Results 171 to 180 of about 260 (218)

On single event upset error manifestation

1994
This paper addresses the problem of how faults in a radiation environment primarily manifest as errors in a complex device. Previous work in the area has focused on modelling the latching of transients. In this paper this modelling task is extended to the phenomenon of double soft errors. The first error manifestation of a single event upset (SEU) in a
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Single Event Upset Practice

1997
This chapter and Chapter 5 include a reprise of the discussion in the earlier chapters pertinent to these sections, and together with Chapter 5 present guidelines for use in practical applications. Besides understanding the basic tenets of the discipline of single event phenomena (SEP), it is felt important for the reader that they be transformed into ...
George C. Messenger, Milton S. Ash
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Single event upset rates in space

IEEE Transactions on Nuclear Science, 1992
SEUs (single event upsets) in the CRRES (Combined Release and Radiation Effects Satellite) MEP (Microelectronic Package Space Experiment) showed a dramatic increase during a solar flare, the influence of the flare varied widely among device types, and a GaAs RAM (random access memory) showed a different response to the proton belts than some 51 RAMs ...
A. Campbell, P. McDonald, K. Ray
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Mechanisms Leading to Single Event Upset

IEEE Transactions on Nuclear Science, 1986
SRAM cell recovery time following a 140 MeV Krypton strike on a Sandia SRAM is modelled using a two-dimensional transient numerical simulator and circuit code. Strikes at both n- and p-channel "off" drains are investigated. Four principle results are obtained.
C. L. Axness, H. T. Weaver, J. S. Fu, R. Koga, W. A. Kolasinski   +4 more
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Anomalies due to single event upsets

28th Aerospace Sciences Meeting, 1990
The description of single event upsets (SEUs) in the spacecraft Anomalies Handbook is reviewed. The basic mechanism involved in SEUs is summarized and discussed in terms of circuit analysis. Calculation of SEU rate is analytically described and discussed. Departures from single step function dependence in the SEU rate is addressed.
P. Robinson, W. Lee, R. Aguero, S. Gabriel   +3 more
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Laser Simulation of Single Event Upsets

IEEE Transactions on Nuclear Science, 1987
A pulsed picosecond laser was used to produce upsets in both a commercial bipolar logic circuit and a specially designed CMOS SRAM test structure. Comparing the laser energy necessary for producing upsets in transistors that have different upset sensitivities with the single event upset (SEU) level predicted from circuit analysis showed that a ...
S. P. Buchner, D. Wilson, K. Kang, D. Gill, J. A. Mazer, W. D. Raburn, A. B. Campbell, A. R. Knudson   +7 more
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Single-event upset effects in optocouplers

IEEE Transactions on Nuclear Science, 1998
Single-event upset is investigated for optocouplers using heavy ions. The threshold LET for optocouplers with internal high-gain amplifiers is very low, causing output transients to occur even when the optocouplers are irradiated with short-range alpha particles.
A.H. Johnston, G.M. Swift, T. Miyahira, S. Guertin, L.D. Edmonds   +4 more
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Single Event Upsets correlated with environment

IEEE Transactions on Nuclear Science, 1994
Single Event Upset rates on satellites in different Earth orbits are correlated with solar protons and geomagnetic activity and also with the NASA AP8 proton model to extract information about satellite anomalies caused by the space environment. An extensive discussion of the SEU data base from the TOMS solid state recorder and an algorithm for ...
A.L. Vampola, M. Lauriente, D.C. Wilkinson, J. Allen, F. Albin   +4 more
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Single-event upset in flash memories

IEEE Transactions on Nuclear Science, 1997
Single-event upset was investigated in high-density flash memories from two different manufacturers. Many types of functional abnormalities can be introduced in these devices by heavy-ions because of their complex internal architecture. Changes in the stored memory contents sometimes occurred, even when devices were irradiated in a read mode with the ...
H.R. Schwartz, D.K. Nichols, A.H. Johnston   +2 more
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Formal Methods for Modelling and Analysis of Single-Event Upsets

2015 IEEE International Conference on Information Reuse and Integration, 2015
When a high-energy particle such as a proton strikes a CPU, the impact may result in the corruption of a data register on the CPU. Such a single-event upset (SEU), in which a random bit is flipped in the content of a data register, can lead to critical errors in the execution of a program.
René Rydhof Hansen, Kim Guldstrand Larsen, Mads Chr. Olesen, Erik Ramsgaard Wognsen   +3 more
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