase 7 impairs lysophagy in LLOMe‐treated HepG2 cells

open access: yesFEBS Letters, EarlyView.
DPP7 inhibition delays ubiquitin‐dependent lysophagy by attenuating ubiquitin accumulation and the recruitment of SQSTM1 and LC3 to damaged lysosomes, resulting in delayed clearance of damaged lysosomes and impaired restoration of lysosomal homeostasis. Created using FigureLabs (Certificate ID: FL‐PUB‐20260922‐Z99XNX).
Na Yeon Park   +8 more
wiley   +1 more source

Improvement of single event transients effect for a novel AlGaN/GaN HEMT with enhanced breakdown voltage

open access: yesJournal of Science: Advanced Materials and Devices
A novel AlGaN/GaN HEMT is proposed to improve its single event transient (SET) effect and breakdown characteristics. The device features an AlGaN back barrier layer and a buried P-GaN island in the back barrier layer (BP-HEMT).
Shuxiang Sun   +5 more
doaj   +1 more source

Analyzing Radiation-Induced Transient Errors on SRAM-Based FPGAs by Propagation of Broadening Effect

open access: yesIEEE Access, 2019
SRAM-based field programmable gate arrays (FPGAs) are widely used in mission-critical applications, such as aerospace and avionics. Due to the increasing working frequency and technology scaling of ultra-nanometer technology, single event transients ...
Corrado De Sio   +3 more
doaj   +1 more source

Soft motions encoded by the fold and mediated by conserved hinge sites drive V‐ATPase allosteric machinery and autoinhibition

open access: yesFEBS Letters, EarlyView.
Vacuolar H+‐ATPase (V‐ATPase) is a multisubunit rotary proton pump that acidifies intracellular compartments. Using elastic network models, we identified conserved hinge residues that govern its large‐scale functional motions. We show that intrinsically encoded ‘soft modes’ drive critical functional transitions, including rotary catalysis and ...
Diksha Parwana   +3 more
wiley   +1 more source

Single-event Transient (SET) effects on 60nm and 32nm 3T CMOS active pixel sensor

open access: yes, 2016
Nowadays, CMOS Active Pixel Sensors (APS) are widely used especially in space mission. However, the space consists of various kind of radiation. Single-Event Transient (SET) is one of the concern for the circuits in the radiation environment.
Ibrahim, Siti Noorjannah   +2 more
core  

Single event transient effects in raised source/drain double-gate 1-T DRAM

open access: yes
Single event transient (SET) due to heavy ion strike is a major reliability concern in digital VLSI circuits. In this paper, the SET effects in a capacitorless 1-T DRAM with raised source/drain double-gate MOSFET are analyzed.
Asenov, Asen, Aneesh, Y. M., Bindu, B.
core   +1 more source

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